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研究生:陳敬文
研究生(外文):CHIN CHEN WEN
論文名稱:蘭克賽單晶晶體的生長、結構與特性
論文名稱(外文):Growth,Structure and Characteristic of Langasite Single Crystals
指導教授:洪正聰洪正聰引用關係
學位類別:碩士
校院名稱:中華技術學院
系所名稱:電子工程研究所碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:75
中文關鍵詞:蘭克賽
外文關鍵詞:Langasite
相關次數:
  • 被引用被引用:2
  • 點閱點閱:170
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本研究論文中,我們採用俄羅斯VNIISIMS公司的Kristall-3M長晶系統。以柴克洛斯基法(Czochralski Method)成功地製造出台灣第一顆由學術單位成長之高品質的蘭克賽La3Ga5SiO14 (LGS)單晶晶體。LGS化合物具有高的壓電耦合係數、溫度補償及低的聲波損失等特性。
在充滿氬氣的晶體生長過程中加入了3%氧氣,拉桿轉速6 rpm,生長速度在2.1 ~ 2.6 mm/hr之間,2階段的退火歷時1200分鐘。完成的晶體長為85 mm,直徑35 mm,重量540 g。磨成粉末後我們使用X光粉末繞射儀及拉曼光譜儀分析晶體結構。
與X光繞射的標準索引卡(ICDD)比較,晶體結構受生長時的溫場條件、生長速率及退火控制等因素影響相當明顯。從晶體的[0001]方向量測所得到的拉曼光譜與理論上的振動模並不完全相同,推測LGS晶體結構雖然完整,但尚有部分錯位缺陷存在。

關鍵字:柴克洛斯基法、蘭克賽
In this research paper, we use Russian VNIISIMS Corporation's Kristall-3M crystal grower, designed with Czochralski Method , and a high quality of La3Ga5SiO14 (LGS) single crystal has been made first at Taiwan. The LGS compound has high piezoelectric coupling coefficient , temperature compensation and low acoustic loss.
In the process of crystal growing, we filled the argon and 3% oxygen. The rotational speed of pulling rod is 6 rpm, and the crystal grow with the speed 2.1 ~ 2.6 mm/hr. The length of ingot is 85 mm, and it’s diameter is 35 mm, it’s weight is 540 g. We use X-ray powder diffraction and the Raman scattering to find some characteristic of the crystal.
As Compared with X diffraction's data (ICDD), it shows that the crystal structure is effected obviously by heat field condition, growth rate and annealing. The Raman spectrum obtained from the [0001] direction shows that the LGS single crystal exist some dislocation.

Keywords:Czochralski Method , Langasite
中文摘要 i
英文摘要 ii
目次 iii
表圖目錄 v
第一章 緒論 1
第一節 文獻回顧 1
第二節 壓電晶體的簡介與應用 3
第二章 蘭克賽的性質與生長 5
第二節 生長單晶的方法 9
第三節 CZ法單晶生長 15
第三章 長晶系統與實驗流程. 26
第一節 長晶系統 26
壹、電源 26
貳、冷卻系統 27
参、控制面盤 29
肆、長晶爐 31
伍、加熱線圈 33
陸、晶桿 33
柒、晶種 34
捌、拉升裝置 35
玖、底座裝置 36
拾、坩堝 36
第二節 實驗流程 38
壹、材料備製 38
貳、晶體生長 39
第四章 量測設備與分析結果 48
第一節 XRD-6000簡介 48
第二節 粉末繞射分析 50
壹、X光的發現 50
貳、X光的產生 51
参、X光管 52
肆、布拉格(W. L. Bragg)定律 52
伍、X光繞射方法 54
陸、實驗繞射結果 54
第三節 RAMAN光譜 57
壹、RAMAN光譜的原理 59
貳、晶體中的分子光譜 59
参、 RAMAN光譜儀 60
肆、光譜分析 61
第四節 晶體表面分析 63
第五章 結論與展望 65
參考文獻 69
附錄 作者簡介 76
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