臺灣博碩士論文加值系統

本研究的目的為利用RF磁控濺鍍(RF Magnetron Sputtering) ，在純氬氣濺鍍氣氛中沈積氧化鋅鎵(ZnO:Ga；97/3 wt%；純度99.995%，簡稱GZO)薄膜於可撓性塑膠基板(PET，polyethylene terephthalate；聚乙烯對苯二甲酸酯)上，形成用途廣泛的透明導電膜。應用田口實驗規劃(Taguchi Quality Design)及變異數分析，觀察不同濺鍍參數包括：射頻功率、製程壓力、鍍膜時間、基板溫度、退火溫度，對GZO透明導電膜的影響。研究發現提高濺鍍功率會降低薄膜電阻率，但是薄膜可見光穿透率卻變差，當薄膜厚度約600nm時，有較佳的可見光穿透率，同時兼具較低之電阻率。此外，提高基板溫度及退火溫度，可獲得低的電阻率及高的光穿透率。最後由灰關聯分析，求得本系統最佳鍍膜參數組合，所沉積之氧化鋅鎵透明導電膜，其電阻率為8.627×10-4Ω-cm，可見光穿透率約為90% 。

In this study, conducting and transparent gallium doped zinc oxide (ZnO:Ga；97:3 wt %, GZO) thin films have been deposited on polyethylene terephthalate (PET) substrates by radio-frequency (R.F.) magnetron sputtering. Taguchi experimental design was used to clarify the influence of various deposition conditions on the electrical, structural, morphological and optical characteristics for the GZO film. The signal-to-noise (S/N) ratio and the analysis of variance (ANOVA) are employed to study the performance characteristics in coating operations. According to the experimental results, show that the electrical resistivity and transmittance decreased as R.F power increase. During the process of GZO films(for a thickness about 600nm),when the substrate and post-annealing temperature were raised, the lowest electrical resistivity and the highest transmittance in the visible range have been obtained. Furthermore, based on the grey relational analysis, the lowest electrical resistivity of GZO films is found to be about 8.627×10-4 Ω-cm, the transmittance in the visible range was about 90 %.

目 錄

中文摘要 I
英文摘要 II
目錄 IV
表目錄 VII
圖目錄 IX
第一章 第一章 緒論 1
1.1 前言與研究背景 1
1.2 研究動機 2
1.3 研究目的 3
第二章 理論基礎與文獻回顧 5
2.1 透明導電膜 5
2.2 氧化鋅薄膜 8
2.2.1基本性質 8
2.2.2導電性質 9
2.2.3光學性質 9
2.2.4氧化鋅薄膜製備方法 10
2.3 氧化鋅鎵薄膜文獻回顧 10
2.4射頻濺鍍 13
2.4.1磁控濺鍍 15
2.5 田口式實驗規劃法 16
2.5.1因子的分類 17
2.5.2數據分析方法 18
2.6灰關聯分析 21
第三章 實驗實驗方法與步驟 23
3.1 實驗流程 23
3.2 實驗規劃 24
3.2.1 實驗參數 24
3.3實驗材料 26
3.4實驗設備 26
3.5實驗步驟 28
3.6鍍層分析及量測 30
3.6.1膜厚量測 30
3.6.2薄膜電性量測 30
3.6.3薄膜結構分析 32
3.6.4薄膜表面分析 32
3.6.5光穿透率分析 32
第四章 實驗結果與討論 33
4.1薄膜沉積速率 33
4.1.1射頻功率對薄膜沉積速率之影響 36
4.1.2製程壓力對薄膜沉積速率之影響 37
4.1.3基板溫度對沉積速率之影響 38
4.2薄膜電性分析 39
4.2.1射頻功率對薄膜電阻率之影響 40
4.2.2製程壓力對薄膜電阻率之影響 43
4.2.3鍍膜時間對薄膜電阻率之影響 43
4.2.4基板溫度對薄膜電阻率之影響 46
4.2.5退火溫度對薄膜電阻率之影響 49
4.3薄膜光學性質分析 54
4.3.1射頻功率對薄膜光穿透率之影響 55
4.3.2製程壓力對薄膜光穿透率之影響 56
4.3.3鍍膜時間對薄膜光穿透率之影響 57
4.3.4基板溫度對薄膜光穿透率之影響 58
4.3.5退火溫度對薄膜光穿透率之影響 59
4.4灰關聯分析與應證實驗 62
4.4.1灰關聯分析 63
4.4.2應證實驗 67
第五章 結論 71
參考文獻 73

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