臺灣博碩士論文加值系統

本論文係研究利用不同製程製作之奈米金誘發非晶矽( a-Si )薄膜進行金屬誘發再結晶(MIC)形成多晶矽( poly-Si )薄膜，以供光電元件用之技術，並討論其微結構與電性之研究。首先在Si基板上以電漿助長化學汽相沉積( PECVD )系統成長 a-Si 薄膜，然後將不同製程參數之奈米金粒子鍍覆到試片上，最後再作不同時間之退火製程處理。
穿透式電子顯微鏡(TEM)用以觀察奈米金顆粒大小，動態光散射粒徑分析儀(DLS)用以量測奈米金粒子粒徑分佈。誘發之試片以X光繞射分析儀（XRD）進行結晶性分析，確認Si的結晶面存在與否，以拉曼光譜分析驗證多晶之存在，並以場發射式電子顯微鏡（FE-SEM）觀察其表面結構與斷面結構。最後誘發結晶薄膜之載子移動率由霍爾測得，並以直流電性量測儀量測其電流-電壓的特性。

In this thesis, nano gold particles made from different process are used in inducing anisotropic amorphous silicon ( a-Si ) thin film to crystallize polycrystalline silicon ( poly-Si ) films for application on optpelectronic device. Plasma enhanced chemical vapor deposition ( PECVD ) is used to growa-Si on the surface of the wafer, and then nano gold particles made from different process with different parameters coated on the a-Si films. Finally, the a-Si films with nano gold particle are annealed with different temperatures to relive the thermal stress.
In ths study, transmission electron microscopy (TEM) is used to observe the size of nano metal particles, and then the dynamic light scattering (DLS) is used to analyze the distribution of nano metal particles. XRD and Raman spectra analysis are used to identify the crystallinity of specimens made under different annealing time and temperatures. The surface and cross-section observation are observed and discussed via the field emission scanning electron microscopy (FE-SEM). Finally, carrier mobility of the induced polysilicon film is examined by Hall measurement and the the magnitude of leakage current of poly silicon film characterized by semiconductor analyzer HP4145 in our study.

摘要 i
誌謝 iii
目錄 iv
表目錄 viii
圖目錄 ix
第一章 緒論 1
1.1 研究背景 1
第二章 基礎理論 9
2.1 奈米金粒子 9
2.1.1 奈米材料的基本定義 9
2.1.2 奈米材料的基本特徵 9
2.1.3 奈米粒子的化學特性 10
2.1.4 奈米粒子的物理特性 10
2.1.5 表面電漿共振現象 11
2.1.6 金的奈米顆粒 11
2.1.7 奈米粒子製備法 12
2.2 太陽能電池 15
2.2.1 半導體之光導效應 15
2.2.2 半導體之光電效應 17
2.2.3 太陽能電池原理 17
2.2.4 太陽能電池種類 17
2.2.5 太陽光電模組發展趨勢 18
2.3 矽的結晶型態 19
2.3.1 多晶矽與非晶矽薄膜 20
2.4 成長多晶矽的方式 22
2.4.1 低壓化學氣相沉積（LPCVD） 22
2.4.2 觸媒式化學氣相沉積法（Cat-CVD） 23
2.4.3 固相再結晶技術（SPC） 24
2.4.4 準分子雷射再結晶法（ELA） 24
2.4.5 金屬誘發再結晶法（MIC） 25
2.5 金屬誘發結晶之原理 26
2.5.1 金屬誘發結晶 26
2.5.2 金屬誘發非晶矽薄膜橫向結晶之原理 28
2.5.3 金屬誘發非晶矽薄膜結晶之原理 30
2.5.4 鋁金屬誘發再結晶之成長機制 30
第三章 實驗步驟與分析 49
3.1 實驗步驟 49
3.1.1 實驗流程 50
3.1.2 製程與製程參數 53
3.2 製程設備 54
3.2.1 濕式蝕刻清洗系統（Wet bench） 54
3.2.2 高溫及低壓爐管（氧化、低壓沉積及退火系統） 55
3.2.3 電漿輔助式化學氣相沉積系統（PECVD） 56
3.2.4 金屬濺鍍系統（Sputter） 57
3.3 分析儀器 58
3.3.1 X-Ray繞射分析儀 58
3.3.2 拉曼光譜分析儀 60
3.3.3 場發射掃瞄式電子顯微鏡 61
3.3.4 熱激發穿燧式電子顯微鏡 62
3.3.5 動態光散射粒徑分析儀 63
3.3.6 直流電性量測系統 64
3.3.7 霍爾量測 66
第四章 結果與討論 75
4.1 50nm奈米金誘發 75
4.1.1 SEM對奈米金粒子塗佈之分析 75
4.1.2 EDS對奈米金粒子元素之分析 75
4.1.3 XRD與Raman結晶性分析 76
4.1.4 霍爾量測 77
4.2 10nm奈米金誘發 77
4.2.1 TEM、DLS對奈米金粒子粒徑大小之分析 77
4.2.2 SEM對奈米金粒子塗佈之分析 77
4.2.3 EDS對奈米金粒子元素之分析 77
4.2.4 XRD與Raman結晶性分析 78
4.2.5 SEM 表面形貌分析 79
4.2.6 霍爾量測 79
4.3 商用奈米金溶液誘發 80
4.3.1 DLS對奈米金粒子粒徑大小之分析 80
4.3.2 SEM對奈米金粒子塗佈之分析 80
4.3.3 XRD結晶性分析 80
4.3.4 霍爾量測 81
4.4 不同奈米金顆粒尺寸誘發 81
4.4.1 TEM、DLS對奈米金粒子粒徑大小之分析 81
4.4.2 SEM對奈米金粒子塗佈之分析 81
4.4.3 XRD結晶性分析 81
4.4.4 SEM 表面形貌分析 82
4.4.5 直流電性量測分析 82
4.4.6 霍爾量測 82
第五章 結論 105
第六章 參考文獻 106
附錄一 矽晶圓基本資料 114
自述 115

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