臺灣博碩士論文加值系統

論 文 摘 要

本文旨在研究矽晶片經過陽極電化學蝕刻後，產生的多孔矽結構與各種特性做分析及應用。實驗利用自製的PVC電化學蝕刻槽與白鐵線圈，取代傳統昂貴的鐵氟龍陽極電化學蝕刻槽與白金線，將矽晶片蝕刻成具有非常微小孔洞之多孔矽晶片，並用紫外光燈觀察其光激發光現象，再使用掃瞄式電子顯微鏡(SEM)和3D表面輪廓儀(3D Profile)去觀察其多孔矽結構。之後再利用電鍍法，電鍍金屬(Al)在蝕刻後的矽晶片上做接點，量測其電氣特性做分析。另外，使用電路板上的電路，改變矽晶片內的電荷分布，成功達成另一種選擇性蝕刻多孔矽的方法。
實驗證明用簡單的材料做出來的設備，同樣也能蝕刻出相同效果的多孔矽晶片。多孔矽晶片光激發光產生明顯的橙紅色光；量測多孔矽的電氣特性有二極體的整流現象，且對光線很敏感，另外還會有特殊的負電阻現象，並且介紹使用等效電路來模擬負電阻現象。
關鍵詞：電化學蝕刻、光激發光現象、多孔矽(Porous Silicon)、掃瞄式電子顯微鏡(SEM)、3D表面輪廓儀(3D Profile)、負電阻。

ABSTRACT

In this study, the fabrication process, structure analysis of porous silicon and its applications are investigated. The iron coil and PVC materials are used to from a HF electrolyte container. SEM、3D Profile and Photoluminescence are measured on the porous silicon. Also, the Photo-response of UV light excitation are researched. The electric characteristic of the porous silicon with metal contacts are analyzed. In addition, an alternative method of selective etching based on the electric field applied by printed-circuit board is proposed. Excellent experiment results are obtained. Obvious orange-red light is shown on the porous silicon sample. Furthermore, the rectification and NDR phenomenon appear on the current-voltage characteristics which are very sensitive to the illumination condition.
Keyword: etching、photoluminescence、Porous Silicon、SEM、3D Profile 、NDR.

中文摘要 I
英文摘要 II
目錄 III
圖目錄 VI
表目錄 XI
第一章 緒論 1
1-1 多孔矽之簡介 1
1-2 多孔矽的形成及理論分析 4
1-2-1 比爾模型（Beale Model） 7
1-2-2 擴散限制模型（Diffusion-Limited Model） 9
1-2-3 量子模型（Quantum Model） 9
第二章 多孔矽實驗過程與步驟 11
2-1 實驗晶片與蝕刻溶液準備 11
2-2 矽晶片清潔 12
2-3 陽極氧化蝕刻矽晶片生成多孔矽 13
2-4 分析儀器介紹 15
第三章 一般型多孔矽實驗 19
3-1 定電壓多孔矽蝕刻 20
3-1-1 10V定電壓 20
3-1-2 15V定電壓 24
3-1-3 20V定電壓 28
3-1-4 低電壓後轉高電壓蝕刻(2V轉15V) 32
3-2 定電流多孔矽蝕刻 37
3-2-1 220mA定電流 37
3-3 多孔矽照光 41
3-3-1 15V定電壓加鹵素燈照光 41
3-3-2 2V轉220mA定電流加鹵素燈照光 45
3-4 重複蝕刻的多孔矽結構 49
3-4-1 第一次蝕刻多孔矽 49
3-4-2 第二次蝕刻多孔矽 52
3-5 雙面多孔矽蝕刻 56
3-6 多孔矽的發光檢測 59
3-7 結論 60
第四章 特殊型多孔矽實驗 61
4-1 利用電路板改變電化學迴路 61
4-2 選擇性蝕刻多孔矽 62
4-3 選擇性蝕刻多孔矽的結果與討論 78
4-4 極性反接後的電路板蝕刻 81
4-5 重複選擇性蝕刻多孔矽 84
4-6 結論 84
第五章 多孔矽的電氣特性 85
5-1 逆向電化學-電鍍 85
5-2 多孔矽的光電特性 87
5-3 多孔矽的特殊負電阻特性 89
5-4 結論 90
第六章 負電阻(NDR) I-V特性的等效電路模擬 91
6-1 兩個電晶體和六個電阻所組成的NDR等效電路 91
6-1-1 起始的高電阻區(A) 93
6-1-2 正電阻區(B) 94
6-1-3 負電阻區(C) 96
6-1-4 終值高電阻區(D) 98
6-2 NDR等效電路 HSPICE模擬結果 99
6-2-1 調整電阻Rs的反應現象 100
6-2-2 調整電阻R1的反應現象 101
6-2-3 調整電阻R2的反應現象 102
6-2-4 調整電阻R3的反應現象 103
6-2-5 調整電阻R4的反應現象 104
6-2-6 調整電阻R5的反應現象 105
6-3 兩個NDR元件的串聯 106
6-3-1 兩個相同NDR元件串聯相接 106
6-3-2 兩個不同NDR元件串聯相接 107
6-4 兩個NDR元件的並聯 113
6-4-1 兩個相同NDR元件並聯相接 113
6-4-2 兩個不同NDR元件並聯相接 114
6-5 兩個NDR元件的正反相接 116
6-6 結論 117


第七章 論文總結論與未來展望 118
7-1 論文總結論 118
7-2 未來展望 119
參考文獻 120

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