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研究生:蕭宇尊
研究生(外文):Yu-Tzun Hsiao
論文名稱:動電位陽極沉積錳氧化物薄膜之製備及其擬電容行為
論文名稱(外文):Preparation and Pseudo-capacitive Properties of Manganese Oxide Films by Potentiodynamic Anodic Deposition
指導教授:黃啟祥黃啟祥引用關係
指導教授(外文):C. S. Huang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:95
中文關鍵詞:動電位循環伏安擬電容超高電容器
外文關鍵詞:potentiodynamiccyclic voltammetrypseudo-capacitivesupercapacitor
相關次數:
  • 被引用被引用:2
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  • 下載下載:31
  • 收藏至我的研究室書目清單書目收藏:0
超高電容器電極材料之研發,最近深受注目,錳氧化物為可期待的電極材料之一。本研究旨在以動電位陽極沉積法於0.2M醋酸錳水溶液中製備出可做為超高電容器電極材料之錳氧化物薄膜,並對錳氧化物薄膜進行各種材料特性分析,探討其影響擬電容行為之原因。在電化學特性分析方面,是以循環伏安法於0.1M硫酸鈉、25℃下對錳氧化物薄膜進行擬電容行為測試及比電容值之評估。
分析結果發現,所製得之錳氧化物薄膜皆具結晶性,且具高孔隙度及奈米纖維結構之特性,於中性硫酸鈉水溶液中表現出理想的擬電容行為,相當適合做為超高電容器之電極材料。在沉積速率為100 mV/s下所製得之錳氧化物薄膜,有最佳之比電容值219.8 F/g(電位掃描速率為10 mV/s);此錳氧化物薄膜經過1000圈的循環伏安測試後,其比電容值衰退率僅約12 %。實驗中並以10 ~ 400 mV/s不等的電位掃瞄速率進行循環伏安測試;在電位掃描速率高達400 mV/s時,各薄膜之比電容值仍保有在10 mV/s時的70%左右,顯示其在長時效及高掃描速率之使用上具有相當優異的穩定性。
The electrode materials of supercapacitor are important research targets, recently. Manganese oxide is one of the promising electrode materials. This study tries to prepare the manganese oxide films on the graphite plate by potentiodynamic anodic deposition to get the electrode membrane of supercapacitors. The cyclic voltammetry was used to test the pseudo-capacitive behavior and specific capacitance in 0.1 M Na2SO4 solution at 25℃. In addition, the effects of material characteristics of the manganese oxide films on the pseudo-capacitive behavior were investigated.
  The experimental results indicated that the anodic deposits were composed of crystal manganese oxide. More over, based on its nature of high porosity and nano-fiber structure, the manganese oxide films exhibited ideal pseudo-capacitive performance in neutral Na2SO4 aqueous solution and were considered to be promising electrode material for a supercapacitor.
The manganese oxide films deposited at a scan rate of 100 mV/s exhibited the highest specific capacitance of 219.8 F/g (at a scan rate of 10 mV/s) and the decay rate of specific capacitance was only 12% after 1000 cycles of cyclic voltammetry testing. This study also attempted to execute cyclic voltammetry testing at a scan rate of 10 ~ 400 mV/s. The specific capacitance of each manganese oxide films remained 70% at 400 mV/s compared with that at 10 mV/s, showing a excellent stability for high scan rate and long cyclic-life.
目 錄
中文摘要…………………………………………………………… Ⅰ
英文摘要…………………………………………………………… Ⅱ
目錄………………………………………………………………… Ⅳ
表目錄……………………………………………………………… Ⅵ
圖目錄……………………………………………………………… Ⅶ
第一章 緒論………………………………………………………… 1
第二章 理論基礎與文獻回顧……………………………………… 4
2-1 儲能元件簡介………………………………………………… 4
2-2 超高電容器…………………………………………………… 5
2-2-1 超高電容器之特性……………………………………… 5
2-2-2 超高電容器之分類……………………………………… 6
2-3 超高電容器之電極材料……………………………………… 8
2-3-1 金屬氧化物電極材料…………………………………… 9
2-3-2 錳氧化物電極製備方法…………………………………10
2-4 錳氧化物薄膜的儲能機構……………………………………15
第三章 實驗方法及步驟……………………………………………35
3-1 電極材料製備…………………………………………………35
3-1-1 石墨電極片前處理………………………………………35
3-1-2 陽極沈積錳氧化物薄膜…………………………………35
3-2 藥品與製備錳氧化物薄膜之儀器設備………………………36
3-3 錳氧化物薄膜電極製作流程…………………………………37
3-4 錳氧化物薄膜之性質分析……………………………………38
3-4-1 電容特性分析……………………………………………38
3-4-2 晶體結構分析……………………………………………39
3-4-3 化學成分分析……………………………………………39
3-4-4 微觀組織分析……………………………………………41
第四章 結果與討論…………………………………………………45
4-1 陽極沉積錳氧化物薄膜………………………………………45
4-2 錳氧化物晶體結構的低掠角X-ray分析 ……………………46
4-3 錳氧化物薄膜化學成分的Raman分析 ………………………47
4-4 錳氧化物薄膜表面SEM觀察及α-step厚度分析 ……………48
4-5 錳氧化物微觀組織結構的TEM分析 …………………………50
4-6 錳氧化物薄膜的循環伏安行為及比電容值…………………52
4-7 錳氧化物薄膜之穩定性分析…………………………………53
4-8 結語……………………………………………………………55
第五章 結論…………………………………………………………90
參考文獻 ……………………………………………………………91
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