臺灣博碩士論文加值系統

本研究是針對InGaP/GaAs/Ge 多接面太陽電池抗反射膜設計及轉換效率提升的研究。

在本實驗中我們首先探討Si3N4 單層抗反射膜，TiO2/SiO2 雙層抗反射膜及TiO2/
Al2O3 雙層抗反射膜對InGaP/GaAs/Ge 太陽電池能量轉換效率的影響，

實驗發現對於Si3N4 單層抗反射膜在中心波長600 nm所改進的短路電流平均15.07 %。

TiO2/SiO2 雙層抗反射膜在中心波長500 nm時所改進的短路電流最多平均可達35.14 %，得知雙層抗反射膜比單層抗反射膜的設計優良許多。

進一步分析雙層抗反射膜對InGaP/GaAs/Ge 各子電池的量子效率，發現雖然TiO2/SiO2 抗反射膜對各子電池均有50 %以上的效率提升，但其整體效率僅提升35 %，這是因為整個InGaP/GaAs/Ge 太陽電池的輸出電流(效率)受限於最上層的InGaP 子電池，所以即使整個太陽光譜均因抗反射塗裝而改變其量子效率，但實際輸出只有短波長部分有效，導致效率無法如量子效率一樣提升。

太陽電池的串聯電阻影響能量轉換效率很大，而金屬與半導體的接觸電阻往往也是串聯電阻的主要來源之一，本實驗利用轉換長度法成功的找出最佳歐姆接觸的製程，在本實驗中我們利用Ti/Pd/Ag 作為背面接觸電極，並在460 ℃下燒結處理後得到最佳歐姆接觸。正面電極是Ni/Ge/Au 的組合，經370 ℃燒結處理後效果最佳。

本實驗也發現太陽電池在切割後會因邊緣的切割損壞導致漏電流增加，利用浸潤H2O：NH4OH：H2O2 的方式，我們成功的減少了邊緣漏電流進而提升了太陽電池開路電壓及能量轉換效率。

This research is aimed at improving the efficiency of InGaP/GaAs/Ge multi-junction solar cell by suitable design of AR coating.

In this work we first investigate the influence of Si3N4 monolayer, TiO2/SiO2 double layer and TiO2/Al2O3 double layer on the energy conversion efficiency of InGaP/GaAs/Ge solar cells.

We have found that the short circuit current can be improved 15.07 % by coating Si3N4 mono-AR coating designed at 600 nm wavelength. The short circuit current can be improved up to 35.14 % by TiO2/SiO2 double layer AR coating designed at 500 nm wavelength.

It’s obvious that TiO2/SiO2 coating has the best result. Further experiments found, though TiO2/SiO2 AR coating can improve the QE of all sub-cells’ efficiency more than 50 %, the overall cell’s efficiency is only improved by 35 %.

This is because the top InGaP sub-cell is the output current (efficiency) limiting cell of this InGaP/GaAs/Ge multi-junction cell.

Therefore even thought all sub-cells efficiencies are improved by AR coating, only the top cell is benefited form the AR coating.

Series resistance also influence the cell’s efficiency very much. Contact resistance is one of the major sources of the solar cell series resistance.

In this work we use transfer length method (TLM) to find out the best metallization conditions for InGaP/GaAs/Ge solar cells.

We found Ti/Pd/Ag back contact metallization with 460 ℃ sintering and Ni/Ge/Au front contact metallization with 370 ℃ sintering can result in lowest contact resistance.

During the experiments, we also found that the cut solar cells from the wafer may cause cutting damage on the cell’s edge.

These cutting damage can increase the dark leakage current and therefore decrease solar cell’s open circuit voltage.

We found that dipping the cell in H2O：NH4OH：H2O2 solution for a short time can successfully decrease dark leakage current and improve the cell efficiency.

中文摘要 ．．．．．．．．．．．．．．．．．．．．．．．．．．Ⅰ
英文摘要 ．．．．．．．．．．．．．．．．．．．．．．．．．．Ⅲ
致謝 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．Ⅴ
目錄 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．Ⅵ
表目錄 ．．．．．．．．．．．．．．．．．．．．．．．．．．．Ⅷ
圖目錄 ．．．．．．．．．．．．．．．．．．．．．．．．．．．Ⅸ

第一章 緒論．．．．．．．．．．．．．．．．．．．．．．．．．01
第二章 太陽電池原理．．．．．．．．．．．．．．．．．．．．．04
2.1 太陽光譜 ．．．．．．．．．．．．．．．．．．．．04
2.2 太陽電池基本結構與工作原理 ．．．．．．．．．．．07
2.3 單接面太陽電池與多接面太陽電池 ．．．．．．．．．18
2.4 抗反射膜與太陽電池的轉換效率 ．．．．．．．．．．19
2.4.1 單層膜原理 ．．．．．．．．．．．．．．．．．19
2.4.2 雙層膜原理 ．．．．．．．．．．．．．．．．．23
第三章 InGaP/GaAs/Ge 多接面太陽電池製作 ．．．．．．．．．．25
3.1 InGaP/GaAs/Ge 多接面太陽電池結構與磊晶生長 ．．．25
3.2 InGaP/GaAs/Ge 太陽電池正背面電極製作 ．．．．．．28
3.3 InGaP/GaAs/Ge 太陽電池抗反射膜製作 ．．．．．．．38
3.4 InGaP/GaAs/Ge 太陽電池切割後處理 ．．．．．．．．51
第四章 InGaP/GaAs/Ge 太陽電池量測 ．．．．．．．．．．．．．53
4.1 InGaP/GaAs/Ge 太陽電池量子效率量測 ．．．．．．．53
4.2 TiO2/SiO2 雙層抗反射膜對InGaP/GaAs/Ge 太陽電池的
　　　　　　 影響 ．．．．．．．．．．．．．．．．．．．．．．57
4.3 Si3N4 單層抗反射膜對InGaP/GaAs/Ge 太陽電池的影響．65
第五章 結論．．．．．．．．．．．．．．．．．．．．．．．．．70
參考文獻 ．．．．．．．．．．．．．．．．．．．．．．．．．．72
自傳 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．75

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