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研究生:蔡政宏
研究生(外文):Cheng-Hung Tsai
論文名稱:奈米碳管電子元件之製備與應用
論文名稱(外文):A Study on Carbon Nanotube Electronic Devices and Their Applications
指導教授:黃榮堂黃榮堂引用關係
口試委員:呂志誠呂學士
口試日期:2006-06-29
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:機電整合研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:英文
論文頁數:139
中文關鍵詞:奈米碳管奈米碳管電晶體低溫製造CMOS整合元件
外文關鍵詞:Carbon Nanotubes (CNTs)Carbon Nanotube Field-Effect Transistors (CNTFETs)Low-Temperature FabricationDielectrophoresis (DEP)CMOS Integrated Devices
相關次數:
  • 被引用被引用:5
  • 點閱點閱:228
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  • 收藏至我的研究室書目清單書目收藏:0
本文為奈米碳管電子元件之製備、特性研究與應用。以低溫製備的方式將奈米碳管結合奈米微機電技術製作出奈米碳管電子元件,探討其電子傳遞之物理特性。奈米碳管擁有優良的電子傳遞特性,製作為奈米碳管電子元件後,裸露在外的奈米碳管對於外界環境相當靈敏,非常適合用來做為感測元件。在實驗製作方面,我們以退化型之重掺雜矽基材作為背閘極,基材上方長出100 nm之氧化矽絕緣層,配合微影製程定義鈀(Pd)電極於介電層上,再利用介電泳力將奈米碳管接合至電極上方,完成奈米碳管電子元件之製作。本文將商用之單壁奈米碳管粉末溶解於十二烷基硫酸鈉(SDS)有機溶劑中,使之裹上一層有機高分子之膠束,並以物理方法將奈米碳管純化與單根化,在特定的介電泳力參數控制下,成功地製作出擁有場效應特性且電流的ON-OFF達103~104個等級之奈米碳管場效應電晶體與電阻特性之奈米碳管電子元件。在去除裹覆於碳管表面之SDS分子後,能夠降低奈米碳管與接觸金屬之接觸電阻並且減少電子散射的機會,進而改善奈米碳管電子元件特性,提升”ON”電流值約6倍。
本論文將製作好的奈米碳管場效應電晶體接上不同序列但相同鹼基之單股去氧核醣核酸(ssDNA)分子,藉由奈米碳管與ssDNA分子間的π-π堆疊作用力讓ssDNA上的鹼基接觸到奈米碳管管壁表面,可作為常溫操作、高靈敏度及快速自我回復之氣體感測器裝置。
In this thesis, we will discuss the properties, fabrication, and applications of the carbon nanotube electronic devices. Carbon nanotube (CNT) electronic devices were fabricated by low-temperature technique combined with nano-electro-mechanical technologies (NEMS), and the physics of electrical transport will be investigated. Since CNTs have superb mechanical and electrical properties, the fabricated CNT electronic devices with bare CNT channels are very sensitive to the environments which can be used for sensor devices. Otherwise, the low-temperature fabrication can integrate CNTs with CMOS circuitry to disclose a processor-inside sensor system. In the experimental processes, the degenerately p-doped silicon wafers with 100 nm silicon oxide were used as the back gate; palladium (Pd) metal electrodes were formed by photolithography combined with lift-off technique, and finally deposited and aligned CNTs on the predefined electrode pairs to complete devices fabrication by using alternating current dielectrophoresis (AC-DEP). Commercial as-prepared single-walled carbon nanotube (SWCNT) soot was suspended in sodium dodecyl sulfate (SDS) solution and the nanotubes would be coated with SDS micelle, followed by physical purification and debundling treatments, these SWCNTs were manipulated by AC-DEP with experimental control and successfully fabricated carbon nanotube field-effect transistors (CNTFETs) with on/off-state current ratios of 103~104 order and other CNT devices with resistor characteristics. After removing SDS residuals coated on SWCNTs, the formation of an improved metal-CNT contact and reducing the probabilities of carrier scattering resulted in improving performance of the CNT devices and also can have “ON” current promoted by 6 factors.
The three fragmented (20-mer) single-stranded DNA (ssDNA) sequences are composed of identical bases A, T, C respectively and all were dropped on the fabricated CNTFETs, and the bases of ssDNA are extended from the backbone and stacked onto the sidewall of SWCNTs via π-π-stacking interaction. These CNTFETs decorated with ssDNA can be utilized as a gas sensor with high sensitivity, self-regenerating and working in room-temperature environment.
CHAPTER 1: Introduction 1
1.1 Preface 1
1.2 Literature Review 2
1.2.1 Genome 3
1.2.2 Methods of DNA Sequencing 6
1.2.2.1 DNA Sequencing by Chemical Methods 6
1.2.2.2 DNA Sequencing by Physical Methods 9
1.2.3 Conventional Fabrication Methods of Carbon Nanotubes Electronic Devices 13
1.2.3.1 Chemical Vapor Deposition 13
1.2.3.2 Carbon Nanotubes Alignment by Atomic Force Microscope Manipulation 14
1.2.3.3 Other Methods of Low-Temperature Carbon Nanotubes Synthesis for Carbon Nanotube Electronic Devices Fabrication 15
1.3 Motivation 16
1.4 Research Goal and Content Frame of This Thesis 17

CHAPTER 2: Fabrication of Carbon Nanotube Field-Effect Transistors and Their Applications 19
2.1 Structure of Carbon Nanotubes 19
2.1.1 Chirality 19

2.1.2 Single-Walled versus Multi-Walled Carbon Nanotubes 23
2.1.3 The Smallest Diameter of Carbon Nanotubes 24
2.2 Synthesis of Carbon Nanotubes 26
2.2.1 Arc-Discharge 27
2.2.2 Laser Ablation 28
2.2.3 Chemical Vapor Deposition 28
2.3 Carbon Nanotube Field-Effect Transistors 32
2.3.1 Schottky Barriers at Metal-Nanotube Junctions 33
2.3.1.1 Altering of Schottky Barriers by Gate Field Controlling 33
2.3.1.2 Influences of Nanotube Diameter and Work Functions of Contacted Metals on Schottky Barriers 35
2.3.2 p-Type, n-Type, or Ambipolar Behavior of Carbon
Nanotube Field-Effect Transistors 36
2.3.3 Contact Resistance, Ballistic Transport, Current Density and Mobility in the Carbon Nanotube Field-Effect Transistors 40
2.4 Fabrication of Carbon Nanotube Field-Effect Transistors 42
2.4.1 Purification and Debundling of As-Prepared Single-Walled Carbon Nanotubes 43
2.4.2 Separation of Semiconducting from Metallic Single-Walled Carbon Nanotubes 44
2.4.3 Alternating-Current Dielectrophoretic Techniques 45
2.4.3.1 Dielectrophoretic Manipulation of Spherical Particles 46
2.4.3.2 Dielectrophoretic Manipulation of Rod-Shape Objects 50
2.4.3.3 Dielectrophoretic Parameters of Micelle-Coated Cylindrical Carbon Nanotubes 54
2.5 Carbon Nanotube-Based Sensor Devices 59
2.5.1 Carbon Nanotube Biosensors 59
2.5.1.1 Functionalization of Carbon Nanotubes 59
2.5.1.2 Gate Geometries of the Carbon Nanotubes Biosensors 60
2.5.2 Carbon Nanotube Gas Sensors 61

CHAPTER 3: Fabrication Processes of Carbon Nanotube Electronic Devices 65
3.1 Experimental Design and Realization 66
3.2 Design and Fabrication of Microelectrodes 68
3.2.1 Photo Mask Design 68
3.2.2 Microelectrodes Fabrication by Photolithography 70
3.3 Purification and Debundling of Single-Walled Carbon Nanotubes 72
3.3.1 Commercial As-Prepared Single-Walled Carbon Nanotubes 73
3.3.2 Purification and Debundling of AP-grade Single-Walled Carbon Nanotubes by Physics Mechanisms 74
3.4 Alignment of Single-Walled Carbon Nanotubes by Alternating Current Dielectrophoresis 76
3.5 Electrical Transport Characterization of Carbon Nanotube Devices 79
3.6 Single-Stranded DNA Captured on Sidewall of Carbon Nanotubes 81

CHAPTER 4: Experimental Results 83
4.1 Microelectrode Patterns 83
4.2 Carbon Nanotube Electronic Devices 86
4.3 Characteristics of Electrical Transportation 90
4.4 Electrical Breakdown for Burning Nanotubes on
Carbon Nanotube Electronic Devices 96
4.5 Removing Micelle-Coated Residuals to Improve the Performances of Carbon Nanotube Devices 98
4.6 Interaction of the Carbon Nanotube Devices with DNA Molecules 101
4.7 DNA Decorated Carbon Nanotube Devices as Gas Sensors 118

CHAPTER 5: Conclusions 121
5.1 Conclusions 121

ABBREVIATIONS 125
REFERENCES 127
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