臺灣博碩士論文加值系統

以矽原子摻雜barrier和以調變長well層溫度的條件來討論氮化銦鎵/氮化鎵多重量子井(InGaN/GaN multi-quantum wells)的結構特性和光學特性的研究，為了瞭解材料的結構特性，我們以高解析度X光繞射儀進行量測並分析其結果，在光學性質上，我們以光激螢光並且加以溫度的調變做探討

The improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well (MQW) structures have been investigated. The high-resolution X-ray diffraction (HR-XRD) indicated better interface properties in the MQWs for Si delta doping structures. The Arrhenius plots of the temperature-dependent photoluminescence (PL) spectra were used to reveal the enhancements of the radiative recombination. The activation energy was increased from 115 to 140 meV for the InGaN/GaN MQW sample with Si delta doping. The improvements of the thermal stability and activation energy were attributed to the supply of electrons from the Si delta doping barrier region into the InGaN well layer and the increase in hole capturing by the higher energy barrier in the valence band. Si delta doping process plays a crucial role in carrier recombination to significantly suppress carrier leakage, which not only increases the exciton confinement, but also improves the quantum efficiency.

目錄
指導校授推薦書
口試委員會審定書
授權書
中文摘要 i
英文摘要 ii
致謝 iv
目錄 v
第一章 緒論 1
1.1 前言 1
1.2 背景簡介 3
1.3 研究動機 3
1.4 論文架構 4
第二章 文獻回顧及相關原理 6
2.1 發光二極體的發光原理 6
2.2 氮化鎵發光二極體原理 10
2.3 活化能原理 14
2.4 量子效率 16
2.5氮化銦鎵的材料特性 17
第三章 樣品及量測糸統介紹 26
3.1實驗樣品結構 26
3.2 X-ray繞射分析儀原理及架構 30
3.3光激螢光光譜儀的原理及架構 33
第四章Si-doped barrier40 40
4.1 X-ray 繞射光譜分析圖 40
4.2變溫光激螢光光譜 42

第五章 應力釋放層結構 (SRL) 55
5.1 X-ray 繞射光譜分析圖 55
5.2變溫光激螢光光譜 56
第六章 結論 71
第七章 未來展望 72

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