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研究生:汪美里
研究生(外文):Mei Lee Wang
論文名稱:相位偏移光罩在先進動態記憶體之研究
論文名稱(外文):Study of Phase Shifting Mask for advanced DRAM applications
指導教授:高泉豪
指導教授(外文):Chyuan Haur Kao
學位類別:碩士
校院名稱:長庚大學
系所名稱:半導體產業研發碩士專班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:88
中文關鍵詞:相位偏移光罩二元強度光罩雷文生-涉谷型光罩嵌入式減光型像移光罩
外文關鍵詞:Phase Shifting MaskEA-PSMAlt-PSMCOG
相關次數:
  • 被引用被引用:1
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  • 收藏至我的研究室書目清單書目收藏:0
對於微影技術須要考慮數值孔徑(NA)和製程參數(k1)值,當製程參數(k1)值越小可以得到的線寬越小,由於製程參數(k1)的最小物理極限值是0.25,在使用現有微影設備,希望更好的微影光罩技術去得到0.3以下的k1值;因此利用像移光罩和偏軸發光以得到更小的製程參數(k1)值。而當數值孔徑越大可以得到的線寬越小,由於應用乾式系統 (NA<1),已無法得到48奈米的線寬,因此需要改變製程設備去得到更小的線寬,而使用濕浸式系統(NA>1)的製造技術使數值孔徑能接近1.3。因為數值孔徑越大焦深(DOF)就越小,所以當製程參數(k1)值越小,數值孔徑就可以不需太大。
本實驗並使用PROLITH軟體去模擬,應用65奈米嵌附式減光型像移光罩穿透率 6% 和 15%,各別再分為有極化和沒有極化兩種型式,曝光顯影得到焦深和製程寬容度。利用65奈米的技術證得實際數據和模擬數據的趨勢和特性;把結果套用在48奈米。在48奈米針對嵌入式減光型像移光罩(EA-PSM)、雷文生-涉谷型光罩(Alt-PSM)和二元強度光罩(COG) 做模擬,探討何種光罩可以為下一個微影世代所使用。
The two important factors, NA and k1, were considered in photolithography. The smaller k1, the smaller half pitch, the physical limit of k1 is 0.25. Don’t change present photography equipment, developing better mask technology is to obtain small k1 value belong 0.3. Therefore, phase shift mask and OAI illumination were used to obtain small k1 value. It’s well known that increasing NA can obtain small half pitch. It’s hard to get 48nm linewidth by dry photolithography system with small NA (NA<1). The advanced immersion system with large NA (NA>1) about 1.3 is used to obtain smaller half hatch and smaller DOF.
Our study used the PROLITH software tool to simulation the characteristics of 65nm EA-PSM mask with transmission 6% and 15%, with and without polarization.
We also would like to obtain better result of 65nm simulation applied on 48nmsimulation. Furthermore, compared with different masks (EA-PSM, Alt-PSM, COG ) in 48nm simulation. It’s expected to find optimum mask process for next generation application.
目錄
致謝
中文摘要
英文摘要
目錄
圖目錄
第一章 序論…………………………………………………………….01
1-1 前言……………………………………………………………..01
1-2 研究動機與目的………………………………………………..05
1-3 研究內容………………………………………………………..06
第二章 光學微影序論………………………………………………….09
2-1 前言……………………………………………………………09
2-2 光罩的簡介……………………………………………………10
2-3解像度增進技術………………………………………………..13
2-4 微影參數………………………………………………………18
第三章45奈米到70奈米的模擬……………………………………….24
3-1前言……………………………………………………………..24
3-2 應用乾式系統去模擬和曝光顯影……………………………25
3-3 應用濕浸式系統去模擬和曝光顯影…………………………26
第四章 模擬48奈米最佳化的情況 …………………………………..43
4-1前言……………………………………………………………..43
4-2模擬嵌入式減光型相移光罩…………………………………..44
4-3 模擬嵌入式減光型相移光罩(高穿透率)……………………..47
4-4 模擬二元強度光罩……………………………………………50
4-5 模擬雷文生-涉谷型光罩……………………………………...52
第五章總結及未來展望………………………………………………...83
5-1 結論……………………………………………………………83
5-2 未來展望………………………………………………………84
參考文獻………………………………………………………………...85
參考文獻
[1] 半導體微影技術龍文安 着
[2] ULSI TECHNOLOGY C.Y. CHANG and S.M. SZE
[3]INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 2005 EDITION
[4] Bernd Geh, Donis G. Flagello, Chris Progler, Patrick M. Martin, Leonardus H.A. Leunissen, Steve Hansen, Wim de Boeij, “The impact of mask birefringence on Hyper-NA (NA>1.0) Polarized Imaging”Proc. of SPIE Vol. 5992, 599210, (2005)
[5] Burn J. Lin “Immersion lithography and its impact on semiconductor manufacturing”JM3 3(3) 337-395 (July 2004)
[6] Burn J. Lin “The k3 coefficient in nonparaxial λ/NA scaling equations for resolution, depth of focus, and immersion lithography”JM3 1(1) 7-12(April 2002)
[7] Matrin Drapeau, Paul.J.M. van Adrichem, Lieve van Look, Bryan S. Kasprowicz “A Practical Alternating PSM Modeling And OPC Approach To Deal With 3D Mask Effects For The 65nm Node And Beyond”Proc. of SPIE Vol. 5992, 59921T, (2005)
[8] Yu Ya Chang, Yuan-Hsun Wu, Chiang-Lin Shih, Jengping Lin “Effects of Mask Bias on the Mask Error Enhancement Factor (MEEF) for Low k1 lithography process”Proceedings of SPIE Vol. 5853 (SPIE, Bellingham, WA, 2005)


[9] Byung-Cheol Cha, Seong-Yoon Kim, Soon-Ho Kim, Sang-Young Yu, Chan-UK Jeon, Hee-Sun Yoon and Woo-Sung Han “Analysis of in-field uniformity on wafer considering exposure margin and MEEF” Proceedings of SPIE Vol. 5567 (SPIE, Bellingham, WA, 2004)
[10] Youske Kojima, Toshio Konishi, Jun Sasaki, Keishi Tanaka, Toru Komizo, Motohiko Morita, Masanori Shirasaki, Takashi Ohshima, Hiroyuki Takahashi, Kazuaki Chiba, Masao Otaki and Yoshimitsu Okuda “Study of Alternating Phase-Shift Mask structure for ArF lithography” Proceedings of SPIE Vol. 5446 (SPIE, Bellingham, WA, 2004)
[11] Takashi Adachi, Kei Mesuda, Nobuhito Toyama, Tasutaka Morikawa, Hiroshi Mohri and Naoya Hayashi “Optimization of Alt-PSM structure for 45nm node ArF immersion lithography” Proc. of SPIE Vol. 5992, 599238, (2005)
[12] Hiroyuki Iso, Noriyuki Harashima, Tatsuya Isozaki, Shuichiro Kanai, and Takaei Sasaki “New Structure of ArF Transmittance att. Phase Shifting Mask with Dry Etching Process” Proceedings of SPIE Vol. 5567 (SPIE, Bellingham, WA, 2004)
[13] Chirs Mack’s Lithography Expert “Using the Normalized Image Log-Slope”Reprinted from February 2001 edition of MICROLITHGRAPHY WORLD, Copyright 2001 by Pennwell Corporation.
[14] Kazuya Iwase, Ken Ozawa, and Fumikatsu Uesawa “Mask Specifications for 45-nm node:The Impact of Immersion Lithography and Polarized Light Imaging” Proc. of SPIE Bellingham, WA, 98227-0010 USA DECEMBER 2006
[15] Bernd Geh, Donis G. Flagello, Chirs Progler, Patrick M. Martin, Leonardus H. A. Leunissen, Steve Hansen, Wim de Boeij “The impact of mask birefringence on Hyper-NA (NA>1.0) Polarized Imaging” Proc. of SPIE Vol. 5992, 599210, (2005)
[16] Chui Fu Chiu, Chih Li Chen, Jenn Wei Lee, Wen Bin Wu, Chiang Lin Shih, Feng Yi Chen, Jeng Ping Lin “Verification of High Transmittance PSM with Polarization at 193nm high NA system” Proc. of SPIE
[17] Bruce W. Smith, Lena Zavyalova, Andrew Estroff “Benefiting from polarization-effects on high-NA imaging” Proceedings of SPIE Vol. 5377 (SPIE, Bellingham, WA, 2004)
[18] Burn J. Lin “Simulation of optical projection with polarization-dependent stray light to explore the difference between dry and immersion lithography” JM3 3(1) 9-20 (January 2004)
[19] Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri and Naoya Hayashi “45-32nm node photomask technology with water immersion lithography” Proc. of SPIE Vol. 6349, 63493J, (2006)
[20] 吳奇隆,「Study of Optical Characteristics of Materials for Advanced Lithography」,國立清華大學,工程與系統科學研究所,碩士論文,2004




[21] 林政旻,「Study of Normal and High Transmittance
Embedded Materials, and Simulation of Applcation of Attenuated Phase-Shifting Mask for 193 nm Lithography」,國立交通大學,應用化學研究所,博士論文,2001
[22] 呂建鋒,「MgO/Cr2O3多層膜於衰減相移式光罩之研究」,大同大學,材料工程研究所,碩士論文,2000
[23] 林重仁,「Al2O3-ZrO2-SiO2複合膜應用於193奈米之衰減式相移光罩之光特性研究」,大同大學,材料工程研究所,碩士論文,2002
[24] Dai; Chang-Ming (Hsinchu, TW), Chang; Chang-Hsing (Hsin-Chu, TW), You; Jan-Wen (Jungli, TW), Lin; Burn J. (Hsinchu, TW) “Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era” Appl. No: 10/782,670, Filed: February 19, 2004
[24] http://cbme.mc.ntu.edu.tw/IBMELab/EP3/ep3.1.htm
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