臺灣博碩士論文加值系統

本論文研究兩種典型的射頻放大器，一為寬頻驅動放大器，另一則為WiMAX規格射頻必v放大器。

第一部份是探討寬頻驅動放大器的設計，實現一個多重回授路徑架構實現寬頻帶驅動放大器；且分別藉由改變Kukielka架構與合適的電阻，以達成電路增益高平坦度並避免增益曲線高突現象，同時更進一步嘗試減少雜訊指數。

第二部份是探討一個針對行動式WiMAX規格設計的必v放大器，包含完整的必v放大器設計流程；並利用附加在主動偏壓電路上的線性化電容與電阻，及運用具諧波抑制的輸出匹配網路，可有效的增加電路線性度與溫度的穩定性。

Two typical kinds of RF amplifiers have been investigated in this thesis. One is the wideband driver amplifier and another is WIMAX used radio frequency power amplifier.

The first part is devoted itself onto the design of wideband driver amplifier. A wide-band driver amplifier using a multiple resistive feedback path configuration and will be fabricated. It not only procures high gain but also behaves with a smooth gain curve. It can also reduce its noise figure by changing the Kukielka configuration with appropriate resistance.

The second part is focused on the design of a radio frequency power amplifier for the mobile WiMAX applications. A design flow of power amplifier was included, and the circuit can effectively increase linearization and stability of temperature by the linearizing capacitors and resistors in the active bias circuit, and with a harmonic termination based matching network on the output terminal.

Acknowledgement …..……………………………………………………………..i
Abstract（Chinese） ………………………………………………………………ii
Abstract（English）……………………………………………………………….iii
Table of Contents ……………………………………………………………...…iv
List of Figures …………………………………………………………..…………vi
List of Tables ………………………………………………………………….x

Chapter 1 Introduction 1

1.1. Introduction …………………………………………………………………..1
1.2. Motivation …………………………………………………………………….2
1.3. Organization of the Thesis ………………………………………………...3

Chapter 2 Wideband Driver Amplifier 4

2.1. Feedback Topology ……………………………………………...……......5
2.2. Principles of Wideband Amplifier ……………………………….……...7
2.3. Principles of Noise ………………………………………………………...13
2.3.1. Thermal Noise ……………………………………………….……14
2.3.2. Shot Noise …………………………………………………………15
2.3.3. Flicker Noise ………………………………………………………15
2.3.4. Popcorn Noise ……………………………………………………16
2.4. Circuit Configuration …………………………………………………….18
2.5. Simulation and Measurement Results ………………………………..21
2.6. Summary …………………………………………………………………....29

Chapter 3 Power Amplifier 31

3.1. SiGe HBTs Technology ……………………………………………………32
3.2. Fundamentals of Power Amplifiers ……………………………………..34
3.2.1. Efficiency of Power Amplifiers …………………………………..35
3.2.2. Linearity of Power Amplifiers …………………………………....36
3.2.2.1. AM-AM and AM-PM Conversions ……………………...37
3.2.2.2. Adjacent Channel Power Ratio（ACPR）……………38
3.2.2.3. Spectral Mask ……………………………………………..38
3.2.2.4. Error Vector Magnitude（EVM）………………………..39
3.3. Overview of Classifications Power Amplifiers ……………………….41
3.3.1. Class A Power Amplifier …………………………………………..41
3.3.2. Class B Power Amplifier ………………………………………….42
3.3.3. Class AB Power Amplifier ………………………………………..44
3.3.4. Class C Power Amplifier ………………………………………….45
3.3.5. Class D Power Amplifier ………………………………………….46
3.3.6. Class E Power Amplifier ………………………………………….47
3.3.7. Class F Power Amplifier ………………………………………….48
3.4. The Design of SiGe Power Amplifier …………………………………50
3.4.1. The Active Device ………………………………………………….51
3.4.2. Operating Principle of Active Bias Linearizier Circuit ………53
3.4.3. Output Matching Network with Harmonic Termination ……..58
3.5. Simulation Results ………………………………………………………60
3.6. Measured Results ………………………………………………………..66

Chapter 4 Conclusion 68

References 70

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