臺灣博碩士論文加值系統

金屬氧化物變阻器(Metal Oxide Varistor, MOV)，又稱突波吸收器，是一種會隨著電壓值不同而改變電阻值的變阻器。就一般情況來說，幾乎所有需要穩壓的電子產品均會使用到變阻器，整個應用面包括通訊設備、半導體保護、電力傳輸系統、控制系統等相關電子產品內部電路中。而MOV隨著長時間的使用及不斷地閉合與開啟，其功能將會受損，輕則儀器設備受損，嚴重則會影響整體系統之運作。因此，如何預知MOV之衰老與損壞，適時地給予預防與保護，使設備與系統免受突波之侵襲與損壞，則是本論文研究之動機。
本論文主要是利用MOV導通狀態時，流經其電流之大小，以設計與製作一個可顯示變阻器使用次數之檢測系統。藉此檢測系統告知使用者更換變阻器之時機，以預防變阻器因為功能降低無法達到抑制突波效果之缺點。又由於MOV老化後會影響其工作效能，導致系統突波防護功能降低。本論文針對此一現象，建立老化MOV模組，並利用系統模擬與實測波形做比較，實驗結果皆驗證本論文模組建立之可行性與真實性。

Metal oxide varistor, also known as surge absorber, is a varistor with the resistance changing with the voltage. So generally speaking, almost all products will require the use of electronic stabilizing rheostat, such as communications equipment, semiconductor protection, the power transmission system, internal control systems and other related electronic circuits. Due to the frequently switching for a long period usage, the functions of MOV components will be expectably impaired or damaged. This situation may be a serious impact on the operation of the overall system. Therefore, how to predict MOV''s aging phenomenon and damage, will be the major topic of this thesis.
The main purpose of this thesis is to design a detection circuit to counter the times of the MOV being struck. The detection circuit also includes a LED display which can show the number of MOV being attacked. Since the aging phenomenon of the MOV could reduce the performance of whole system operation. Thus, an aging MOV model will be designed in this thesis. The simulations for both normal MOV and aging MOV models are analyzed and compared in this thesis. The simulation results show the compliance with the experimental results of MOV test.

中文摘要..................................................i
Abstract.................................................ii
誌謝....................................................iii
目錄.....................................................iv
圖目錄..................................................vii
表目錄....................................................x
第一章 緒論...............................................1
1.1 研究背景與動機...................................1
1.2 文獻探討..........................................4
1.3 論文貢獻..........................................5
1.4 論文架構..........................................6
第二章 突波抑制元件之介紹.................................8
2.1 暫態突波抑制元件種類..............................8
2.1.1 火花間隙....................................9
2.1.2 突波抑制器.................................12
2.1.3 濾波器.....................................14
2.1.4 聚合開關...................................16
2.1.5 金屬氧化物變阻器...........................17
2.1.6 齊納變阻器.................................18
2.2 金屬氧化物變阻器之原理...........................20
2.2.1 MOV內部構造................................21
2.2.2 MOV之V-I特性曲線...........................24
第三章 金屬氧化物變阻器檢測電路之分析....................31
3.1 MOV檢測電路之設計................................33
3.2 MOV檢測電路之架構................................34
3.2.1 MOV測試電路................................34
3.2.2 電流感測器放大電路之設計...................36
3.2.2.1 電流感測器之基本原理................36
3.2.2.2 電流感測器特性......................37
3.2.2.3 電流感測器放大電路..................38
3.2.3 全波整流電路................................40
3.2.4 史密特觸發電路..............................43
3.2.5 計數器電路..................................44
第四章 MOV系統測試與實測結果.............................48
4.1 驗証檢測電路之準確性.............................49
4.2 MOV突波測試結果..................................51
4.2.1 MOV實測結果................................52
4.2.2 正常MOV之實測結果..........................52
4.2.3 老化MOV之實測結果..........................54
4.3 MOV模組之建立....................................56
4.3.1 正常MOV之模擬結果..........................57
4.3.2 老化MOV之模擬結果..........................60
4.3.3 副電路之模組參數設定.......................63
4.3.4 正常MOV與老化MOV之比較.....................65
第五章 MOV系統效能分析...................................69
5.1 有無加裝MOV對系統之影響..........................69
5.2 老化MOV對系統之影響..............................70
第六章 結論..............................................76
參考文獻.................................................78
附錄一...................................................80
附錄二...................................................82
附錄三...................................................83

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