臺灣博碩士論文加值系統

本文研究以Si/Ta/Al基板的結構，經由陽極氧化法製備具有高密度性規則排列之氧化鉭奈米點陣列。我們可藉由製備的電解液和外加的電壓去控制點的大小，利用草酸所製備的奈米點直徑大小約為50 ~ 60 nm，而硫酸約為20 ~ 30 nm。
我們使用快速熱退火處理系統(RTA)在不同溫度下改變氧化鉭奈米點的含氧量，而後經由場發射掃描電子顯微鏡(FE-SEM)觀察結果，最後使用X光單晶繞射儀(XRD)鑑定氧化鉭奈米點的結晶性，並以螢光光譜儀(PL)來比較氧化鉭奈米點其光學特性的變化。

In this study.We used anodization on Si/Ta/Al substrate to fabricate the tantalum oxide nanodot arrays with high density and inerratic arrangement. The results show we can control point size by changing various types of solution and the size of the electric voltage. The diameter of nanodot is about 50 to 60 nm by anodic oxidation of oxalic acid solution and is about 20 to 30 nm by Sulfuric acid solution.
We changed temperature of rapid thermal anneal (RTA) to form various types of tantalum oxide nanodot.We observed the microstructure by field emission scanning electron microscopy (FESEM).The crystalline by the X-ray diffraction (XRD) and optical Characteristics by Photoluminescence (PL).

誌謝i
中文摘要ii
英文摘要iii
圖目錄v
表目錄vi
第一章 緒論1
1.1 前言1
1.2 研究動機與目的2
第二章 基本理論3
2.1奈米尺寸基本特性4
2.1.1 小尺寸效應4
2.1.2 表面效應5
2.1.3 量子尺寸效應5
2.2多孔性結構知氧化鋁膜6
2.2.1氧化鋁奈米多孔模板的結構特徵6
2.2.2氧化鋁奈米多孔模板的成長機制7
2.2.3氧化鋁奈米多孔模板的製備變因10
2.3.4 陽極處理近年來在製作奈米級多孔模板上的應用10
參考文獻

圖目錄
圖2-1奈米材料的電子能階分佈歐11
圖2-2矽半導體量子尺寸效應之能隙變化11
圖2-3氧化鋁奈米多孔模板結構圖︰(1)側視圖(side view)，(2)上視圖(top view) 12
圖2-4氧化鋁奈米多孔模板結構圖12
圖2-5陽極氧化過程之電流密度-時間曲線13

表目錄
表 一 奈米粒子的粒徑與原子表面的關係13

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