臺灣博碩士論文加值系統

本研究使用溶膠-凝膠法開發低成本、可量產及大面積的氧化鋅(ZnO:Al, AZO)透明導電薄膜之製程技術。在研究的過程中，除了探討製程變因對AZO薄膜之電阻率與透明度的影響並找出其中的關鍵因素，建立溶膠-凝膠製程中AZO薄膜的結晶機制、導電機制、鋁摻雜的最適比例與氧空缺的影響等相關理論模型，以作為進一步控制薄膜特性技術的基礎。氧化鋅透明導電薄膜，可應用於太陽能晶片之透明電極或其他需要同時兼具導電與透明特性之光電元件。利用醋酸鋅與異丙醇為反應溶液，加入硝酸鋁作為鋁摻雜來源，在康寧玻璃基板上以浸漬塗佈的方式覆膜，藉由多次層的方式可控制其膜厚。使用高溫爐搭配真空幫浦，以不同的熱處理條件，即改變溫度、退火時間、真空條件等製程參數，進行晶體成長與刻意製造氧空缺，藉由這些化學反應及熱處理而得到高導電性及高穿透率的氧化鋅薄膜。根據實驗結果，經由多層覆膜的製程可逐漸增強晶粒在(002)晶面的成長，鋁摻雜最適當的比例為Al/Zn≦2at.%，並以600℃的結晶溫度熱處理可得到較佳的結晶品質。本研究所建立之溶膠-凝膠製程步驟可明顯改善AZO薄膜的光學與電學性質，最佳透明導電薄膜之片電阻可達360Ω/□，電阻率為1.1×10-2Ω．cm，可見光穿透率為80%以上，已達可應用於太陽能晶片透明電極之條件。

In this study, the sol-gel method was used to develop a manufacturing procedure for growing large area AZO (ZnO:Al) thin films with low cost and suitable for mass production. We investigated the influences of manufacturing parameters on the resistance and transmittance on the AZO thin films as well as tried to identify the key factors of these influences. Furthermore, we established a model of film growth mechanism and conducting mechanism. The best ratio of Al dopant and the influences of oxygen vacancy concentration during the manufacturing process were estimated. These can serve as the basis for further development of techniques to control the properties of thin films. ZnO transparent conductive thin films can be applied on the transparent electrode or other optoelectronic devices which require the properties of conducting and transparency at the same time.In our experiments, Zinc acetate dihydrate was used as a starting material, lsopropylalcohol and aluminum nitrate were served as the solvent and dopant sources respectively. Then, thin films were laid by dipping on a substrate of corning glass. The thickness of the films can be controlled by multilayer method. After that, we used tube furnaces combined with a vacuum pump to grow crystal and create oxygen vacancy intentionally by varying manufacturing parameters such as annealing temperatures, annealing time, and vacuum conditions, etc. By way of chemical reactions and heat treatment, ZnO thin films with high conductivity and transmittance are obtained.The experiment results show that the manufacturing process with multilayer method has enhanced the growth of crystalline on (002) plane, the ideal ratio of Al dopant was Al/Zn ≦ 2.0 at.%, and better quality of crystalline was obtained under heat treatment of 600℃. This indicates that the manufacturing process with sol-gel method has obviously improved the optical and electrical properties of the AZO thin films. For transparent conductive thin films of the best quality, the sheet resistance reached 360Ω/□, the resistance reached 1.1×10-2 Ωcm, and the transmittance in visible light area was over 80%. This means that the thin film meets the requirements for being applied onto the transparent electrode of solar cells.

摘要
英文摘要
目次
表目錄
圖目錄
第一章 序論................................................................................................................1
1.1 前言.......................................................................................................................1
1.2 透明導電薄膜介紹...............................................................................................1
1.2.1 透明導電薄膜的種類................................................................................1
1.2.2 透明導電薄膜的應用................................................................................3
1.3 文獻回顧...............................................................................................................4
1.4 目前透明導電薄膜的主要問題及解決方向.....................................................11
1.5 研究動機與方法.................................................................................................14
第二章 透明導電薄膜基本原理與成膜技術..........................................................15
2.1 透明導電氧化物之導電機制.............................................................................15
2.2 溶膠-凝膠法介紹................................................................................................18
2.2.1 溶膠-凝膠法特點.....................................................................................19
2.2.2 溶膠-凝膠法製膜技術.............................................................................20
第三章 實驗設備及性能量測..................................................................................23
3.1 實驗.....................................................................................................................23
3.1.1 實驗藥品及材料......................................................................................23
3.1.2 實驗步驟..................................................................................................24
3.2 薄膜特性量測儀器.............................................................................................26
3.2.1 薄膜微結構..............................................................................................26
3.2.2 X光繞射...................................................................................................26
3.2.3 四點探針..................................................................................................29
3.2.4 霍爾效應..................................................................................................30
3.2.5 透光率......................................................................................................33
第四章 實驗結果討論..............................................................................................34
4.1 微結構性質.........................................................................................................34
4.1.1 氧化鋅粉末結構......................................................................................34
4.1.2 膜厚的控制..............................................................................................37
4.1.3 熱處理溫度對薄膜之影響......................................................................40
4.1.4 層數、濃度、鋁摻雜量對於薄膜性質的影響..........................................43
4.2 光學性質.............................................................................................................55
4.3 電學性質.............................................................................................................57
第五章 結論..............................................................................................................63
參考文獻......................................................................................................................65

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