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研究生:魏弘堯
研究生(外文):Hung-yao Wei
論文名稱:在BGA製程中以銦作為UBM層對接點界面形態與機械性質之探討
論文名稱(外文):Study of the Mechanism Properties and Interfacial Reactions as Using Indium Layer for UBM in BGA
指導教授:李嘉平李嘉平引用關係顏怡文
指導教授(外文):Chiapyng LeeYee-wen Yen
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:材料科技研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:182
中文關鍵詞: 球形陣列構裝 底下金屬層
外文關鍵詞:indiumBGAUBM
相關次數:
  • 被引用被引用:6
  • 點閱點閱:457
  • 評分評分:
  • 下載下載:58
  • 收藏至我的研究室書目清單書目收藏:0
因應無鉛化的實行,使的傳統的錫-鉛銲料逐漸被限制,如何降低迴銲的溫度為一重要的課題。因此本研究提出一新的構想,以固液擴散的方式為基礎,以銦作為連接層形成In/Ni/Cu結構的金屬層,利用銦低溶點(157℃)的特性,在高於銦的溶點之上的溫度進行迴銲的動作。研究中以Sn-3.0Ag-0.5Cu和Sn-0.7Cu兩種銲料的760 μm的錫球為主,在160、180及200℃下進行3、4及5分鐘的迴銲,並於100℃下進行100∼500小時的時效。
結果顯示在160、180及200℃的溫度下,兩種銲料皆可以成功的接合。對Sn-3.0Ag-0.5Cu及Sn-0.7Cu而言在160及180℃的迴銲下,界面上形成Cu6Sn5相,大部分為剝離的狀態,而200℃的迴銲下一樣形成Cu6Sn5相但無剝離的情況發生。對於Sn-3.0Ag-0.5Cu組成的錫球,在160℃迴銲後於100℃下時效過後,其在錫球的內部發現AgIn2及Ag2In相共存的情況。Sn-3.0Ag-0.5Cu及Sn-0.7Cu兩種銲料在160℃迴銲後於100℃的時效下皆發現Ni-In-Sn的三元相生成,且其厚度在100小時後即已成長至約7 μm。而在200℃迴銲後經100℃的時效下,Sn-3.0Ag-0.5Cu及Sn-0.7Cu界面上皆僅有Cu6Sn5相的生成,且無呈現剝離的狀態。而Sn-9Zn經迴銲後在界面上並無明顯的觀察到有介金屬相的生成。
對機械性質方面,Sn-3.0Ag-0.5Cu於160℃迴銲後再經100℃下時效,因為三元介金屬相的生成使的推力值大幅度的下降,且從斷裂面上發現,破裂的方式由延性破裂轉變成延性與脆性混合的模式。
For the coming leadfree time, the Sn/37Pb soder, traditional solder, has been limited gradually. How to reduce the reflow-temperature is the most important issue in the leadfree-process. So this study try to use another method, Solid-Liquid Interdiffusion Bonding SLID, to bond solders and metallization layer. In experiment, In/Ni/Cu is used as under metallizatioin layer to react with three solders, Sn-3.0Ag-0.5Cu、Sn-0.7Cu and Sn-9Zn, and the reflow-temperature is chosed at 160℃、180℃ and 200℃which is just higher than the melting temperature of indium, 157℃, for 3 to 5 mins. After reflowing, samples which reflowed at 160℃ and 200℃ are chosed to age at 100℃ for 100 to 500 hours then the intermetallic compounds formd at the interface between solder and metallization layer and in the solder are investigated. And for the Sn-3.0Ag-0.5Cu solder which reflowed at 160℃ and aged at 100℃, mechanism properties are also investigated.
Three solders all can joint with In/Ni/Cu successfully at 160℃、180℃ and 200℃. After reflowing at 160℃ and 180℃,Cu6Sn5 are found and spalled into the solder for Sn-3.0Ag-0.5Cu and Sn-0.7Cu. Instead of spalling, Cu6Sn5 do not spall and have a layed form after reflowing at 200℃. After aging at 100℃, a thicker intermetallic compound appears in not only Sn-3.0Ag-0.5Cu but also Sn-0.7Cu which were reflowed at 160℃. But samples which were reflowed at 200℃ only have Cu6Sn5 even after aging at 100℃. According to EPMA, the thicker intermetallic compound is determined as a ternary phase, Ni(In0.3Sn0.7)2. For Sn-9Zn, no intermetallic compound are found after reflowing at 160℃、180℃ and 200℃ even aging at 100℃.
For mechanism properties, microstructure and failure model are closely related. Strength of samples, Sn-3.0Ag-0.5Cu, which were reflowed at 160℃ and aged at 100℃ decrease largely because of ternary phase formed. And the failure model changes form ductile to mix of ductile and brittle fracture.
中文摘要………………………………………………………………I
英文摘要………………………………………………………………II
誌謝……………………………………………………………………IV
目錄……………………………………………………………………V
圖目錄…………………………………………………………………VII
表目錄 ………………………………………………………………XV
第一章 前言…………………………………………………………1
第二章 理論基礎與文獻回故 ……………………………………3
2.1 電子構裝簡介…………………………………………………3
2.2 銲接……………………………………………………………8
2.3 無鉛銲料的發展 ………………………………………………13
2.4 擴散理論與界面反應…………………………………17
2.5 相關文獻回顧…………………………………………22
2.5.1 錫-鉛/鎳………………………………………22
2.5.2 錫-銀/鎳………………………………………25
2.5.3 錫-銀-銅/鎳……………………………………27
2.5.4 錫-銅/鎳………………………………………30
2.5.5 錫-銦/鎳………………………………………32
2.5.6 錫-鋅/鎳…………………………………………………35
第三章 實驗設備與程序…………………………………………37
3.1 錫球製備…………………………………………………37
3.2 基材製備…………………………………………………40
3.2.1電鍍鎳…………………………………………40
3.2.2 電鍍銦…………………………………………43
3.3 界面反應…………………………………………44
3.4 機械性質…………………………………………47
第四章 結果與討論………………………………………………50
4-1 Sn-3.0Ag-0.5Cu在160℃與200℃下迴銲………50
4-2 Sn-0.7Cu在160℃與200℃下迴銲………………97
4-3反應機制探討……………………………………123
4-4 Ni-In-Sn三元化合物形態………………………135
第五章 結論………………………………………………………142
參考文獻……………………………………………………………144
附錄一………………………………………………………………i
附錄二………………………………………………………………iv
附錄三………………………………………………………………xii
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