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研究生:范振區
研究生(外文):Zhen-Qu Fan
論文名稱:矽和砷化鎵太陽能電池元件參數量測與特性分析
論文名稱(外文):Measurement and Analysis of Si and GaAs Solar cell Device Parameters
指導教授:蕭宏彬
指導教授(外文):Hung-Pin Shiao
學位類別:碩士
校院名稱:大葉大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:37
中文關鍵詞:量子效率開路電流電壓衰退
外文關鍵詞:internal quantum efficiencyopen circuit voltage decay
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本論文主要是著重於建立量測太陽電池參數的方法。太陽電池的基本結構是一個p-n接面二極體。入射光子被太陽電池吸收後產生電子電洞對,少數載子經由擴散的方式到達空乏區,在空乏區內經由內建電場作用到達電極兩端。對轉換效率而言,較長的少數載子生命期應該會有足夠的擴散長度到達空乏區邊緣。所以我們可以瞭解到太陽電池是取決於少數載子生命期的元件。為了要瞭解太陽電池的少數載子在半導體材料內部的特性,我們必須量測和評估。在這方面,我們建立表面光壓技術,內部量子效率方式和開路電壓衰退量測技術來定義少數載子在不同溫度下的擴散長度或生命期。這可以分析轉換效率和載子生命期或擴散長度彼此之間的關係。
The aim of the thesis is to build various measurements and characterize the device parameters of solar cells. The basic structure of a solar cell is a p-n junction diode. The electron-hole pairs generated by absorption of the incident light will diffuse toward the depletion region and then are swept through depletion region by the built-in electric field. For high efficiency, the lifetime of minority carriers shall be long enough to diffuse and arrive at the edge of the depletion region. So, we can understand the solar cells belong to the minority carrier dominated devices. In order to understand the performance of solar cells, the characteristics of minority carriers in semiconductor material have to be measured and evaluated. In this work, surface photovoltaic technique, internal quantum efficiency method and open-circuit voltage decay technique were installed and developed to characterize the diffusion length or lifetime of minority carriers at various temperatures. On the other hand, both conversion efficiency and ideality factor were measured at various temperatures. The relationships between conversion efficiency and carrier lifetime or diffusion length were analyzed.
封面內頁
簽名頁
授權書.........................iii
中文摘要........................iv
英文摘要........................v
誌謝..........................vi
目錄..........................vii
圖目錄.........................ix
表目錄.........................xi

第一章 序論......................1
1.1 前言....................1
1.2研究背景與動機...............2
第二章太陽能電池之概況.. .......4
2.1 太陽電池的種類和材料............4
2.2 太陽光譜和air mass..............7
2.3 太陽電池的工作原理.............9
2.4太陽電池等效電路和參數...........10
第三章 實驗理論與量測方法...............14
3.1量子效率量測法...............14
3.2開路電壓衰退量測法.............17
第四章 實驗結果與討論.................20
4.1使用試片...............20
4.2量子效率量測...............20
4.3開路電壓衰退量測............24
4.4 I-V曲線的量測.............28
第五章 結論....................34
參考文獻........................35
[1] 莊嘉琛,“太陽能工程(太陽電池篇)”,全華科技圖書股份有限公司.
[2] M. P. Deshmukh, R. A. Kumar, and J. Nagaraju, “Measurement of solar cell ac parameters using the time domain technique, ”Americal Institute of Physics, 75. , pp.2732-2735(2004)
[3] M .P . Deshmukh, J. Nagaraju, “Measurement of silicon and GaAs/Ge solar cell device parameters,” Solar Energy Materials & Solar Cells,89. , pp.403-408(2005).
[4] J.E.Mahan, T.W. Ekstedt, R. I. FRANK,and R. Kaplow, “Measurement of Minority Crrier Lifetime in Solar Cells from Photo-Induced Open-Circuit Voltage Decay, ” IEEE Transactions On Electron Devices, 26, pp.733-739(1979).
[5] M .P. Deshmukh, J. Nagaraju, “Measurement of silicon and GaAs/Ge solar cells ac parameters, ”Solar Energy,78. , pp.1-4(2005)..
[6] Hans J. Moller, “Semiconductors for Solar cells”, Artech House Publishers ,1993.
[7] S. M. Sze, “Physics of Semiconductor Drvices 2nd Edition”,Published and Reprinted by CENTRAL BOOK COMPANY,Second printing,1985.
[8] J. M. Zhu, W. Z. Shen, Y. H. Zhang, H. F. W. Dekkers, “Determination of effective diffusion length and saturation current density in silicon solar cells”, Physica B,355. , pp.408-416(2005).
[9] J. H. Reiss, R. R. King, K. W. Mitchell, “Characterization of diffusion length degradation in Czochralski silicon solar cells”,Appl. Phys. Lett68. , pp.3302-3304(1996).
[10] Takashi Fuyuki, Hayato Kondo, Tsutomu Yamazaki, Yu Takahashi, Yukiharu Uraoka, “Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence”, Appl. Phys. Lett86. , pp. 262108, (2005).
[12] 施敏, 黃調元, “半導體元件物理與製作技術(第二版) ”, 國立交通大學出版社,pp.180(2002).
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