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研究生:林承德
研究生(外文):Cheng-De Lin
論文名稱:應用於射頻電路上低溫製程之SU-8射頻微機電串聯型開關
論文名稱(外文):SU-8 RF MEMS Series Switch: A Low Temperature Fabrication Process for RFIC Applications
指導教授:鄭裕庭
指導教授(外文):Yu-Ting Cheng
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子工程系所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:95
語文別:中文
論文頁數:26
中文關鍵詞:微機電開關低溫製程
外文關鍵詞:SU-8MEMSswitchlow-temperature
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此篇文章在於介紹新穎的製程在於矽基材上,利用SU-8材料及微加工過程去製作射頻微機電開關。開關是被設計成雙側固定端,且利用靜電力驅動的SU-8 (1.7μm) /銅(0.6μm) /SU-8 (2.6μm)三層結構的懸壁梁開關。此為結構開關的特性,包括在12GHz內,擁有小於0.76dB介入損失和 大於 27.8dB各離性。雖然此被製作出來的微機電開關的驅動電壓為46伏特,但此結構的微機電開關可以在被設計較低驅動電壓的開關,例如設計較薄的懸壁樑結構、更大的驅動電壓面積已及較長型的懸壁樑。然而,由於此SU-8製程全成過程的製程溫度低於135°C, 我們相信擁有低溫特性的SU-8製程將會有效地實現射頻微機電開關整合於系統晶片上的可能。
The paper presents a novel SU-8 micro-maching process for series RF MEMS switch fabrication on a silicon substrate. The switch is designed with a clamped-clamped SU-8 (1.7μm) /Cu (0.6μm) /SU-8 (2.6μm) bridge structure driven by electrostatic force. The performances of the switch include �T 0.76dB insertion loss and �d 27.8dB isolation up to 12GHz. Although the actuation voltages is about 46V, the structure can be further designed with less beam thickness, larger actuated electrode and longer beam length for low voltage actuation. Since the whole fabrication process can be kept below 135°C, it is our belief that the low temperature characteristic of the SU-8 process will realize cost-effective RFMEMS switches for integrated CMOS RF SOC (System-on-a-Chip) application.
Contents
摘要 i
Abstract ii
誌謝 iii
Contents iv
Figure Captions v
Table Captions vi

Contents
Chapter 1 Introduction 1
Chapter 2 Concept Design and Fabrication 6
2.1 Concept Design of the SU-8 RF MEMS Switch 6
2.2 The fabrication of the SU-8 RF MEMS Switch 11
Chapter 3 Results and Discussions 15
3.1 The SEM photograph 15
3.2 Measurement Result 17
3.3 Verification and Discussion 19
Chapter 4 Summary and Future Work 22
4.1 Summary 22
4.2 Future Work 22
References 24





Figure Captions
Chapter 2
Fig. 2-1 The top view of a SU-8 MEMS switch 7
Fig. 2-2 The cross section view of a SU-8 MEMS switch 7
Fig. 2-3 The 3-D schematic diagram of a SU-8 MEMS switch.
(Expanding view in Z-direction scale) 9
Fig. 2-4 The simulation of RF characteristic (a) Isolation for the off state. (b) Insertion loss for on state. 10
Fig. 2-5 The Fabrication for surface-micro-machined RF MEMS Switch on silicon substrate 12
Fig. 2-6 (a) The electroplating of top actuated electrode. (b) After removing the photo resistance and electroplating seed layer. 14
Chapter 3
Fig. 3-1 The SEM of top view photo of the switch. 16
Fig. 3-2 The enlarged SEM of the gap between beam and CPW 16
Fig. 3-3 Top-view of the SU-8 MEMS switch is measured by Aglient network analyzer and biased by power supply 17
Fig. 3-4 The S11 (return loss) and S21 (insertion loss) of the switch under on state 18
Fig. 3-5 The S11 (return loss) and S21 (isolation) of the switch under off state 19


Table Captions
Chapter 1
Table 1-1 The introduction of some SU-8 made devices.....................................4
Table 1-2 The advantages of RF MEMS switch than FET & PIN diode based switch 5
References
1. H. Lorenz, M. Despont, N. Fahrni, N. LaBianc, J. Brugger, P. Vettiger, P Renaud, “SU-8: A Low-Cost Negative Resist for MEMS”, Journal of Micromechanics and Microengineering, vol. 7, no. 3, pp. 121-124, APRIL 1997.
2. Matthew Hopcroft, Tobias Kramer, Gyuman Kim, Kazuki Takashima, Yakichi Higo, David Moore, and Juergen Brugger, “Micromechanical Testing of SU-8 Cantilevers”, Fatigue and Fracture of Engineering Materials and Structures, vol. 28, no. 8, pp. 735-742(8), August 2005.
3. Sheng Li, Carl B. Freidhoff, Robert M. Young, and Reza Ghodssi, “Fabrication of Micronozzles Using Low Temperature Wafer-level Bonding with SU-8”, Journal of Micromechanics and Microengineering, vol. 13, no. 5, pp. 732-738, September, 2003..
4. Fan-Gang Tseng, Yun-Ju Chuang, and Wei-keng Lin, "A Novel Fabrication Method Of Embedded Micro Channels Employing Simple UV Dosage Control And Antireflection Coating", Technical Digest IEEE International Conference MEMS 2002, pp.69-72, Las Vegas, USA, 20-24 JANUARY, 2002.
5. Guofeng Pang, Michael Sayer, Geoffrey R. Lockwood, “Fabrication of PZT Sol Gel Composite Ultra sonic Transducers Using Batch Fabrication Micromolding”, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 53, no. 9, pp. 1679-1684, SEPTEMBER 2006.
6. A. L. Bogdanov, "Use of SU-8 negative photo resist for optical mask manufacturing", Proceedings of SPIE, vol. 3999, pp. 1215-1225, 2000.
7. Y. Shi and S.-G. Kim, “A Lateral, Self-Cleaning, Direct. Contact MEMS Switch”, Proc. IEEE MEMS 2005, pp. 195-198, 2005.
8. Y. Choi, K. Kim, Mark G. Allen, “Continuously-varying, Three-Dimensional SU-8 Structures: Fabrication of Inclined Magnetic Actuators”, Proceedings of the IEEE Micro Electro Mechanical Systems,. Las Vegas, USA, pp. 176-179, January 2002.
9. Yong-Kyu Yoon, Jin-Woo Park, Mark G. Allen, “Polymer-core conductor approaches for RF MEMS”, IEEE Journal of Micro electromechanical Systems, vol. 14, no. 5, pp. 886-894, OCTOBER 2005.
10. G, M. Rebeiz, and J. B. Muldavin, “RF MEMS switches and switch circuits”, IEEE Micro., vol. 2, pp. 59-71, DECEMBER 2001.
11. Daniel Hyman, Juan Lam, Brett Warneke, Adele Schmitz, T. Y. Hsu, Julia Brany, and Jae Lee, own, James Schaffner, Andy Walston, Robert Y. Loo, Mehran Mehreg, “Surface-Micromachined RF MEMs Switches on GaAs Substrates”, Int. J. of RF and Microwave Computer-Aided Eng., vol.9, no.4, pp. 348-61, JULY 1999.
12. G. M. Rebeiz, “RF MEMS theory, design, and technoligy”, New Jersey: J.Wiley & Sons, 2003..
13. MEMSCYCLOPEDIA.ORG: http://memscyclopedia.org/su8.html.
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