臺灣博碩士論文加值系統

本研究以準分子雷射結晶的低溫複晶矽薄膜電晶體製程去實現在一塊平面顯示器的玻璃基板上，整合平面顯示器的驅動電路、輸入輸出介面及訊號處理電路等數位邏輯。毫無疑問地，這將導致外部元件的數量和面積驟減，因此整個系統的重量可以更輕，厚度可以更薄，解析度更高。然而，由於隨機的成核點和雷射能量密度的製程窗口很窄，以準分子雷射結晶製作的傳統式低溫複晶矽薄膜電晶體在元件特性方面，特別是小尺寸元件的均勻性表現很差。除此之外，準分子雷射波與波的變異性亦造成元件跟元件間有著極大的差異。傳統式元件的場效應電晶體電子移動率太低以致於在高電流應用方面及高解析度面板不敷使用。以準分子雷射結晶使非晶矽間隙結構重新結晶製作複晶矽薄膜電晶體，經由雷射退火技術形成的晶粒成長實現了高電子移動率，提升了平面顯示的開口率及解析度。

This research the low temperature poly crystal Si film transistor system regulation which crystallizes by the Excimer-laser realizes integrated circuit on the panel of glass. Integrate the driver and input output logic circuit on the panel. Without a doubt, This will cause exterior part the quantity and the area suddenly reduces.
Therefore the overall system weight may lighter, thickness may be thinner, the resolution goes high. However, the laser energy density system regulation window is very narrow as a result of the stochastic coring .By Excimer-laser crystallization manufacture traditional type low temperature poly crystal Si film transistor in part characteristic aspect. The small size part uniform performance is bad. In addition, the Excimer-laser wave of profile is different and the chip also have the enormous difference. The traditional type part field effect transistor migration of electrons rate is low down to in the high electric current application aspect and the high resolution insufficient. Use Laser Anneal recrystallize the amorphous Si become poly Si transistor. The crystal grain growth which by which might control the crystallization forms to realize the high migration of electrons rate, has promoted the plane demonstration
transparency and resolution.

目　　次
摘要……………………………………………………………………………….…….iv
英文摘要……………………………………………………………………….….…….v
誌謝………………………………………………………………………………….….vi
目次…………………………………………………………………………………….vii
表目錄…………………………………………………………………………………..ix
圖目錄…………………………………………………………………………………...x
第一章 序論…………………………………………………………………………...1
1.1 概說…………………………………………………………………………..1
1.2 低溫多晶矽特色……………………………………………………………..1
1.3 低溫多晶矽的應用…………………………………………………………..1
1.4 研究目的……………………………………………………………………..2
第二章 LTPS 準分子雷射退火原理…………………………….…………………..3
2.1 LTPS Process Flow……………………….…………………………………..3
2.2準分子雷射原理……………………………………………………………..10
2.3準分子雷射設備……………………………………………………………..15
2.4雷射beam特性測試資料……………………………………………………15
第三章 實驗流程與結果………………………………..………………………….…21
3.1退火試片準備……………………………………………………………….21
3.2玻璃基板清洗……………………………………………………………….21
3.3 PECVD for a-Si……………………………………………………………...22
3.4 PECVD for SiO2…………………………………………………………….23
3.5氫化………………………………………………………………………….24
第四章 實驗結果……………………………………………………………………...26
4.1結晶物理現象探討………………………………………………………….26
4.2 Laser能量與膜厚探討………………………………………………………32
4.3 Laser氣體更換與Laser能量變化探討…………………………….………34


第五章 結論…………………………………………………………………………...36
參考文獻……………………………………………………………………………….37

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