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研究生:何家琦
論文名稱:Ta2O5閘極介電層特性及尺寸效應所造成的MIS電容邊際漏電流
論文名稱(外文):Characteristics of Ta2O5 Gate Insulator and Scaling Effects on Edge Current of MIS Capacitor Leakage
指導教授:張國明
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電機學院碩士在職專班電子與光電組
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:英文
論文頁數:75
中文關鍵詞:介電層尺寸效應邊際漏電流
外文關鍵詞:Ta2O5Scaling EffectLeakage
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就VLSI的元件技術而言,作用於1伏特操作電壓最大可容忍的閘極電流密度約為1 ~ 10 A/cm2,相當於15 ~ 20 Å的氧化層厚度。對SiO2來說,當氧化層小於30Å時,發生直接穿隧發生的機率增加,將引起閘極電流的急遽上升。為解決此問題,可採用高介電係數材料,來提高其實際厚度(physical thickness)並減輕介電層內之電場強度,進而降低閘極漏電流。
本實驗利用直流濺鍍法,將鉭金屬沈積於矽基材上,接著在低溫通氧的爐管之中,生成氧化鉭薄膜。針對30Å及40Å兩種不同厚度的金屬薄膜,同時做750℃到950℃的快速熱退火處理,並利用X光繞射圖譜判斷薄膜的結晶結構及原子力顯微鏡觀察薄膜表面的粗糙度。從物性及電性分析來求其最佳的電性I,對30Å的薄膜,氧化後再經過750度30秒的快速熱退火處理有最低的漏電流以及最佳的電性; 40Å薄膜則是850度30秒的熱處理有最佳的電性。
經由定電流加壓測試其可靠度發現,對於不同的元件尺寸,其邊際所引發的漏電流,將會對其可靠度有大的影響。實驗中使用四種不同的元件尺寸面積,分別探討其面電流及邊際電流對其可靠度的影響,發現大尺寸元件的線電流密度大,面電流密度小,小尺寸元件則是線電流密度小,面電流密度大。 大尺寸元件 雖然以總電流貢獻度來說,面電流較大,但是大的線電流密度卻會對可靠度造成較大影響。
Chapter 1 Introduction
1.1 The Requirement of High K Material …1
1.2 The Essential of High K Material …2
1.2.1 High-K Dielectric Constant and Energy Band gap …2
1.2.2 Thin Film Crystal Type …3
1.2.3 Interfacial Stability …3
1.2.4 Reliability …3
1.2.5 Metallic Gate …3
1.3 The High-K Candidate of Ta2O5 …4
1.4 Thesis Organization …5
Chapter 2 Experimental of Al/Ta2O5/Si MIS Capacitor
2.1 MOS / MIS Capacitor …6
2.2 Process Flow Description …7
2.2.1 Wafer RCA Clean …7
2.2.2 Thermal Oxidation Growth …8
2.2.3 Ta2O5 Dielectric Growth …8
2.2.4 Rapid Thermal Annealing System …9
2.2.5 Electrode Coating …10
2.2.6 Summary of Process Flow …11
2.3 Analysis of the Physical Characteristics …13
2.3.1 N&K Analyzer Measurement …13
2.3.2 Atomic Force Microscope (AFM) …13
2.3.3 X-ray Diffraction (XRD) …15
2.3.4 Secondary Ion Mass Spectrometer (SIMS) …17
Chapter 3 Electrical Characteristics of Al/Ta2O5/Si MIS Capacitors
3.1 Capacitance-Voltage Characteristics …………………………………………20
3.1.1 Equivalent Oxide Thickness (EOT) and Dielectric Constant …22
3.1.2 Flatband Voltage (VFB) …25
3.2 Current-Voltage Characteristics …29
3.2.1 Leakage Current under both Bias Polarities …29
3.2.2 Band-gap Diagram and Conduction Mechanism …35
3.2.3 Breakdown Voltage …46
3.3 Reliability Issues of the Ultra Thin Ta2O5 Films …47
3.3.1 Stress Induced Leakage Current (SILC) …47
3.3.2 Hysteresis Effect …55
3.3.3 Frequency Dispersion …58
3.4 Scaling Effect induce Edge Leakage of MIS Capacitor …61
3.4.1 Constant Current Stress (CCS) …61
3.4.2 Discuss of Bulk and Sidewall Leakage …63
Chapter 4 Conclusion and Future Work
4.1 Conclusion …69
4.2 Future Work …69
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