臺灣博碩士論文加值系統

近年來積體電路(IC)速度發展有愈來越快之趨勢，而速度愈快所造成的電磁干擾問題也越嚴重，雖然IC本身並無值得注意的輻射，但IC被認是電子系統中輻射、傳導發射電磁能量的來源，為了瞭解如何評估一顆積體電路(IC)的電磁干擾特性，以作為積體電路(IC)設計與改善其電磁干擾的參考以及做為比較或其他使用上的目的，本文提出量測積體電路(IC)電磁干擾標準(IEC61967)的介紹，並使用IEC61967-2、IEC61967-4、IEC61967-6這三個標準所規定的量測方法，對相同一顆Microchip公司所生產的微控制器(PIC18F452)，做傳導性與輻射性干擾的量測與分析比較，結果不論為傳導干擾或是輻射干擾，其最大干擾值並不全是出現在系統時脈10MHz頻率週期上，而是出現在指令週期T=4 sec (1/2.5MHz) 頻率上，因此所選用的這顆微控制器，最大的電磁干擾值是發生在執行每一個指令的時候。

The velocity profile in Integrated Circuits (IC) has more quickly developed in recently years and the problems in electromagnetic emission, caused by high velocity, also got more serious. Although IC usually does not radiate significantly, they are often seen as the primary sources of radiated and conducted emission of electromagnetic energy in electronic systems.
In order to investigate how to evaluate the characteristics of electromagnetic emission of IC and improve the situation for future relative references in IC designs, as well as the measurement results can be used for comparison or other purpose. this study introduce the standard IEC61967 measuring the electromagnetic emission of IC, and also used the measuring methods of IEC61967-2、IEC61967-4、IEC61967-6 to analyze the conducted emission and radiated emission of the same micro-controller(Microchip Technology Inc. PIC18F452).
The results demonstrated that no matter conducted emission or radiated emission, the largest interference value was not only at the clock frequency cycle of 10KHz, but on the instruction cycle of the frequency T=4 sec (1/2.5MHz). Therefore, the largest electromagnetic emission of this micro- controller (PIC18F452) would show up when each instruction code was performed.

目 錄
簽名頁
英文摘要．．．．．．．．．．．．．．．．．．．．．．．．．i
中文摘要．．．．．．．．．．．．．．．．．．． ．．．．．ii
誌謝．．．．．．．．．．．．．．．．．．．．．．．．．．iii
目錄．．．．．．．．．．．．．．．．．．．．．．．． ．．iv
第一章 導論．．．．．．．．．．．．．．．．．． ．．．．．1
1.1 研究背景與目的．．．．．．．．．．．．．．． ． ．．．1
1.2 本文架構．．．．．．．．．．．．．．． ．．． ．．．．5
第二章 基本原則與理論．．．．．．．．．．．．． ．．．．．6
2.1 晶片內部問題．．．．．．．．．． ．．．． ．．．． 6
2.1.1 crosstalk．．．．．．．．．．．．． ．．．．．6
2.1.2同步開關雜訊．．．．．．．．．．．．．．．．．． 8
2.2外部耦合 EMC問題．．．．．．．．．．．．．．．．．．8
2.2.1傳導耦合．．．．．．．．．．．．．． ．．．．．．9
2.2.2電場耦合．．．．．．．．． ．．．．．．．． ．．．．．9
2.2.3磁場耦合．．．．．．．．．．．．．． ．．．．．．10
2.2.4輻射場耦合．．．．．．．．．．．．．． ．．．．．10
2.3橫向電磁箱(TEM cell) ．．．．．．．．．．．．．．． ．11
2.4磁場探針．．．．．．．．．．．．．．．．．．．．．．．．13
第三章 IC電磁干擾量測測試方法．．．．．．．．．．．．．．．17
3.1橫向電磁箱量測法(Transverse Electromagnetic Cell
method) ．．．．．． ．．．．．．．．．．．18
3.1.1量測原理．．．．．．．．．．．．．．．．．．．．．．．18
3.1.2 量測設備．．．．．．．．．．．．．．．．．． ．．．．19
3.1.3 測試配置．．．．．．．．．．．．．．．．． ．．．．．20
3.1.4 測試PCB．．．．．．．．．．．．．．． ．．．．．20
3.1.5 干擾量測．．．．．．．．．．．．．．．．． ．．．23
3.2 表面掃描量測法（Surface scan method）．．．．．．．．23
3.2.1量測原理．．．．．．．．．．．．．．．．．．． ．．．23
3.2.2 RF量測設備．．．．．．．． ．．．．． ．．．．．．．．24
3.2.2.1近場探針．．．．．．．．．．．．．．． ．．．．．．．25
3.2.3探針位置及資料取得系統．．．．．．．．．．． ．．．．．26
3.2.4測試配置．．．．．．．．．．．．．．．．．．．．． ．．28
3.2.5測試PCB及測試周圍條件．．．．．．．．．．．．．．． ．29
3.2.6測試技術．．．．．．．．．．．．．．．．．． ．．．．．30
3.2.7資料分析．．．．．．．．．．．．．．．．．．．． ．．．30
3.3直接耦合1Ω/150Ω量測法(1Ω/150Ω direct coupling
method) ．．．．．．．．．．．．．．．．．．．．31
3.3.1量測原理．．．．．．．．．．．．．．．．．． ．．．．．31
3.3.2 RF電流量測．．．．．．．． ．．．．．．．．．．．32
3.3.2.1 RF電流探針的規格．．．．．．．． ．．．．．． ．．．33
3.3.3 IC I/O腳的RF電壓量測．．．．．．．．．．．．．． ．．34
3.3.4匹配網路．．．．．．．．．．．．．．．．．．．． ．．．35
3.3.5印刷線路板設計 Layout．．．．．．．．．．． ．．．．．36
3.3.5.1方形測試板．．．．．．．．．．．．．．．．．．． ．．37
3.3.5.2圓形測試板．．．．．．．．．．．．．．．．．．． ．．38
3.3.5.2.1 EMC主測試印刷電路板(PCB)規格．．．．．． ．．． 38
3.3.5.2.2 EME IC測試板之主要規格．．．．．．．． ．．．．39
3.4 工作平台法拉第工作箱量測法（Workbench Faraday Cage
method）．．．．．．．．．．．．．．．．45
3.4.1量測原理．．．．．．．．．．．．．．．．．．．．．．．．45
3.4.2工作檯觀念．．．．．．．．．．．．．．．．．．．．．．．46
3.4.3 測試設置．．．．．．．．．．．．．．．．． ．．．．．．47
3.4.4 法拉第工作箱．．．．．．．．．．．．．．． ．．．．． 49
3.4.5轉化為遠場發射程度．．．．．．．．．．．．．．．．．．．50
3.5 磁場探針量測法(Magnetic probe method) ．．．．．．．．51
3.5.1量測原則．．．．．．．．．．．．．．．．．．．．．．．．51
3.5.2磁場探針．．．．．．．．．．．．．．．．．．．．．．．．52
3.5.3測試設置．．．．．．．．．．．．．．．．．．．．．．．．53
3.5.4測試技術．．．．．．．．．．．．．．．．．．．．．．．．54
第四章 測試IC及線路板．．．．．．．．．．．．．．．． ．．．．56
4.1 測試IC(18F452) ．．．．．．．．．．．．．．． ．．．．．56
4.2測試規畫．．．．．．．．．．．．．．．．．．．．．．． ．．56
4.3標準測試板基本規格．．．．．．．．．．．．．．．．．．．．60
4.4測試板線路．．．．．．．．．．．．．．．．．．．．．．．．62
4.4.1 TEM cell測試法與1Ω/150Ω直接耦合量測法．．．．．． ．62
4.4.2磁場探針法．．．．．．．．．．．．．．．．．．．．．．．67
4.4.2.1磁場探針(magnetic probe)的規格．．．．．．．．．．．69
4.4.2.2 IC量測測試板．．．．．．．． ．．．．．．．．．．．．70
4.5測試驅動程式．．．．．．．．．．．．．．．．．．． ．．．．74
第五章 實驗量測方法與量測結果．． ．．．．．．．．．． ．．．．76
5.1橫向電磁箱(TEM cell)量測法．．．．．．．．．．．．．．．．76
5.1.1量測方法．．．．．．．．．．．．．．．．．．．．． ．．．76
5.1.2量測結果．．．．．．．．．．．．．．．．．．．．．． ．．78
5.2直接耦合1Ω/150Ω量測法．．．．．．．．．．．．．．．． ．．88
5.2.1 1ΩRF電流探針的校驗．．．．．．．．．．．．．．．．．．．88
5.2.2 IC輸出信號及電源、接地的RF電壓量測．．．．．．．．．．．93
5.2.3量測結果．．．．．．．．．．．．．．．．．．．．．．．．．94
5.3磁場探針量測法．．．．．．．．．．．．．．．．．．．．．．．100
5.3.1 probe之空間定位治具．．．．．．．．．．．．．．．． ．．101
5.3.2磁場探針校正．．．．．．．．．．．．．．．．．．．．．．．102
5.3.2.1磁場探針校正用板．．．．．．．．．．．．．．．．．．．．102
5.3.2.2校正程序(probe calibration procedure) ．．．．．．．102
5.3.3量測方法．．．．．．．．．．．．．．．．．．．．．．．．．105
5.3.4量測結果．．．．．．．．．．．．．．．．．．．．．．．．．107
5.4量測結果分析．．．．．．．．．．．．．．．．．．．．．．．．111
第六章 結論與未來展望．．．．．．．．．．．．．．．．．．．．．115
6.1結論．．．．．．．．．．．．．．．．．．．．．．．．．．．．115
6.2未來展望．．．．．．．．．．．．．．．．．．．．．．．．．．116
參考文獻．．．．．．．．．．．．．．．．．．．．．．．．．．．．118

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