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研究生:蔡怡迦
研究生(外文):Yi-Jia Tsai
論文名稱:應用於壓電微力感測器之鋯鈦酸鉛薄膜製備
論文名稱(外文):Preparation of PZT thin films for micro force sensor applications
指導教授:林昭文林昭文引用關係
指導教授(外文):Jau-Wen Lin
學位類別:碩士
校院名稱:國立高雄應用科技大學
系所名稱:機械與精密工程研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:70
中文關鍵詞:濺鍍法PZT壓電薄膜
外文關鍵詞:sputteringPZTpiezoelectric thin films
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  • 收藏至我的研究室書目清單書目收藏:1
本文是以射頻磁控濺鍍法在Pt/Ti/SiO2/Si基板上沉積鋯鈦酸鉛(lead zirconate titanate,PZT)。在不同的沉積及熱處理條件下,期望能得到具有完全鈣鈦礦結晶及表面型態優良之壓電性質之PZT壓電薄膜。
本實驗將藉由SEM 來觀察退火完成後之表面型態及橫斷面;由EDS作定量之成分分析,由XRD分析其結晶性。在電性分析分面,使用HP-4194阻抗分析儀量測電容值、共振頻率及等效電阻值,並計算薄膜之介電常數,機電偶合系數及機械品質因素,以作為不同厚度薄膜電性優劣之判斷依據。
由實驗結果得知在濺鍍功率為300W經由650 ℃持溫30min退火處理後,可得到表面平整、薄膜成份為MPB莫爾成份比及結晶構造為完全鈣鈦礦結構之PZT薄膜。由電性量測結果發現,壓電性能隨著厚度增加而增加,但是增加幅度趨緩。當厚度為700nm時擁有最佳之機電偶合係數(Kp)。未來將在靶材中添加不同元素以提高薄膜機電偶合係數及機械品質因素,使薄膜更加適合應用於壓電感測元件。
In this study, PZT(52/48) thin films were deposited by RF magnetron sputtering on Pt/Ti/SiO2/Si substrate under different deposition power and annealing temperature. The purpose of this reserch is to obtain a full perovskite structure and smooth surface PZT thin films with optimal electric-mechanical properties.
The crystallization characteristics were determined by X-Ray diffraction. The micrographs of the surfaces and cross-sections of PZT thin films were observed by scanning electron microscopy and EDS to component analysis. A Precision Impedance Analyzer (HP-4194) is use to measure the capacitance, resonance frequency, antiresonance and equivalent resistance. The dielectric constant, electromechanical coupling factor and mechanical quality factor are calculated to determine the electrical properties of the PZT.
According to the experimental result, the PZT thin film deposited at RF- power 300 W and annealed at 650 ℃ for 30 minute has best surface profile. Also MPB composition and full perovskite structure can be observed at the deposition conditions. According to the electrical properties measurement results, the piezoelectricity increase with increased film thickness, but the increase rate decrease as the thickness increase. The electromechanical coupling factor is optimal at the thin film thickness of 700 nm according to the Kp measurement work. Superinduce others elements into the ceramic target in the future will enhance the electromechanical coupling factor and mechanical quality factor to match micro sensor device by piezoelectric thin films.
中文摘要------------------------------------------------------- I
英文摘要------------------------------------------------------- II
目錄----------------------------------------------------------- IV
表目錄--------------------------------------------------------- VI
圖目錄---------------------------------------------------------VII
第一章 緒論---------------------------------------------------- 1
1-1 研究目的與動機--------------------------------------------- 1
第二章 獻回顧與理論基礎----------------------------------------- 2
2-1 壓電陶瓷的發展歷史------------------------------------------ 2
2-1-1 單元系統壓電陶瓷----------------------------------------- 2
2-1-2 二元系統壓電陶瓷----------------------------------------- 2
2-1-3 三元系統壓電陶瓷----------------------------------------- 2
2-1-4 無鉛壓電陶瓷--------------------------------------------- 3
2-1-5 光學壓電陶瓷--------------------------------------------- 3
2-2 PZT薄膜相關應用-------------------------------------------- 3
2-3 PZT薄膜製備文獻回顧---------------------------------------- 6
2-3-1 有機金屬堆積鍍著法--------------------------------------- 6
2-3-2 有機金屬堆積鍍著法製作PZT薄膜之相關文獻----------------------6
2-3-3 溶凝膠法-------------------------------------------------7
2-3-4 溶凝膠法製備PZT薄膜之相關文獻----------------------------- 7
2-3-5 雷射剝鍍法--------------------------------------------- 8
2-3-6 雷射剝鍍法製備PZT薄膜之相關文獻---------------------------- 9
2-3-7 化學氣相沉積--------------------------------------------- 9
2-3-8 CVD法製備PZT薄膜之相關文獻-------------------------------- 10
2-3-9 物理氣相沉積--------------------------------------------- 11
2-3-10 濺鍍法製備PZT薄膜之相關文獻------------------------------- 14
2-4 鐵電與壓電性質----------------------------------------------17
2-4-1 鐵電性質--------------------------------------------------17
2-4-2 壓電性質------------------------------------------------ 19
2-4-3 PZT壓電材料的結構與特性----------------------------------- 21
2-5 壓電材料之重要電器參數-------------------------------------- 24
2-5-1 機電偶合因子-------------------------------------------- 24
2-5-2 機械品質因素--------------------------------------------- 25
2-5-3 械電損失因子--------------------------------------------- 25
2-5-4 頻率常數------------------------------------------------ 25
2-5-5 壓電應變常數-------------------------------------------- 26
2-6 電極材料選擇----------------------------------------------- 27
第三章 實驗方法與步驟------------------------------------------ 29
3-1 實驗儀器與靶材材料----------------------------------------- 29
3-2 實驗流程------------------------------------------------- 29
3-3 基板處理------------------------------------------------- 29
3-4 PZT壓電薄膜濺鍍-------------------------------------------29
3-5 薄膜熱處理------------------------------------------------ 30
3-6 EDS薄膜成份分析-------------------------------------------- 30
3-7 X-Ray 繞射分析-------------------------------------------- 31
3-8 SEM表面型態與橫斷面觀查------------------------------------- 31
3-9 電性量測試片製作------------------------------------------- 31
3-10 薄膜電性量測與分析------------------------------------------ 32
第四章 結果分析與討論------------------------------------------ 42
4-1 薄膜成分分析---------------------------------------------- 42
4-2 薄膜X-Ray 繞射結果與分析----------------------------------- 47
4-3 SEM表面型態及橫斷面觀察------------------------------------- 53
4-3-1 不同熱處理條件下之表面形態圖----------------------------- 53
4-3-2 薄膜厚度量測--------------------------------------------- 53
4-3-3 晶粒大小觀察--------------------------------------------- 53
4-4 不同厚度之電性量測結果與分析-------------------------------- 59
第五章 結論--------------------------------------------------------------------- 66
5-1 結論------------------------------------------------------ 66
5-2 未來展望-------------------------------------------------- 66
參考文獻-------------------------------------------------------- 68
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