臺灣博碩士論文加值系統

二硒化銅銦(CuInSe2, CIS)太陽能電池材料是極具有開發潛力，近來蓬勃的發展，主要因素在於它具有(1)優異的光電特性(2)經濟效應(3)材料性質穩定等特性。在許多製備方法中，電沉積法受到廣泛注意，在於它的設備裝置簡易與具有製造大面積表面材料的潛力。
本論文是以成長Al/ZnO/CdS/CuInSe2/ITO/Glass結構的太陽能電池，主吸收層 CuInSe2與抗反射層ZnO利用電沉積方法成長，Al電極在真空蒸鍍系統中成長，CdS使用化學槽水域法來成長。目前本實驗已成功作出具有光電流的ZnO/CdS/CuInSe2太陽能電池，由電流-電壓特性曲線，該元件具有顯著之二極體特性，同時由各元件的起始電壓與短路電流換算其填充因子之大小。以50瓦的鹵素燈，燈源距離元件為6公分，量測元件的開路電壓Voc=0.6 V，短路電流Isc=0.227 mA，填充因子F.F.=31.25 %，在太陽能電池的P-N接面，存在過多的缺陷，電子和電洞複合的機率變大，使得光電流變小，因此必須改善CuInSe2薄膜品質，以增進元件效率。

Copper indium diselenide, CuInSe2 (CIS), has become one of the leading materials for photovoltaic applications. Several methods of CIS preparation can be from in literature, such as spray pyrolysis, sputtering, vacuum evaporation, selenization of metallic films and electrodeposition. Among these, electrodeposition is gaining importance due to its low cost, ease of large area production and ability to control impurities.
This paper describes an investigation into the fabrication of Al/ZnO/CdS/CuInSe2/ITO/Glass thin-film solar cell. The absorber layer CuInSe2 films deposited by electrodeposition on ITO glass at room temperature. ITO glass back metal contact and the front metal contact of Al were fabricated by sputtering. The CdS buffer layer on top of the CuInSe2 layer deposited by a chemical bath deposition (CBD) technique. The ZnO window layer was grown by electrodeposition.
We have fabricated the ZnO/CdS/CuInSe2 thin-film solar cells with efficiency. From the I-V characteristics, we can get noticeable characteristics of diode. Then, we calculate the fill factor (F.F.) with the open-circuit voltage (Voc) and short-circuit current (Isc). The open circuit voltage (Voc) is 0.6 V, the short circuit current (Isc) is 0.227 mA and fill factor (F.F.) is 31.25 % in our device. Because the recombination current of junction is the dominant current, it’s essential to improve the quality of absorber layer CuInSe2 films and control the growth condition.

中文摘要 ………………………………………………………….. I
英文摘要 ……………………………………………..…………... II
目錄 ……………………………………………..………….. III
表目錄 ……………………………………………..………….. IV
圖目錄 ……………………………………………..………….. V
第一章 ……………………………………………..………….. 1
1-1 前言…………………………………………………………. 1
1-2 太陽能電池的工作原理…………………………………. 2
1-2-1 太陽能電池的構造與物理機制……………….. 2
1-2-2 太陽光的頻譜照度……………………………… 5
1-3 研究動機…………………………………………………. 6
第 二 章 原理………………………………………………………. 12
2-1 CuInSe2薄膜太陽能電池……………………………... 12
2-1-1 CuInSe2薄膜太陽能電池之研究發展…………. 13
2-1-2 CuInSe2薄膜之材料特性與晶體結構…………. 13
2-1-3 太陽光譜與CuInSe2薄膜吸收光譜之比較…… ……………15
2-1-4 CuInSe2薄膜之各種製造方式……………………. 15
2-2 電化學原理………………………………………………. 17
2-2-1 循環伏安法（Cyclic Voltammetry）………….. 17
2-2-2 定電位電解法（Chronoamperometry）………. 18
2-2-3 定電流電解法（Chronopotentiometry）……… 18
2-2-4 電鍍液酸鹼值（pH）的選擇………………….… 18
2-2-5 電沉積過程…………………………………….. 21
2-3 化學水浴沉積法…………………………………………. 22
2-3-1 CdS薄膜反應機制……………………………... 23
第三章 實驗部份…………………………………………………. 33
3-1 試藥與電極…………………………………………….… 34
3-1-1 實驗藥品……………………………………….. 34
3-1-2 電極系統……………………………………….. 34
3-2 元件設計與探討…………………………………………. 34
3-2-1 元件結構的選擇……………………………….. 34
3-2-2各層薄膜之需求與功能要求…………………... 35
3-3 電沉積方法鍍膜……………………………………….… 37
3-2-1基板的處理程序………………………………... 37
3-3-2 CuInSe2 薄膜鍍製……………………………… 37
3-3-3 CdS薄膜成長鍍製……………………………... 38
3-3-4 ZnO 薄膜成長鍍製…………………………….… 39
3-3-5 Al電極製作…………………………………….… 39
3-4 薄膜特性分析方法及儀器……………………………… 39
3-4-1 光繞射儀(X-ray diffractometry)………………. 39
3-4-2 掃瞄式電子顯微鏡(SEM)……………………………………39
3-4-3 能量分散式電子探測儀(EDS)………………… ……………40
3-4-4吸收光譜儀……………………………………... 40
3-4-5 霍爾效應量測(Hall measurement)…………….. 40
3-4-6電流-電壓特性曲線量測(I-V measurement)…… 40
第四章 結果與討論……………………………………………… 44
4-1 影響薄膜組成的因素…………………………………… 44
4-1-1 pH值對於薄膜組成的影響………………………. 44
4-1-2改變Cu、In、Se相對濃度對沉積薄膜組成之影響…………………………………………………………………………………44
4-1-3改變沉積電位對薄膜組成之影響……………... 44
4-1-4改變TEA的量對薄膜組成之影響…………………. 45
4-2 CuInSe2薄膜晶格結構分析………………………….…. 47
4-2-1 CuInSe2薄膜XRD分析………………………..… 47
4-2-2 鍛燒條件對薄膜晶格結構及組成之影響………. 48
4-3 CuInSe2薄膜之表面與剖面形態觀察……………….…. 55
4-4 CdS薄膜分析……………………………………………… 64
4-5 ZnO薄膜分析……………………………………………… 67
4-6 CuInSe2太陽能電池元件之電性量測…………………… 72
第五章 總結……………………………………………………… 75
參考文獻 ……………………………………………………………. 77
附錄 …………………………………………………………… 82

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