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研究生:陳英仁
研究生(外文):Ying-Ren Chen
論文名稱:利用液相沈積法及免蝕刻製程高良率、高靈敏度奈米碳管水溶液離子濃度感測器
論文名稱(外文):High Yield, High Sensitivity Aqueous Solution Ion Concentration Single-Walled Carbon Nanotubes Sensor Formed by Etching-Free Liquid Phase Deposition Silicon Oxide and Lift off Processes
指導教授:魏拯華
指導教授(外文):Jeng-Hua Wei
學位類別:碩士
校院名稱:清雲科技大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:94
語文別:中文
論文頁數:54
中文關鍵詞:雙閘極奈米碳管電晶體液相沈積
外文關鍵詞:Double gate CNTFETLiquid Phase Deposition
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首先我們利用雙閘極奈米碳管電晶體結構來了解其傳輸特性,並且利用簡易式Back-gate CNTFET結構相關基本技術來製作CNT sensor。接著,我們利用一個新的覆蓋層成長方法來製造奈米碳管水溶液離子濃度感測器。使用了選擇性液相沈積法及掀起的方式定義出感測口及上氧化層的部份。使用液相沈積法及掀起的方式,可以避免蝕度感測口時破壞奈米碳管通道。我們量測DI-water及氯化鈉(NaCl)離子濃度在不同偏壓之下。由上述可知,利用液相沈積法及掀起方式能夠應用在高靈敏度離子、化學及生物奈米碳管感測器。
First we use double gate CNTFET structure to understand the conduction characteristics and use simple back-gate CNTFET structure the basic technology as CNT sensor. Next, we use new method to grow top passivation fabricate an aqueous solution ion concentration carbon nanotubes (CNTs) sensor. The top passivation insulator and sensor window of CNT sensor were formed a unique, selective grown Liquid Phase Deposition (LPD) silicon oxide and lift off processes. Using this LPD process and lift off process, enable avoided CNTs channel destroyed by the etched sensor window. We measured drain current for CNTs exposed to both the distilled water and aqueous solution (NaCl) under different gate bias. The above result demonstrated that the CNTFET formed by selective LPD deposition plus lift off process had the capability for the application on highly sensitive ion/chemical/biological sensors.
中文摘要………………………………………………………………………………… i
英文摘要………………………………………………………………………………… ii
誌謝……………………………………………………………………………………… iii
目錄……………………………………………………………………………………… iv
表目錄…………………………………………………………………………………… v
圖目錄…………………………………………………………………………………… vi
第一章 緒論…………………………………………………………………………… 1
1.1 研究背景………………………………………………………………… 1
1.2 奈米碳管介紹…………………………………………………………… 3
1.3 論文架構………………………………………………………………… 10
第二章 元件結構與製程步驟………………………………………………………… 11
2.1 元件結構………………………………………………………………… 11
2.2 製程步驟………………………………………………………………… 11
2.3 奈米碳管的塗佈………………………………………………………… 16
2.4 量測儀器與分析………………………………………………………… 16
第三章 雙閘極元件量測結果與討論………………………………………………… 17
3.1 雙閘極電晶體元件之製作與測試……………………………………… 17
3.2小結………………………………………………………………………… 32
第四章 感測器元件量測結果與討論…………………………………………… 33
4.1未成長Sensor hole sensor solution test………………………………… 36
4.2成長Sensor hole solution test……………………………………………… 45
4.3 小結………………………………………………………………………… 50
第五章 總結…………………………………………………………………………… 51
5.1 結論………………………………………………………………………… 51
參考文獻………………………………………………………………………………… 52
簡歷……………………………………………………………………………………… 54
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