隨著科技進步，電子元件也來到奈米世代，當元件縮小至一定尺寸時會因為元件縮小而有短通道效應，淺接面製程是用來解決短通道效應所帶來的問題之一，然而降低源極、汲極的接面深度也會使得電阻上升，因此需在淺接面上覆蓋一層金屬矽化物以降低電阻，鎳矽化物有低電阻率、低矽消耗量是目前最具潛力的材料。本實驗利用化學浸漬法在p-type矽晶片上直接沈積鎳，有別於一般傳統的敏化(sensitization)活化(activation)製程，並可在矽/二氧化矽之間選擇性沈積。在實驗中利用前處理、除氧及各種不同錯化劑改善其沈積品質，發現以酒精前處理並在氨水錯化劑及低溶氧條件下，有最佳鍍膜沈積。利用在鍍浴中添加次磷酸鈉可獲得鎳磷膜，在氬氣氣氛經過600℃快速退火處理30秒，可獲得最低電阻率之矽化鎳(26 μΩ．cm)，且同時形成n+/p接面，其中接面磷濃度達 2 × 1018 atoms/cm3。

Development of devices from micro scale to nano scale incur some problems such as short-channel effect. Shallow junction process is one way of solving the deficiency. But as the depth of source/drain decreases, the resistance of source/drain increases. In order to reduce resistance of source/drain, we must cap a metal-silicide which possesses low resistivity on it. Nickel silicide has properties as lower resistivity, and lower silicon consumption. We used chemical immersion to deposit nickel on p-type silicon which is quiet different from traditional method of sensitization and activation. This method has selective deposition between silicon and silicon dioxide. We used several kinds of operating conditions to determine the optimal deposition of nickel. Pretreatment of silicon substrates by ethanol, followed by displacement of silicon with nickel-ammonia complex containing and low dissolved-oxygen content bath is a suitable process. Nickel-phosphorous deposition could be obtained if sodium hypophosphite is added to the displacement bath. The post-treatment by heating sample to 600℃ under argon atmosphere could lead to the formations of NiSi phase (ρ=26 μΩ．cm) and n+/p junction (2 x 1018 P atoms/cm3) simultaneously.

圖目錄............................................V
表目錄............................................VI
第一章 前言 .......................................1
1.1 MOSFET ..........................................1
1.2 自我對準矽化物 ..................................3
1.3 常用金屬矽化物...................................5
1.3.1 矽化鈦.......................................7
1.3.2 矽化鈷.......................................8
1.3.3 矽化鎳 .....................................10
1.4 沈積金屬製程....................................13
1.4.1 物理氣象沈積法 .............................13
1.4.2 化學氣象沈積法..............................14

1.4.3 化學催化鍍法................................15
1.5 研究動機........................................15
第二章 文獻回顧及原理..................................17
2.1 無電鍍鎳........................................17
2.1.1 鍍浴組成 ...................................17
2.1.2 無電鍍前處理................................17
2.2 形成金屬矽化物之熱處理條件......................22
2.3 ITM製程.........................................25
2.4 重要文獻回顧....................................26
2.5 儀器原理........................................28
2.5.1 場發射電子顯微鏡............................28
2.5.2 低掠角XRD...................................29
2.5.3 二次離子質譜儀..............................30
2.5.4 四點探針....................................32
2.5.5 感應耦合電漿原子發射光譜分析...............34
第三章 實驗步驟與流程.................................35
3.1 實驗藥品.........................................35
3.2 矽晶片置換鎳.....................................36
3.3 實驗步驟.........................................38
3.3.1不同溶氧條件下的矽晶片鎳置換...............38
3.3.2不同錯化劑的鎳置換反應....................41
3.3.3前處對置換鎳之影響...........................43
3.3.4矽晶片置換鎳磷...............................44
3.4實驗裝置示意圖....................................45
3.5 實驗流程..........................................46
3.5.1矽晶片置換鎳製程..............................46
3.5.2矽晶片置換鎳/磷流程...........................47
第四章 結果與討論.....................................48
4.1 不同溶氧下的矽晶片鎳置換..........................48
4.2 不同錯化劑下的鎳置換..............................56
4.3 前處理對於矽晶片鎳置換之影響......................59
4.4 矽晶片置換鎳/磷...................................67
4.5 矽晶片置換鎳/磷經熱處理之物性分析.................77
4.6 矽晶片置換鎳/磷經熱處理之電性分析.................95
第五章 結論............................................98
參考文獻 .............................................100

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