1.H. Amano, M. Kito, K. Hiramatsu, I.Akasaki, Inst. Phys. Conf. Ser., 106, 725 (1989).
2.S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys., 30, L1998 (1991).
3.S. Nakamura, G. Fasol, “The Blue Laser Diode”, Springer, Berlin, (1997).
4.M. A. Kahn, Q. Chen, M. S. Shur, B. T. McDermott, J. A. Higgins, IEEE Electron Device Lett., 17,325 (1996)
5.Jipo Huang, Lianwei Wang, Qinwo Shen, Chenglu Lin, Mikael Ostling, journal of electronic materials, 28, 225 (1999).
6.A. Raveh, M. Weiss, M. Pinkas, D.Z. Rosen, G. Kimmel, Surface and Coating Technology, 114, 269 (1999).
7.王宏灼,”反應性射頻濺鍍法成長氮化鋁薄膜之研究”,國立中山大學電機工程研究所,碩士論文(1995)。8.黃靜茹,”在底層電極上以常溫成長氮化鋁薄膜之研究”,國立中山大學材料科學研究所,碩士論文(2000)。9.John B. Blum, “Aluminum Nitride Substrates for Hybrid Microelectronic Application”.
10.Y. Kulokawa, K. Utsumi, H. Takamizaura, I. Kamate, S. Noguchi, IEEE Transaction on components, hybrid, and manufacturing technology, chmt-8, 247 (1985).
11.M. P. Borom, G. A. Slack, J. W. Szymaszek, Ceramic Bulletin, 51, 852 (1972).
12.G. A. Slack, R. A. Tanzill, R. O. Pohl, J. W. Vander Sande, J. Phys. Chem. Solid, 48, 641 (1987).
13.James H. Edgar and W. J. Meng, Properties of Group III Nitrides, (1993).
14.C. Caliendo, G. Saggio, P. Verardi, E. Verona, IEEE Ultrasonics symposium, 249 (1993).
15.王惠明,”以濺射法研製氧化鋅/砷化鎵表面聲波元件”,國立成功大學電機工程研究所,碩士論文(1986)。16.H. C. Lee and J. Y. Lee, journal of Materials Science:Materials in Electronics, 5, 221 (1994).
17.M. Kishi, M. Susuky and K. Ogawa, Jpn. J. Appl. Phys., 31, 1153 (1992).
18.J. H. Edgar, Z. J. Yu and B. S. Sywe, Thin Solid Films, 204, 115 (1991).
19.P. Bhattacharya and D. N. Bose, Jpn. J. Appl. Phys., 30, 1750 (1991).
20.S. Nakamura, M. Senoh, N. Ieasa, T. Yamada, T. Matsushita, Appl. Phys. Lett., 69, 3034 (1996).
21.S. Tomabechi, K. Wada, S. Saigusa, H. Matsuhashi, H. Nakasa, K. Masu and K. Tsubouchi, IEEE, 263 (1999).
22.S. Tomabechi, K. Wada, S. Saigusa, H. Matsuhashi, H. Nakasa, K. Masu and K. Tsubouchi, IEEE, 263 (1999).
23.H. Gong, X. Jiang, Journal of Crystal Growth, 235, 333 (2002).
24.Ju-Won Soh, S. S. Jang, I. S. Jeong and W. J. Lee, Thin Solid Films, 279, 17 (1996).
25.H. D. Schenk, U. Kaiser, G. D. Kipshidze, Material Science and Engineering, 59, 84 (1999).
26.S. Yoshida, S. Misawa, Fujii., S. Takada, H. Hayakawa, S. Gonda, J. Vac. Sci. Technol., 16, 990 (1979).
27.M. Ishihara, S. J. Li, H. Yumoto, K. Akashi, Y. Ide, Thin Solid Film, 316, 152 (1998).
28.A. Jacquot, B. Lenoir, A. Dauscher, P. Verardi, Applied Surface Science, 186, 507 (2002).
29.K. Seki, X. Xu, H. Okabe, J. M. Frye and J. B. Halpern, Appl. Phys. Lett., 60, 2234 (1992).
30.P. Verardi, M. Dinescu, C. Gerardi, L. Mirenghi, V. Sandu, Applied Surface Science, 109/110, 371 (1997).
31.A. F. Belyanin, L. L. Bouilov, V. V. Zhirnov, A. L. Kamenev, K. A. Kovalskij, Diamond and Related Materials, 8, 369 (1999).
32.D. Manova, V. Dimitrova, D. Karpuzov, R. Yankov, Vacuum, 52, 301 (1999).
33.T. P. Drusedau, K. Koppenhagen, Surface and Coating Technology, 153, 155 (2002).
34.H. Okano, Y. Takahashi and T. Tanaka, Jpn. J. Appl. Phys., 31, 3446 (1992).
35.W. J. Meng, J. A. Sell and T. A. Perry, J. Appl. Phys., 75, 3446 (1994).
36.C. C. Cheng, Y. Chen, H. J. Wang and W. R. Chen, Jpn. J. Apply. Phys., 354, 35 (1996).
37.B. Wang, Y. N. Zhao and Z. He, vacuum, 48, 427 (1997).
38.A. Raveh, M. Weiss, M. pinkas, D. Z. Rosen, G. Kimmel, Surface and Coating Technology, 114, 269 (1999).
39.P. Bhattacharya and D. N. Bose, Jpn. J. Appl. Phys., 30, 1750 (1991).
40.T. Detchprohm, K. Hiramatsu, N. Sawaki and I. Akasaki, Journal of Crystal Growth, 137, 171 (1994).
41.Q. Guo, O. Kato and N. Mikoshiba, IEEE Trans. on Sonics and Ultrasonics, SU-32, 634 (1985).
42.H. M. Liaw, R. Doyle, P. L. Fejes, S. Zollner, A. Konkar, K. J. Linthicm, T. Gehrke, R. F. Davis, Solid-State Electronics, 44, 747 (2000).
43.D. C. Boyd, R. T. Haasch, D. R. Mantell, R. K. Schulze, J. F. Evans and W. L. Gladfelter, Chem. Mater., 1, 119 (1989).
44.C. J. Linnen, D. F. Macks and R. D. Coombe, J. Phys. Chem. B, 101, 1602 (1997).
45.L. V. Interrante, W. Lee, M. MaConnell, N. Lewis and E. Hall, J. Electrochem. Soc., 136, 472 (1989).
46.R. K. Schulze, D. C. Boyd, J. F. Evans and W. L. Gladfelter, J. Vac. Sci. Technol.A, 8, 2338 (1990).
47.L. H. Dubois, B. R. Zegarski, C.-T. Kao and R. G. Nuzzo, Surface Science, 236, 77 (1990).
48.W. L. Gladfelter, D. C. Boyd, J. W. Hwang, R. T. Haasch, J. F. Evans, K. L. Ho and K. F. Jensen, Mater. Res. Soc. Symp. Proc., 131, 447 (1989).
49.S. Fujieda, M. Mizuta and Y. Matumoto, Jpn. J. Appl. Phys., 26, 2067 (1987).
50.S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi, R. Ito, S. Fukatsu and Y. shiraki, Journal of Crystal Growth, 124, 439 (1992).
51.Shuichi Nishide, Takashi Yoshimura, Yukichi Takamatsu, Atsushi Ichige, Kangsa Pak, Naoki Ohshima, Hiroo Yonezu, Journal of Crystal Growth, 189/190, 325 (1998).
52.Yu Jen Hsu, Lu Sheng Hong, Jyh Chiang Jiang, Jing Chong Chang, Journal of Crystal Growth, 266, 347 (2004).
53.U. W. Pohl, C. Moller, K. Knorr, W. Richter, J. Gottfriedsen, H. Schumann, K. Rademann, A. Fielicke, Material Science & Engineering B, B59, 20 (1999).
54.胡銘顯,”以矽甲烷/乙炔/氫-化學氣相沉積系統在矽基材上合成碳化矽薄膜之研究”,國立台灣科技大學,碩士論文(2001)。55.汪建民,”材料分析”,民全書局,台北市(87年)。
56.M. E. Gross, C. G. Fleming, K. P. Cheung and L. A. Heimbrook, J. Appl. Phys., 69, 2589 (1991).
57.John A. Dean, “Lange’s Handbook of Chemistry”, McGraw-Hill, 13th, chap. 9, 9-4 (1997)
58.A. V. Lobanova, K. M. Mazaev, R.A. Talalaev, M. Leys, S. Boeykens, K. Cheng, S. Degroote, Journal of Crystal Growth, 287, 601 (2006).