臺灣博碩士論文加值系統

本實驗利用共濺鍍方式，固定矽靶材之射頻功率，調整不同比例之鎳射頻功率使不同含量的鎳金屬原子能夠與矽原子同時沉積於P型矽(Si)基板上，之後利用高溫爐對試片進行熱處理，以期在高溫下能使鎳金屬能夠與矽形成矽化鎳合金，進而改善薄膜之電特性。
實驗分別對不同鎳含量沈積的試片進行不同溫度條件之熱處理，分別探討其在不同熱處理條件下的試片之結晶狀態及電特性，由實驗結果可以發現，經過熱處理的試片可以獲得較明顯鎳化矽結晶；相較於未熱處理前的試片表面薄膜電阻率，經過高溫熱處理後由於鎳化矽的生成亦能夠有效降低其電阻率。
本實驗以射頻共濺鍍方法進行薄膜沉積，除了可以使鎳金屬更能平均分散於矽元素中，使得鎳化矽結晶能夠均勻成長外，相較於傳統直接沈積鎳金屬薄膜於非晶矽層並經過高溫熱處理的製作矽化鎳方法，由於減少了蝕刻去除未反應鎳金屬層的後製程式，因此可以縮短整個製程時間。此外，製程中工作溫度低於600oC以下，能夠應用在其他較不適用於高溫製程的基板如玻璃等，進而廣泛使用於工業界的量產。

In this experiment, Silicon and Nickel atoms were deposited on the P-type Silicon substrate using co-sputtering system, and then the sample were annealed in the high temperature furnace. With fixed RF power on the Silicon target and changing the RF power on Nickel target, we made a series of specimens with different percentage of Nickel atoms in the thin film to find out the best condition to fabricate the Nickel silicide film with better electrical properties.
Sample deposited in the sputter with different quantity of Nickel atoms in the thin film were then analyzed the volume of crystalline and thin film characteristic by using micro-Raman spectroscopy and XRD. From our experiment results, we found that increasing the percentage of Nickel atoms deposited in the thin film and annealed under higher temperature would help the thin film with better electrical properties and more obvious crystalline.
By using the co-sputter system to fabricate the Nickel silicide thin film that we used in this experiment could provide thin film with better coverage of Nickel atoms which help forming of NiSi grains. Without regular etching step after the fabrication of NiSi thin film to clean un-reacted Nickel atom on surface of substrate, it saves a lot of time; besides, low annealing temperature in the experiment would be useful for application in the substrates like glass that couldn’t stand for high temperature.

摘要 1
Abstract 3
誌謝 5
Content 6
Table Caption 7
Figure Caption 8
Chapter 1 Introduction 10
1. Research Background 10
2. Experiment Purpose 11
Chapter 2 Background Theory 13
1. Nickel SILICIDE FOR METAL INDUCED CRYSTALLIZATION(MIC) 13
2. NICKEL INDUCED CRYSTALLIZATION BEHAVIOR 14
3. EXCIMER LASER ANNEALING(ELA) 16
4. NICKEL SILICIDE IN CMOS TECHNOLOGY 18
Chapter 3 Experiment Procedure 21
1. RF MAGNETRON SPUTTERING SYSTEM 21
2. SPECIMEN FABRICATION 21
3. SPECIMEN ANALYSIS 23
I. Hall effect measurement 23
II. Micro-Raman spectroscopy 24
III. X-ray diffraction spectra (XRD) 24
Chapter 4 Results and Discussion 27
1. GROWTH RATE 27
2. X-RAY DIFFRACTION PATTERN 28
3. MICRO-RAMAN SPECTROSCOPY 29
4. THIN FILM RESISTIVITY 31
Chapter 5 Conclusion 33
Reference 35

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