臺灣博碩士論文加值系統

Bi4Ti3O12(BTO) 為主的材料，具有優越的鐵電特性，所以近來廣泛被研究，其中以鑭系元素摻雜之 (Bi,Ln)4Ti3O12 (BLnT) 鐵電薄膜為目前最有發展潛力的鐵電記憶體材料之一。
本實驗是用有機金屬裂解法 (MOD) 製作Pr-BNTO鐵電薄膜。我們是以Bi3.15Nd0.85Ti3O12為主體，希望藉由其他元素的不同來改善或增益BNTO薄膜的特性，因此以Pr取代部分Nd來研究 Bi3.15Nd0.85-xPrxTi3O12 (X = 0~0.4)等成分對其薄膜的特性之影響。
實驗中具最佳結果的為X = 0.4組成MOD法所製備的Pr-BNTO薄膜，經900 ℃空氣下，退火5秒後，其殘留極化量為180 μC/cm2，而矯頑電場為375 kV/cm。

Ferroelectric thin films of bismuth-layered perovskite family, e.g. Bi4Ti3O12 (BTO), due to its excellent ferroelectric characteristics have attracted the great attentions of many scientists. (Bi,La)4Ti3O12 (BLnT) has been recently considered as one of the most promising materials for nonvolatile random access memory (NvRAMs) devices.
The layerd-perovskite ferroelectric films of Pr3+-doped Bi3.15Nd0.85Ti3O12 , with the chemical formula of Bi3.15Nd0.85-xPrxTi3O12(X = 0~0.4),have been prepared by the meTallo-organic decoposition (MOD) method. The possible role of dopants in electric properties of BNTO films was investigated.
The best result was obtained for the Pr-BNTO films with MOD method having the composition at X = 0.4, after crystallization at 900 oC for 5 s. in air. The value of remanent polarization (Pr) is 180 μC/cm2 and the value of coercive field (Ec) is 375 kV/cm .

中文摘要..............................................I
Abstract.............................................II
誌謝................................................III
目錄.................................................IV
圖目錄...............................................VI
表目錄..............................................VII
第一章 緒論...........................................1
1-1 研究背景與動機....................................1
1-2 研究目標..........................................4
第二章 文獻回顧.......................................5
2-1 介電理論..........................................5
2-1-1 介電性..........................................5
2-1-2 極化機制........................................6
2-1-3 介電常數與損失正切..............................7
2-1-4 漏電流機制......................................8
2-1-5 介電強度.......................................10
2-2 鐵電材料的特性與應用.............................11
2-2-1 鐵電性.........................................11
2-2-2 鐵電陶瓷薄膜的應用.............................13
2-3 鉍層結構之鐵電材料...............................14
2-4 組成對BTO薄膜性質之影響..........................15
2-4-1 BTO性質........................................15
2-4-2 鉍（Bi）、鈦( Ti ) 比不同所造成的影響..........15
2-4-3 鉍位置上鑭 ( La ) 的取代添加與 BTO 性質........16
2-4-4 鉍位置上釹( Nd ) 的取代添加與BTO 性質..........17
2-4-5 鉍位置上Sm 的取代添加與BTO 性質................18
2-4-6 鉍位置上Eu 的取代添加與BTO 性質................19
2-4-7 鈦位置上釩（V）的取代添加與BTO 性質............19
2-4-8 鈦位置上鎢（W）與鉬（Mo）的取代添加與BTO性質...20
第三章 實驗方法與步驟................................22
實驗流程.............................................22
第四章 結果與討論...................................23
XRD 結構分析.........................................23
第五章 結論.........................................24
參考文獻.............................................33

[1]Z.B. Zhang, J.S. Liu, Y.N. Wang, J.S. Zhu, J.L. Liu, D. Su, H.M. Shen, J. Appl. Phys. Vol 85, 1746-1749 (1999)
[2]L. H. Chang, W. A. Anderson, Thin Solid Films Vol 303, 94-100 (1997)
[3]C.A. Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott & J.F. Scott, Nature.Vol 374, 627-629 (1995)
[4]吳朗，電子陶瓷-壓電，9-10
[5]吳朗，電子陶瓷-介電，19-25，44-93
[6]L. L. Hench and J. K. West, “ Principles of Electronic Ceramics”, John Wiley & Sons, 1990.
[7]J. B. Hudson, Surface Science, Ch17, Butterworth-Heinemann,1992.
[8]L. L. Hench and J. K. West, “ Principles of Electronic Ceramics”, John Wiley & Sons, 1990.
[9]吳朗，電子陶瓷-介電，93-97
[10]F. Yan, Y. Wang, J. Liu, Z. Zhang, X. Chen, “Mechanical relaxation in SrBi2Ta2O9 ceramics”, App. Phys. Lett. Vol 74, 2794-2796 (1999)
[11]K. Tani , T. Yamanobe , H. Matsuhashi and S.Nishikawa ,“Formation ofc – Asix - Oriented Bi4Ti3O12 Films with Extremely Flat surface by spin -coating”, Jpa. J. Appl. Phys.,36, ( 1997 ) , 1460 .
[12]S. Migita , T.Uesugi , H. Kishi and T. Hirai , “Growth Style of Bi4Ti3O12Thin Films on CeO2 / Ce0.12Zr0.88O2 Buffered Si Substrates”, Jpa. J. Appl. Phys., 38 , ( 1999 ) , 5411 .
[13]T. Watanabe and H. Funakubo , “Site definition and characterization ofLa-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition”, Journal of applied physics , 90, ( 2001 ), 6533.
[14]Yu - Ming Sun, Yi-Chan Chen, Jon - Yiew Gan, and Jenn – Chang Hwang, “Ferroelectric properties of ( 117 ) - and ( 001 ) - oriented
Bi3.25La0.75Ti3O12 polycrystalline thin films”, Applied Physics Letters ,
81 , ( 2002 ), 3221.
[15]B . H.Park , B. S. Kang , S. D. Bu , T. W. Noh , J. Lee and W.Jo.,“ Lanthanum-substituted bismuth titanate for use in non-volatile memories”, nature , 401, ( 1999 ), 682.
[16]U. Chon , Gyu-Chul Yi , and Hyun M. Jang , “Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin filmsgrown on Pt / Ti / SiO2 /Si( 100 ) by metalorganic solution decomposition”, Applied Physics
Letters , 78, ( 2001 ), 658.
[17]Jung-Kun Lee, Chang-Hoon Kim, Hee-Sang Suh, and Kug-Sun Hong,“Correlation between internal stress and ferroelectric fatigue in
Bi4-xLaxTi3O12 thin films”, Applied Physics Letters, 80, ( 2002 ), 3593.
[18]M. S. Tomar, R. E. Melgarejo, and A. Hidalgo, “Structural and ferroelectric studies of Bi3.44La0.56Ti3O12 films”, Applied Physics Letters, 83, (2003), 341.
[19]U. Chon , H. M. Jang , M. G. Kim , and C. H .Chang , “Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories”, Physical Review Letters, 89, ( 2002 ), 087601-1.
[20]R. E. Melgarejo and M. S. Tomara, “ Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol–gel process”, Applied Physics Letters , 81 , (2002), 2611.
[21]Takashi Kojima, Tomohiro Sakai, Takayuki Watanabe, and Hiroshi Funakubo , “Large remanent polarization of ( Bi , Nd )4Ti3O12 epitaxial thin films grownby metalorganic chemical vapor deposition”, AppliedPhysics Letters , 80 , ( 2002 ), 2746.
[22]Uong Chon, Ki - Bum Kim, Hyun M. Jang, and Gyu - Chul Yi ,“Fatigue -free samarium-modified bismuth titanate ( Bi4-xSmxTi3O12 ) film capacitors having large spontaneous polarizations”, Applied Physics Letters , 79 , ( 2001 ), 3137.
[23]Kyoung - Tae Kim , Chang- Il Kim , Dong - Hee Kang , Il – Wun Shim ,“The effect of Eu substitution on the ferroelectric properties of
Bi4 Ti3 O12 thin films prepared by metal.organic decomposition”. Thin
Solid Films 422. ( 2002 ), 230.
[24]Y. Noguchi , M. Miyayama , “Large remanent polarization of vanadium-doped Bi4Ti3O12”, Applied Physics Letters , 79 , ( 2001 ), 1903.
[25]T. Watanabe and H. Funakubo, “Effect of consubstitution of La and V in Bi4Ti3O12 thin films on the-temperature deposition”, Applied Physics Letters, 80, ( 2002 ), 100.
[26]X. Wang and H. Ishiwara, “Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75TiO12 thin films”, Applied Physics Letters , 82, ( 2003 ), 2479.