臺灣博碩士論文加值系統

我們已經成功利用熱滯留層輔助結晶技術，經由準分子雷射退火後，可以實現全部充滿橫向成長寬度14um長的矽島。然後我們結合全部橫向長晶的矽島和雙閘極的架構去製造高性能的薄膜電晶體。
另外我們成功地開發了一組不須射頻電漿產生器而且也可以達到氫化效果的機台—《熱鎢絲氫化機台》，我們利用最佳的氫化參數對金氧半元件進行氫化，而氫化後的介面態位密度有明顯的降低，而且有更佳的ON/OFF電流比、次臨界擺幅。

We have successfully used heat retaining layer enhanced crystallization technology when excimer laser annealing we can achieve that the fully lateral grain growth silicon island of 14um long. Then we combine the fully lateral grain growth silicon island and dual gate structure to make high performance thin film transistor.
In addition, we have successfully developmental a machine that has hydrogenate impression on TFT without RF generator —《HOT-WIRE HYDROGENATOR》. We used the best hydrogenated parameter to hydrogenate metal-oxide-semiconductor device. Then we not only clearly reduce the density of interface state but also improve ON/OFF current ratio and subthreshold swing.

第一章 序論
1-1 前言.…………………………………………………… [1]
1-2準分子雷射結晶化(Excimer laser crystallization)…… [3]
1-3 次世代準分子雷射結晶化技術……………………… [6]
1-4 研究背景……………………………………………… [9]
1-5 研究目標……………………………………………… [10]
1-6論文流程……………………………………………… [11]
第二章 氫化技術
2-1 前言…………………………………………………… [12]
2-2 研究背景……………………………………………… [12]
2-3 研究目標……………………………………………… [14]
2-4 研究方法……………………………………………… [15]
2-5 實驗結果與討論……………………………………… [21]
2-6 元件特性之氫化改善……..………………………… [29]
2-7 本章結論……………………………………………… [33]
第三章 新摻雜技術的開發
3-1 前言…………………………………………………… [34]
3-2 研究背景……………………………………………… [34]
3-3 研究方法……………………………………………… [38]
3-4實驗結果與討論……………………………………… [40]
3-5本章結論……………………………………………… [45]
第四章　熱滯留層輔助結晶之薄膜電晶體製作
4-1 前言…………………………………………………… [46]
4-2研究方法……………………………………………… [47]
4-3 雙閘極結構薄膜電晶體製作……………………… [51]
4-4實驗結果與討論…………………………………… [57]
4-5本章結論……………………………………………… [59]
第五章 結論…………………………………………………… [60]
參考文獻……………………………………………………… [62]
著作…………………………………………………………… [65]

[1]R.S. Sposili and J. S. Im, ”Sequential lateral solidification of thin silicon films on SiO2 “, Appl. Phys. Lett., Vol.69, No.19, pp.2864-2866 (1996).
[2]CH. Oh, M. Ozawa, and M. Matsumura, “A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films”, Jpn. J. Appl. Phys, Vol.37, No.5A, pp.492-495 (1998).
[3]C.H.Kim, I.H.Song, S.H.Jung, M.K.Han, “A new high-performance poly-si TFT by simple ELA on selectively floating a-si layer”, IEEE,pp.34.3.1-34.3.4(2001)
[4]Y. Helen, R.Dassow, M.Nerding, K. Mourgues, F. Raoult, J.R. Kohler, T. Mohammed-Brahim, R. Rogel, O. Bonnaud, J.H. Werner, H.P. Strunk, “High mobility thin film transistors by Nd:YVO4-laser crystallization”, Thin Solid Films, Vol.383, pp.143-146 (2001).
[5]J P. Ch. Van der Wilt, B .D. van Dijk, G. J. Bertens, R. Ishihara and C.I.M. Beenakker, “Formation of location-controlled crystalline islands using substrate- embedded seeds in excimer-laser crystallization of silicon films”, Appl. Phys. Lett , Vol.79, No.12, pp.1819-1821 (2001).
[6]Wen-chang Yeh and M. Matsumura, “Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films”, Jpn. J. Appl. Phys, Vol.41, No.4A, pp.1909-1914 (2002).
[7]Wen-chang. Yeh, and Yu-chung. Liu, “Excimer Laser crystallization of silicon island with a peninsular structure as a nucleation”, AMLCD’03, pp.159-160 (2003).
[8]Donald A. Neamen, “Semiconductor Physics and Device, basic principles, third edition”, pp.450-471 (2003).
[9]S. M. Sze, “Semiconductor Devices, physics and technology, second edition”, pp.209-214 (2002).
[10]鄭晃忠,紀國鍾, “液晶顯示器技術手冊”, pp.298-299 (2004).
[11]C. Y. Chang, S. M. Sze, “ULSI Technology”, pp.364-365 (1996).
[12]Dieter K. Schroder, “Semiconductor Material and Device Characterization, second edition”, pp.394-401 (1998).
[13]A.T.Voutsas, “A new era of crystallization: advances in polysilicon crystallization and crystal engineering”, Applied Surface Science, Vol.208-209, pp.250-262 (2003).
[14]Seiichiro Higashi, Daisuke Abe, Yasushi Hiroshima, Kazuyuki Miyashita, Takahiro Kawamura, Satoshi Inoue and Tatsuya Shimoda, “High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor”, Jpn. J. Appl. Phys, Vol.41, No.6A, pp.3646-3650 (2002).
[15]K. Suzuki，M. Takahashi，M. Saitoh，”Influences of hydrogen contents in precursor Si film to excimer laser crystallization”，Appl. Phys. A 69，1999.
[16]Cheon-Hong Kim, Sang-Hoon Jung, Jae-Hong Jeon, Min-Koo Han, “A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors”, Thin Solid Films,Vol.397, pp.4-7 (2001).
[17]Ebelman M, Comptes Rendus Acad, Sci.Fr,21,502(1845).
[18]Kenji Uchida, Akira Izumi, Hideki Matsumura,“Novel chamber cleaning method using atomic hydrogen generated by hot catalyzer”, Thin Solid Films,Vol.395, pp.75-77 (2001).
[19]Kuninori Kitahara, Hiroyuki Nogi, Akihiro Moritani, “Hydrogenation of laser-crystallized poly-silicon thin films and characterization of defects using a catalytic method”, Thin Solid Films,Vol.395, pp.92-96 (2001).