臺灣博碩士論文加值系統

本論文係探討主動式有機發光二極體 (AMOLED) 顯示器驅動電路分別使用非晶矽薄膜電晶體與複晶矽薄膜電晶體對溫度的效應。模擬的結果顯現使用非晶矽材料之電路傾向正溫度相關然而使用複晶矽材料之電路傾向負溫度相關與單晶矽材料有相同特性。儲存電容和資料電壓調制，門檻電壓和載子遷移率變異對電路的影響亦討論之。
我們使用數值方法及模擬結果的資料作曲線擬合，並得到一個相對方程式。經由此方程式可方便地估計出驅動電路的各種特性及量化電路的各種特性。此論文用HSPICE模擬電路，用MATLAB作曲線擬合。
雖然模擬的結果指出有機發光二極體驅動電路使用複晶矽薄膜電晶體有較優良的表現，但因準分子雷射製程所造成的電性不均勻，對製造大面積低成本的顯示面板是個嚴正的課題。

In this thesis, the temperature effect on driving circuits of active matrix organic light emitting diode display with both materials of amorphous and polycrystalline silicon TFT is investigated. The results of simulation manifest that circuit with amorphous silicon thin-film transistor tends to be positive temperature dependence, whereas circuit with polycrystalline silicon thin-film transistor tends to be negative temperature dependence which is the same behavior as single crystal material. The modulated parameters of storage capacitor and data voltage, the variation of threshold voltage and carrier field effect mobility are also studied.
We utilize the numerical method to obtain the equations fitting the curves from simulation data and successfully quantify the circuit behaviors except qualitative description. It is convenient to evaluate various characteristics of the driving circuits via these equations we develop. The simulator tool, HSPICE, for circuit simulation and MATLAB for curve fitting to obtain the equations are performed in this thesis.
The simulation results strongly indicate that poly-Si TFT applied in AM-OLED is more superior than a-Si TFT, although the non-uniformity of electrical characteristics caused by excimer laser crystallization (ELC) facility is a severe problem to fabricate large size and low cost panels.

Chinese Abstract……………………I
English Abstract……………………II
Acknowledgements…………………IV
Contents………………………V
List of Tables……VIII
List of Figures……IX
Chapter 1 Introduction……1
1.1 Overview of AMOLED ……1
1.2 Flat panel displays……2
1.3 Motivation and objectives of this thesis..4
1.4 Organization of this thesis……5
Chapter 2 Operation principles of OLED, a-Si:H TFT and poly-Si TFT…6
2.1 Principle of OLED…6
2.1.1 History of Organic Light-Emitting Diodes....6
2.1.2 Physics of Organic Light-Emitting Diodes……………………………………8
2.1.3 Operating Principle…………………………………………………………10
2.1.4 Applications of Organic Light-Emitting Diodes………………………14
2.2 Operation principle of a-Si:H TFT………………………………………………15
2.2.1 Physics of a-Si:H…………………………………………………………15
2.2.2 Applications………………………………………………………………19
2.3 Operation principle of poly-Si TFT…………………………………………20
2.3.1 Physics of poly-Si TFT………………………………………………………20
2.3.2 Methods of forming poly-Si………………………………………………23
2.3.3 Applications…………………………………………………………………24
2.4 Temperature effect on device performance…………………………………24
Chapter 3 Driving circuits with a-Si:H-based pixel………………28
3.1 Characteristics of NMOS device……………………………………………………28
3.2 Conventional 2T1C pixel circuit……………………………………………………30
3.2.1 2T1C working principle………………………………………………………30
3.2.2 Simulation results and Discussion………………………………………30
3.3 Current programming circuit………………………………………32
3.3.1 Current copy pixel circuit…………………………………32
3.3.2 Current mirror pixel circuit………………………………33
Chapter 4 Driving circuits with poly-Si-based pixel……………36
4.1 Characteristics of PMOS device………………………………………………36
4.2 Conventional 2T1C pixel circuit………………………………………………37
4.2.1 2T1C working principle……………………………………………………37
4.2.2 Simulation results and Discussion……………………………38
4.3 Current programming circuit………………………………………………………39
4.3.1 Current mirror pixel circuit………………………………………………39
4.3.2 Simulation results and Discussion………………………………………40
4.4 Voltage programming circuit………………………………………42
4.4.1 Voltage modulated pixel circuit…………………………………………42
4.4.2 Simulation results and Discussion………………………………………43
Chapter 5 Conclusions and Future work……………45
5.1 Conclusions…………………………………………………………45
5.2 Future work………………………………………………………46
References………………………………………………………………………47
Tables…………………………………………………………………………………52
Figures…………………………………………………………………………58

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