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研究生:李岳穆
研究生(外文):Yueh-Mu Lee
論文名稱:在矽基板上研製砷化鎵太陽能電池
論文名稱(外文):Fabrication of GaAs Solar Cells on Silicon Substrates
指導教授:蕭宏彬
指導教授(外文):Hung-Pin Shiao
學位類別:碩士
校院名稱:大葉大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:41
中文關鍵詞:砷化鎵太陽能電池再結晶
外文關鍵詞:GaAsSolar cellGeRecrystallization
相關次數:
  • 被引用被引用:2
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  • 收藏至我的研究室書目清單書目收藏:0
和矽太陽電池相比,在單晶砷化鎵基板上成長單接面(Single-junction)砷化鎵(GaAs)太陽能電池和多接面(Multi-junction)磷化銦鎵/砷化鎵(InGaP/GaAs)太陽能電池,在AM1.5下,效率分別可達到25.7%和29.5%。磷化銦鎵/砷化鎵/鍺(InGaP/GaAs/Ge)三接面太陽能電池效率更可達到40%。雖然如此,這些太陽能電池要應用於地表上的光電系統,成本仍需降低。而製造砷化鎵太陽能電池其成本來自於單晶砷 化鎵或鍺基板及需要利用磊晶技術。
本論文以便宜的材料矽做為基板。為了要在矽基板上成長砷化鎵太陽能電池,故將非晶鍺薄膜沉積在矽基板表面。然後藉著熱退火製程,使非晶鍺膜再結晶(Re-crystallized)。最後,將砷化鎵太陽能電池結構成長在具有多晶鍺膜的矽基板上。
Compared with silicon solar cell, single junction GaAs and multi-junction InGaP/GaAs solar cell grown on single-crystal GaAs substrates have achieved record efficiency of 25.7% and 29.5%, respectively, under AM1.5 illumination. 40% of efficiency has been achieved on InGaP/GaAs/Ge triple-junction solar cells. Even so, a signification cost reduction is needed for application of these solar cells to terrestrial photovoltaic systems. The cost for the manufacture of GaAs based solar cell can be attributed to the usage of single-crystal GaAs or Ge substrates and the utilization of epitaxy technology.
In the thesis, a cheap material, silicon, was adopted as substrates. In order to use Si substrates for the growth of GaAs solar cells, an amorphous Ge film was deposited on Si substrate surface. Then, the amorphous Ge film was re-crystallized by a thermal annealing process. Finally, GaAs solar cell structure was grown on the poly-crystalline Ge film/Si substrates.
封面內頁
簽名頁
授權書.........................iii
中文摘要........................iv
英文摘要........................v
誌謝..........................vi
目錄..........................vii
圖目錄.........................ix
表目錄.........................xi

第一章 序論......................1
1.1 前言....................1
1.2矽和砷化鎵太陽能電池比較.........1
1.3砷化鎵的優缺點..............3
1.4 研究動機.................4
第二章 薄膜再結晶與太陽能電池原理...........6
2.1 緩衝層...................6
2.2 薄膜再結晶.................8
2.3 有機金屬氣相磊晶..............9
2.4 太陽能電池原理..............10
2.5 背面場效.................16
第三章 元件製程與量測.................17
3.1 試片清洗.................17
3.2 固相結晶製程...............18
3.3 砷化鎵太陽能電池製程...........20
3.4 元件製程步驟................21
3.5 量子效率量測................24
3.6矽基板上成長砷化鎵太陽能電池.......25
第四章 結果與討論...................26
4.1 XRD量測分析..............26
4.2太陽能電池量子效率量測..........30
4.3 太陽能電池光電特性量測..........31
4.4再結晶基板成長砷化鎵太陽能電池的困難...36
第五章 結論......................38
參考文獻........................39
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