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研究生:林松禾
研究生(外文):Song-he Lin
論文名稱:以不同氮源先驅物氣相磊晶氮化鋁薄膜之研究
論文名稱(外文):Gas phase epitaxy of AlN using various nitrogen precursors
指導教授:洪儒生洪儒生引用關係
指導教授(外文):Lu-sheng Hong
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:化學工程系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:118
中文關鍵詞:氮化鋁化學氣相沈積法三乙基胺•鋁烷
外文關鍵詞:AlNCVDtriethylamine alane
相關次數:
  • 被引用被引用:1
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  • 下載下載:34
  • 收藏至我的研究室書目清單書目收藏:0
本篇論文乃以不同氮源先驅物為原料的冷壁式低壓化學氣相沈積法,探討在不同基材上異質成長氮化鋁薄膜的相關議題。首先,單一分子先驅物三乙基胺•鋁烷(TEAA)的長膜在500oC的高溫下,會成長出以碳化鋁(Al2C)為主體的非晶向薄膜,其次以第三丁基聯胺與三甲基鋁(TBHy/TMAl)反應系統選用藍寶石晶片(sapphire)作為基材,在成長溫度為700oC、總壓3 torr、五三族元素進料比為6.2下成長出氮化鋁膜;最後在氨氣與三甲基鋁(NH3/TMAl)反應系統中則選用經過表面碳化處理的矽(111)晶片作為基材,實驗結果發現在總壓10 torr、五三族元素進料比為2500下,基材溫度為1100 oC時,成長出以(0002)為擇優方向的氮化鋁(AlN)薄膜。
Aluminum nitride (AlN) films were grown by a low pressure chemical vapor deposition (LPCVD) method. Many combination of reactants and substrates have been studied. Firstly, a single molecular precursor named triethylamine alane was used that formed aluminum carbide with only a small amount of Al-N bonding at 973 K. Secondly, TMAl/TBHy reaction system show polycrystalline growth of AlN at a low temperature of 973 K. Finally, AlN(0002) films were successfully synthesized on SiC(111) at 1373 K by using TMAl/NH3 reaction system with a large V/III feeding ratio of 2500.
中文摘要.............................................I
英文摘要............................................II
誌謝...............................................III
目錄.................................................V
圖索引.............................................VII
表索引.............................................XVI


第一章 前言
1.1 導言 ...........................................1
1.2 氮化鋁製備方式 ..................................7
1.3 研究動機與目的..................................10

第二章 實驗相關部份
2.1 實驗裝置........................................11
2.2 沈積用基材的製備方法............................19
2.3 實驗程序........................................23
2.4 薄膜特性的量測 ..................................25


第三章 結果與討論
3.1 在Si(111)上成長碳化矽薄膜品質之研究.............32
3.2 TEAA於CVD系統中的沈積行為
3.2-1 TEAA於不同基材溫度下的沈積行為...........40
3.2-2 TEAA於沈積溫度700oC下的薄膜原子組成之分
析.........................................55
3.3 TBHy/TMAl系統成長AlN薄膜
3.3-1以不同TMAl分壓對AlN薄膜成長的影響.........65
3.3-2 以不同反應溫度及基材氮化時間對AlN薄膜成長的
影響.......................................74
3.4 NH3/TMAl系統成長AlN薄膜
3.4-1以不同V/III進料比對AlN薄膜成長的影響......82
3.4-2 以不同反應溫度對AlN薄膜成長的影響........91
第四章 結論........................................98
參考文獻............................................99
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