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研究生:吳怡宗
研究生(外文):Tsung-I Wu
論文名稱:850奈米面射型雷射製程及元件特性之研究
論文名稱(外文):Study of Fabrication Technology and Characteristics of 850nm Vertical Cavity Surface Emitting Laser
指導教授:洪榮木賴芳儀賴芳儀引用關係
指導教授(外文):Jung-Mu HungFang-I Lai
學位類別:碩士
校院名稱:清雲科技大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:94
語文別:中文
論文頁數:56
中文關鍵詞:面射型製程元件特性雷射
外文關鍵詞:VCSELOxideImplant
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本論文中主要是研製850nm垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser, VCSEL),是由上下布拉格反射鏡(Distributed Bragg Reflector) P-DBR 21 pair與 N-DBR 40pair,加上多層量子井做為主動層所組成,經由共振腔的方式產生垂直磊晶方向出光的雷射光,與邊射型雷射相較下,此種雷射具有圓形對稱的發光圖形、光束發散角較小,良好的溫度特性與極低的臨界電流,而且製作方式與量測方式較簡易,並可製作成二維矩陣,這些特性使其非常適合用於光纖通訊及一些消費性光電產品上。本論文探討利用不同的製程方式,比較其製程難易及穩定度,並研究不同製程方法下的元件特性,如:光電特性、光束的發散角度、溫度特性與發光模態。本論文所探討的製程方式有:(1)水氣氧化法;(2)離植佈值法;(3)水氣氧法化加離植佈值等三種製程方式。本論文的實驗結果以第三種方式:水氣氧化法加離子佈值,可得到較佳的元件特性,溫度表現從室溫燒測至90℃,操作電流增加不到1mA,並有極小的光發散角度7°,而且在光膜態特性可得到19dB的主/側模比。
The 850nm vertical cavity surface emitting laser (VCSEL) was investigated in this thesis. It is consisted of top and bottom DBR (Distributed Bragg Reflector) and multi-quantum wells (MQWs) micro-resonant-cavity. The output light is emitting from the lower reflectivity of DBR by the resonance effect in the micro-cavity. Comparison with edge emitting laser (ELD), VCSEL have the performances of circle and symmetrical light, low divergent angle, good temperature characteristics, low threshold current, easy process, on wafer measurement and application on 2D array. These good performances make VCSEL very suitable for optical-fiber communications and some consumptive electronic products. In this thesis, different processes were employed to investigate the VCSEL characteristics. By comparison, different processes make different characteristics of the VCSEL devices such as photo I-V (Light-current-voltage) characteristic, light divergent angle, temperature characteristics and the analysis of light mode were investigated. Three different processes were employed to investigate the VCSEL characteristic: (1) Vapor oxidation (2) Ion implantation (3) Vapor oxidation mixed Ion implantation. The experimental results show the vapor oxidation mixed ion implantation process obtained the best performances of VCSEL devices. The temperature characteristics is the increasing of operation current is lower than 1 mA when the device was burn-in at 90℃. The very small divergent angle of 7° and a light main mode with side mode ratio of 19 dB was obtained.
中文摘要…………………………………i
英文摘要…………………………………ii
誌謝………………………………………iii
目錄………………………………………iv
表目錄……………………………………vi
圖目錄……………………………………vii
第一章 簡介………………………………1
第二章 VCSEL基本理論…………………5
2-1 VCSEL原理…………………………5
2-2結構與量測方法…………………………………8
2-2-1結構分析……………………………8
2-2-2反射率及波長波長量測……………11
2-2-3光電特性量測………………………………13
第三章 VCSEL 元件製作………………………………15
3-1水氣氧化法………………………………………15
3-1-1系統架構…………………15
3-1-2製程步驟…………………17
3-1-3量測結果…………………20
3-2離植佈值法……………………………21
3-2-1模擬分析…………………22
3-2-2製程步驟…………………23
3-2-3量測結果…………………27
3-3離植佈值加水氣氧化法………………28
3-3-1製程步驟…………………28
3-3-2量測結果………………………………33
第四章 結果與討論…………………………………………34
第五章 結論…………………………………………………42
參考文獻……………………………………………………43
簡歷…………………………………………………………45
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