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研究生:戴治強
研究生(外文):Chih-Chiang Tai
論文名稱:以氮化矽與氧化釓為感測薄膜的光定址電位感測器量測平台建立與特性分析
論文名稱(外文):The measurement platform and characteristics of light-addressable potentiometric sensor with silicon nitride and gadolinium oxide sensing membranes
指導教授:賴朝松
指導教授(外文):Chao-Sung Lai
學位類別:碩士
校院名稱:長庚大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:英文
論文頁數:49
中文關鍵詞:光定址電位感測器氮化矽氧化釓
外文關鍵詞:light-addressable potentiometric sensorsilicon nitridegadolinium oxide
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光定址電位感測器 (LAPS) 是一種場效應感測器,由於它的結構簡單且可應用範圍廣泛。因此LAPS 晶片密封夾具與其量測系統的架設在台灣首度被拿來做LAPS的相關研究,其中光源和感測薄膜在LAPS的性能和應用上占很重要的地位。本篇論文的主要目標就是希望能設計ㄧ擁有光源控制和訊號處理元件的輕便型16通道光定址電位感測器,以減小量測裝置的體積,並達成二維平面之 pH 感測系統。所有的元件由一自行設計製作的鐵氟龍容器所包覆在內。再搭配本實驗室瑞修同學用LabVIEW所寫的量測程式,達到容易操作及自動化量測的目的。
在生化感測器的應用上,選擇一個穩定且可靠度高的感測薄膜是非常重要的。氮化矽這個材料已被廣泛地應用在離子感測場效電晶體的 pH 感測層上,甚至應用在市售的產品上。因此選用Si3N4/SiO2-LAPS 和 Si3N4-LAPS 的結構來做感測特性的研究探討,並和本實驗室所做的EIS(electrolyte-insulator-silicon)結構做感測度上的比較。
為了得到更高的感測度,所以使用了高介電常數材料來作為感測薄膜。本論文使用氧化釓材料作為光定址電位感測器的感測薄膜,並利用快速退火之方式改善其感測特性。
The light-addressable potentiometric sensor (LAPS) is a field effect-based sensor with the advantages of simple structure and a wide range of possible applications. Therefore a LAPS chip holder and measurement setup was developed firstly in Taiwan to investigate the characteristics of LAPS with Si3N4 and Gd2O3. The performance and application of LAPS could be dominated by the light source and the sensitive membrane. To minimize the measurement setup and verify the possibility of 2-D pH sensing, a portable 16-channel LAPS with a light source control and a signal processing unit was developed. A LabVIEW-based program allows an easy and automatic measurement procedure. All hard- and softwares have been optimized with respect to the signal-to-noise ratio, stability, sensitivity and easy handling.
For biochemical sensor applications, the stable and reliable sensing membrane is necessary. Si3N4 has been widely used as the pH-sensitive layer in ISFET-based biosensors, even also in commercial product. Therefore, to investigate the measurement parameter setup, Si3N4/SiO2-LAPS and Si3N4-LAPS structures were fabricated.
For better pH sensing properties, gadolinium oxide for sensing insulator of LAPS was firstly investigated. Then, rapid thermal annealing (RTA) was used to improve the sensing properties.
Contents
致謝 i
摘要 ii
Abstract iii
Contents iv
Content of Figures vi
List of Tables viii

Chapter 1 Introduction…………………………………………………-1-
1.1 History and background of LAPS………………………-1-
1.2 Motivations……………………………………………-1-
1.3 The mechanism of LAPS………………………………-2-
1.4 Site binding model………………………………………-3-
Chapter 2 Measurement platform setup of LAPS…………………-13-
2.1 Introduction…………………………………………-13-
2.2 Experiments……………………………………………-13-
2.2.1 Sensor chip………………………………………-13-
2.2.2 Electronic units…………………………………-14-
2.2.3 Light source………………………………………-14-
2.2.4 LAPS Holder……………………………………-15-
2.2.5 DAQ card and LabVIEW………………………-16-
2.3 Results and Discussion…………………………………-16-
2.4 Summary……………………………………………-17-
Chapter 3 pH-sensing Properties of Silicon Nitride…………………-26-
3.1 Introduction……………………………………………-26-
3.2 Experiments……………………………………………-26-
3.3 Results and Discussion…………………………………-27-
3.4 Summary………………………………………………-28-
Chapter 4 pH-sensing Properties of Gadolinium Oxide……-36-
4.1 Introduction…………………………………………-36-
4.2 Experiments……………………………………………-36-
4.2.1 Reactive rf sputtering process……………………-36-
4.2.2 Gd2O3 sputter modification………………………-37-
4.2.3 LAPS structure process…………………………-38-
4.3 Results and Discussion…………………………………-39-
4.4 Summary………………………………………………-39-
Chapter 5 Conclusions and Future Works……………………………-48-
5.1 Conclusions……………………………………………-48-
5.2 Future works……………………………………………-48-
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