臺灣博碩士論文加值系統

在光纖通訊的系統中，一個發射端的元件，雷射有必須發光在1.31與1.55微米的限制，主要是因為不同波長的光在光纖中傳輸的色散與衰減有所不同，而在這兩個波長分別為最小。在過去，長波長雷射的基板為磷化銦，而在這篇論為所使用的則是砷化鎵，主要是因為砷化鎵有其先天上的優勢：(1) 有適合的材料成長布拉格反射鏡 (2) 溫度特性佳 (3) 散熱能力佳 (4) 價格便宜。而金屬有機化學氣相沉積法的成長速率與產能均十分快速，為目前市場上主流的方法。
本論文一開始著重在雷射主動層，量子井的研究。由於在主動層掺入氮會造成光特性的衰退，因此我們先成長了特性十分好的砷化銦鎵量子井，且波長拉長到其先天上的限制1.2微米，再掺入儘可能少量的氮，將波長拉長到1.3微米，我們成功的成長出氮砷化銦鎵的量子井，波長在1.23與1.28微米，並且將這兩量子井運用在雷射結構中。我們將雷射製作成寬面積邊射型雷射以去探討其特性，這兩個雷射的波長分別為1.26與1.31微米，臨界電流密度分別為795與1485.3 (A/cm2)，特徵溫度則分別為241K(20~40oC)與140K(15~35oC)。

In the optical fiber communications, the emission wavelengths of lasers are selected to be 1.31 and 1.55μm. The attenuation and dispersion are at their minimum values in these two regions. The conventional long-wavelength lasers were made of InP-based materials. Instead, the GaAs-based materials are used as the active-media of long-wavelength lasers in this thesis. They have several inherent advantages compared with InP-based materials: (1) suitable material for DBR, which is a very essential part for VCSELs. (2) high characteristic temperature (3) good thermal conductivity (4) low cost and robust substrate.
The thesis focused on growing high quality active-media, InGaAsN QWs, starting from the optimization of InGaAs QWs. An excellent optical quality (FWHM ~ 20meV) InGaAs QWs were demonstrated and the peak-wavelength is 1.2μm, which is approaching its critical thickness limitation. However, adding nitrogen into QWs severely degrades the optical quality, so very little nitrogen composition was incorporated into the QWs, and InGaAsN QWs wavelength achieved 1.28 and 1.31μm are grown successfully. Two InGaAsN QWs broad area lasers were fabricated and the device characteristics were measured. The wavelength of the two lasers were 1.26 and 1.31μm,the threshold current density were 795 and 1485.3 A/cm2, and the characteristic temperature are 241K (20~40oC) and 140K (15~35oC), respectively.

Abstract..................................................I

Table and Figure Captions...........................VIII&IX

Chapter 1 Introduction....................................1
1-1 Motivation............................................1
1-2 Long Wavelength GaAs-based Lasers.................2
1-3 Organization of This Thesis.......................3

Chapter 2 MOVPE and Measurement Instrument................9
2-1 Metal Organic Vapor Phase Epitaxy Growth Syste....9
2-1.1 Mass Transport Limited Growth..............11
2-1.2 Surface Kinetics Limited Growth............11
2-1.3 Thermodynamically Limit Growth.............13
2-2 Measurement System...............................13
2-2.1 Photoluminescence Spectroscopy.............13
2-2.2 HR-XRD Characterization....................15
2-2.3 Atomic Force Microscopy....................17
2-2.4 Laser Measurement System...................18

Chapter 3 Theory and Epitaxy of the Active Region........24
3-1 Theory of Active Region..........................24
3-1.1 Critical Thickness.........................24
3-1.2 Band Anticrossing in III-N-V Alloys........25
3-1.3 N Penalty..................................27
3-1.4 Calculation of Nitride Composition.........29
3-2 Epitaxy of Active Region.........................30
3-2.1 Design Consideration of Active Region......30
3-2.2 InGaAs Quantum Well........................30
3-2.3 InGaAsN Quantum Well.......................32
3-2.4 Antimony Assistant.........................34

Chapter 4 Fabrication and Characterizations of Laser
Devices........................................48
4.1 Laser Structure..................................48
4-2 Fabrication of Broad Area Lasers.................49
4-3 Extraction of Laser Parameter....................50
4-4 Characterization of The Device...................52
4-5 Discussion .......................................54

Chapter 5 Quantum Dot Structure..........................66
5-1 Definition of Quantum Dot Structure..............66
5-2 Self-organization Quantum Dot....................66
5-3 Growth Interruption ..............................68
5-4 In0.5Ga0.5As Quantum Dot.........................69
5-5 InAs Quantum Dot.................................71
5-6 In0.5Ga0.5As PIN Photodetector...................72

Chapter 6 Conclusion and Future Work.....................84
6-1 Conclusion .......................................84
6-2 Future Work......................................85
6-2.1 InGaAsN:Sb QWs Toward 1.55μm...............85
6-2.2 1.3μm InGaAsN VCSEL........................86
6-2.3 1.3μm InGaAsN Oxide-confinement Edge
Emitting Laser.............................86

Appendix I...............................................90
Appendix II..............................................93
Reference ................................................94

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