臺灣博碩士論文加值系統

在本篇論文當中，我們運用低溫複晶矽薄膜電晶體為元件，分別從元件結構以及其顯示器應用電路設計兩方面來探討均勻性之問題。在此研究中，我們藉由佈局方式簡單地調整元件架構來提升低溫複晶矽薄膜電晶體之均勻性，此外亦提出對元件變異性具有高度補償能力之主動矩陣式有機發光二極體畫素電路以及源極隨耦器形式的類比緩衝電路。

The uniformity issues of the low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) were investigated from the individual aspects of device structure and the display driving circuits design in this dissertation. In this work, the device structure is adjusted to improve the uniformity of LTPS TFTs by changing layout method. Furthermore, active matrix organic light emitting diode pixel circuits and a source follower type analog buffer circuit with highly compensating capability are also proposed.

Contents

Abstract (in Chinese) i
Abstract (in English) iv
Acknowledgments (in Chinese) vii
Contents viii
Table Lists xiv
Figure Captions xv

Chapter 1 Introduction……………………………………………1
1.1 Overview of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (LTPS TFT) Technology………………………………………………………………………..1
1.2 Overview of the Organic Light Emitting Diode (OLED) Displays……………………..5
1.2.1 Passive Matrix OLED and Active Matrix OLED…………………………………6
1.2.2 Emission Structures for AMOLED………………………………………………..7
1.2.3 Driving Architecture Comparison between AMLCD and AMOLED………..…..10
1.2.4 Comparison of Transistor Types: A-Si TFTs vs. LTPS TFTs…………………….11
1.3 System on a Panel (SOP) Issues and Concept in LTPS TFTs……………………...…..12
1.3.1 Concept of System on a Panel……………………………………………………13
1.3.2 Peripheral Circuitries across the Panel……………………………………...……14
1.3.3 Critical Issues of System on Panel…………………………………...…………..15
1.4 Motivation……………………………………………………………………………...18
1.4.1 From the Aspect of Device Structures – Interdigitated Layout and Multi-channel Structure to Improve Uniformity between LTPS-TFTs……………………….……….19
1.4.2 From the Aspect of Circuit Design -- Pixel Compensation Circuits for AMOLEDs and Source Follower Type Analog Buffers for System on Panel…………………...….19
1.5 Dissertation Organization……………………………………………………….........20

Chapter 2 Uniformity in the Interditigated Layout and Multi-channel Structure of Low-Temperature Polycrystalline Silicon Thin Film Transistors ……………………....................................23
2.1 Introduction…………………………………………………………………………..23
2.2 Dimensional Effects and Layout Methods on the Matching Properties of P-channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors…………………………….25
2.2.1 Experimental Procedure and Results…………………………………………...25
2.2.2 Comparison of Different Layout Methods……………………………………...30
2.3 Devices Fabrication of the Low-Temperature Polycrystalline-Silicon Thin Film Transistors with Multi-Channel Structure……………………………………………..……..39
2.3.1 Experimental Procedure………………………………………….……………..39
2.3.2 Measured Results and Discussion………………………………………………42
2.4 Discussions of the Improved Uniformity Mechanisms between the Conventional and Multi-channel Structures…………………………………………………………………...…51
2.5 Summary…………………………………………………………………………55

Chapter 3 Evaluated Results of Conventional Pixel Circuit, Other Compensation Circuits and Proposed Pixel Circuits for Active Matrix Organic Light Emitting Diodes (AMOLEDs)…………………………………..56
3.1 Introduction…………………………………………………………………………..56
3.2 Simulation Results of Dimensional Effects on Transistors and Storage Capacitor in Conventional Pixel Circuit........................................................................................................59
3.2.1 The Effect of Switching TFT…………………………………………………...61
3.2.2 The Effect of Driving TFT……………………………………………………...62
3.2.3 The Effect of Storage Capacitor………...………………………………………63
3.2.4 The Effect of Transistor Slicing Layout………………………………………...64
3.3 Digital Driving Circuits………………………………………………………………66
3.3.1 Area Ratio Gray Scale Method (ARG)…………………………………………66
3.3.2 Time Ratio Gray Scale Method (TRG)…………………………………………67
3.4 Simulation Results of Analog Driving Circuits………………………………………68
3.4.1 Voltage Programming Circuits………………………………………………….69
3.4.1.1 Self-Compensation Method………………………………………………69
3.4.1.2 Matching TFTs Method…………………………………………………...70
3.4.1.3 Resistance or Active Load Method……………………………………….71
3.4.1.4 Diode Connection Method………………………………………………..72
3.4.1.5 AC Driving Method………………………………………………………74
3.4.2 Current Programming Circuits………………………………………………….75
3.4.2.1 Current Copy Method…………………………………………………….75
3.4.2.2 Current Mirror Method…………………………………………………...76
3.4.3 Novel Driving Circuits………………………………………………………….77
3.5 Proposed Pixel Circuit Design………………………………………………………..81
3.5.1 Compensation Method Using Diode Connection Concept……………………..81
3.5.2 Simulation Results and Discussion……………………………………………..82
3.6 Modified Pixel Circuit Design………………………………………………………..88
3.7 Comparison between the Proposed Pixel Circuits and Other Pixel Circuits Design…95
3.8 Several-Frames Issue of the Proposed Pixel Circuit………………………………….96
3.9 Summary…………………………………………………………………………….102

Chapter 4 Experimental Results of the Conventional and Proposed Pixel Circuits for Driving Organic Light Emitting Diodes Using Low-Temperature Polycrystalline Silicon Thin Film Transistors……..104
4.1 Introduction……………………………………………………………………....104
4.2 Experimental Procedures and the Setup of Measurement System…………………106
4.3 Experimental Results of Dimensional Effects on Transistors and Storage Capacitor in Conventional Pixel Circuit......................................................................................................111
4.3.1 The Effect of Switching TFT…………………………………………………..111
4.3.2 The Effect of Driving TFT…………………………………………………...112
4.3.3 The Effect of Storage Capacitor………...……………………………………113
4.3.4 The Effect of Transistor Slicing Layout……………………………………...114
4.4 Experimental Results of Proposed Pixel Circuit Design…………………………..117
4.5 Summary………………………………………………………………………..…119

Chapter 5 Evaluated Results and Comparisons of Source Follower Type, Operational Amplifier Type, and Proposed Analog Buffer Circuits…………………….120
5.1 Introduction………………………………………………………………………...120
5.2 Considerations for Designing of LTPS-TFTs Analog Buffer Circuits…...………..122
5.3 Simulation Results of Operational Amplifier Type (Op-amp-type) Analog Buffer..123
5.3.1 Typical Op-amp-type Analog Buffer…………………………………………123
5.3.2 Bias Circuit Op-amp-type Analog Buffer………………………………..…..125
5.3.3 Differential Pair Op-amp-type Analog Buffer…………………………….....126
5.4 Simulation Results of Source Follower Type Analog Buffer……………………....128
5.4.1 Conventional Source Follower Type Analog Buffer…………………...…….128
5.4.2 Self-Compensation Method………………………………………………….130
5.4.3 Matching TFTs Method………………………………………………………135
5.5 Issues of Conventional Source Follower Type Analog Buffer……………...……...136
5.5.1 Unsaturated Output Voltage Phenomenon of the Analog Buffer…………….138
5.5.2 Output Voltage Distributed Phenomenon of the Analog Buffer……………..139
5.6 Proposed Source Follower Type Analog Buffer…………………………...………140
5.7 Comparisons between the Proposed Analog Buffer Circuit and Other Analog Buffer Circuits Design………………………………………………………………………………144
5.8 Summary…………………………………………………………...………………146

Chapter 6 Experimental Results of the Conventional and Proposed Source Follower Type Analog Buffer Circuits ………………………………………………148
6.1 Introduction……………………………………………………………………..….148
6.2 Measured Results of the Effect of Transistor Slicing Layout Method on Conventional Analog Buffer Circuit.............................................................................................................149
6.3 Proposed Source Follower Type Analog Buffer Fabrication and Measured Results……………………………………………………………………………………….153
6.4 Bias Voltage Effects on Offset Voltage…………………………………………….156
6.5 Summary……………………………………………………………………….......161

Chapter 7 Summary and Conclusions…………...……................163

Chapter 8 Future Prospects……………………………………....167

References…………………………………………………………170

Publication Lists

Vita

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Chapter 2:

[2.1] Toshiyuki Yoshida, Yoshiki Ebiko, Michiko Takei, Nobuo Sasaki, and Toshiaki Tsuchiya, “Grain-boundary related hot carrier degradation mechanism in low-temperature polycrystalline silicon thin-film transistors, ” Jpn. J. Appl. Phys. Part 1, vol. 42, pp. 1999-2003, 2003.
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Chapter 3:

[3.1] G. Gu, and S. R. Forrest, “Design of flat-panel displays based on organic light-emitting devices,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, pp. 83-99, 1998.
[3.2] Arokia Nathan, Stefan Alexander, Kapil Sakariya, Peyman Servati, Sheng Tao, Denis Striakhilev, Anil Kumar, Sanjiv Sambandan, Shahin Jafarabadiashtiani, Yuri Vigranenko, Corbin Church, Jay Wzorek, and Paul Arsenault, “Extreme AMOLED backplane in a-Si with proven stability,” in SID Tech. Dig., 2004, pp. 1508-1511.
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[3.6] Yongtaek Hong, Jeong-Yup Nahm, and Jerry Kanicki, “200 dpi 4-a-Si:H TFTs current-driven AM-PLEDs,” in SID Tech. Dig., 2003, pp. 22-25.
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[3.16] Mayumi Mizukami, Kazutaka Inukai, Hirokazu Yamagata, Toshimitsu Konuma, Takeshi Nishi, Jun Koyama, Shumpei Yamazaki, and Tetsuo Tsutsui, “6-bit digital VGA OLED,” in SID Tech. Dig., 2000, pp. 912-915.
[3.17] James L. Sanford, and Frank R. Libsch, “Vt compensated voltage-data a-Si TFT AMOLED pixel circuit,” Journal of the SID., vol. 12, pp. 65-73, 2004.
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[3.20] Jun Koyama, Kazutaka Inukai, Junya Maruyama, Toshimitsu Konuma, and Shumpei Yamazaki, “Active matrix display by time gray scale method,” in AMLCD Tech. Dig., 2000, pp. 253-256.
[3.21] Kazutaka Inukai, Hajime Kimura, Mayumi Mizukami, Junya Maruyama, Satoshi Murakami, Jun Koyama, Toshimitsu Konuma, and Shumpei Yamazaki, “4.0-in. TFT-OLED displays and a novel digital driving method,” in SID Tech. Dig., 2000, pp. 924-927.
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[3.23] S. Ono, Y. Kobayashi, K. Miwa, T. Tsujimura, “Pixel circuit for a-Si AM-OLED,” in Proceedings of International Display Workshops, 2003, pp. 255-258.
[3.24] Sang-Moo Choi, Oh-Kyong Kwon, and Ho-Kyun Chung, “An improved voltage programmed pixel structure for large size and high resolution AM-OLED displays,” in SID Tech. Dig., 2004, pp. 260-263.
[3.25] Sang-Hoon Jung, Woo-Jin Nam, and Min-Koo Han, “A new voltage modulated AMOLED pixel design compensating threshold voltage variation of poly-Si TFTs,” in SID Tech. Dig., 2002, pp. 622-624.
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[3.41] Hajime Akimoto, Hiroshi Kageyama, Yoshiteru Shimizu, Hiroki Awakura, Shigeyuki Nishitani, and Toshihiro Sato, “An innovative pixel-driving scheme for 64-level gray-scale full-color active matrix OLED displays,” in SID Tech. Dig., 2002, pp. 972-975.
[3.42] Hiroshi Kageyama, Hajime Akimoto, Takayuki Ouchi, Naruhiko Kasai, Hiroki Awakura, Naoki Tokuda, and Toshihiro Sato, “A 3.5-inch OLED display using a 4-TFT pixel circuit with an innovative pixel driving scheme,” in SID Tech. Dig., 2003, pp. 96-99.
[3.43] Hiroshi Kageyama, Hajime Akimoto, Takayuki Ouchi, Naruhiko Kasai, Hiroki Awakura, Naoki Tokuda, Kenta Kajiyama, and Toshihiro Sato, “A 2.5-inch OLED display with a three-TFT pixel circuit for clamped inverter driving,” in SID Tech. Dig., 2004, pp. 1394-1397.
[3.44] Naruhiko Kasai, Hiroki Awakura, Hajime Akimoto, Hiroshi Kageyama, Toshihiro Sato, and Naoki Tokuda, “A color balance control system for OLED with clamped inverter driving,” in SID Tech. Dig., 2004, pp. 1394-1397.
[3.45] Hajime Akimoto, Hiroshi Kageyama, Yoshiteru Shimizu, Hiroki Awakura, Naruhiko Kasai, Naoki Tokuda, and Toshihiro Sato, “Two TFT pixel circuit with non-uniformity suppress-function for voltage programming active matrix OLED displays,” in SID Tech. Dig., 2005, pp. 1550-1553.
[3.46] Won-Kyu Kwak, Kwan-Hee Lee, June-Young Song, Ki-Myeong Eom, Yang-Wan Kim, Sung-Cheon Park, Young-Jong Park, Sun-Hwa Kim, Choon-Yul Oh, Naoaki Komiya, and Byung-Hee Kim, “A 1.8-in. QVGA AMOLED display with new driving method and ultra slim technology,” in SID Tech. Dig., 2005, pp. 1448-1451.
[3.47] N. Komiya, C. Y. Oh, K. M. Eom, J. T. Jeong, H. K. Chung, S. M. Choi, and O. K. Kwon, “Compensation of Vth compensation ability among voltage programming circuits for AMOLED panels,” in Proceedings of International Display Workshops, 2003, pp. 275-278.
[3.48] W. K. Kwak, K. H. Lee, C. Y. Oh, H. J. Lee, S. A. Yang, H. E. Shin, and H. K. Chung, “A 5.0-in WVGA AMOLED display for PDAs,” in SID Tech. Dig., 2003, pp. 100-103.

Chapter 4:

[4.1] Yeh-Jiun Tung, Richard Hewitt, Anna Chwang, Michael Hack, Julie Brown, Kyu-Man Kim, Dae Suk Kim, Ji Ho Hur, and Jin Jang, “A 200-dpi transparent a-Si TFT Active-Matrix Phosphorescent OLED display,” in SID Tech. Dig., 2005, pp. 1546-1549.
[4.2] A. Nathan, P. Servati, K. S. Karim, D. Striakhilev, and A. Sazonov, “Thin film transistor integration on glass and plastic substrates in amorphous silicon technology,” IEEE Proc.-Circuits Devices Syst., vol. 150, pp. 329-338, 2003.
[4.3] Arokia Nathan, Kapi Sakariya, Anil Kumar, Peyman Servati, Karim S. Karim, Denis Striakhilv, Andrei Sazonov, “Amorphous silicon TFT circuit integration for OLED displays on glass and plastic,” in IEEE Custom Integrated Circuits Conference, 2003, pp. 215-221.
[4.4] P. Servati, S. Prakash, A. Nathan, and Christoph Py, “Amorphous silicon driver circuits for organic light-emitting displays,” J. Vac. Sci. Technol., 2002, pp. 1374-1378.
[4.5] C. C. Wu, S. D. Thesis, G. Gu, M. H. Lu, J. C. Sturm, S. Wagner, and S. R. Forrest, “Integration of organic LED’s and amorphous Si TFT’s onto flexible and lightweight metal foil substrates,” IEEE Electron Device Lett., vol. 18, pp. 609-612, 1997.
[4.6] Ameen K Saafir, Jinkoo Chung, Insu Joo, Jongmoo Huh, Jungsoo Rhee, Seungkyu Park, Bemrak Choi, Cunseok Ko, Byungsik Koh, Jaehoon Jung, JoonHoo Choi, Namdeog Kim, Kyuha Chung, Gordana Srdanov, Charlie MacPherson, Nugent Truong, Matthew Stevenson, Andrew Johnson, Peter chen, Terri Cardellino, Ray Pflanzer, Gang Yu, Alberto Goenaga, Marie O’Regan, and Dalen Keys, “A 14.1” WXGA solution processed OLED display with a-Si TFT,” in SID Tech. Dig., 2005, pp. 968-971.
[4.7] A. Nathan, P. Servati, and K. S. Karim, “TFT circuit integration in a-Si:H technology,” in Proc. International Conference on Microelectronics, 2002, pp. 115-124.
[4.8] Yi He, Reiji Hattori, and Jerzy Kanicki, “Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays,” IEEE Trans. Electron Devices, vol. 48, pp. 1322-1325, 2001.
[4.9] J. A. Nichols, T. N. Jackson, M. H. Lu, and M. Jack, “a-Si:H TFT active-matrix phosphorescent OLED pixel,” in SID Tech. Dig., 2002, pp. 1368-1371.
[4.10] Jae-Hoon Lee, Woo-Jin Nam, Sang-Hoon Jung, and Min-Koo Han, “5-TFTs pixel circuit design for active matrix organic light emitting diode compensating the non-uniformity of poly-Si TFTs and OLEDs,” in Proceedings of International Display Workshops, 2003, pp. 279-282.
[4.11] D. Fish, N. Young, M. Childs, W. Steer, D. George, D. McCulloch, S. Godfrey, M. Trainer, M. Johnson, A. Giraldo, H. Lifka, and I. Hunter, “A comparison of pixel circuits for active matrix polymer/organic LED displays,” in SID Tech. Dig., 2002, pp. 968-971.
[4.12] S. K. Bhowmick, and B. Mazhari, “An improved four circuit for active-matrix organic light emitting diode (OLED) display,” in SID Tech. Dig., 2002, pp. 606-609.
[4.13] Yenchung Lin, Han-Ping D. Shieh, An Shih, and Yaw-Ming Tsai, “A novel current memory circuit for active matrix organic light emitting display,” in SID Tech. Dig., 2003, pp. 746-749.
[4.14] I. M. Hunter, N. D. Young, “Active matrix addressing of polymer light emitting diodes using low temperature poly silicon TFTs,” in AMLCD Tech. Dig., 2000, pp. 249-252.
[4.15] Takashi Chuman, Satoru Ohta, Satoshi Miyaguchi, Hideo Satoh, Takahisa Tanabe, Yoshiyuki Okuda, and Masami Tsuchida, “Active matrix organic light emitting diode panel using organic thin-film transistors,” in SID Tech. Dig., 2004, pp. 45-47.
[4.16] Yong-Hoon Kim, Dae-Gyu Moon, and Jeong-In Han, “Organic TFT array on a paper substrate,” IEEE Electron Device Lett., vol. 25, pp. 702-704, 2004.
[4.17] W. A. MacDonald, K. Rollins, D. MacKerron, R. Eveson, R. A. Rustin, K. Rakos, and M. Handa, “Plastic displays – latest development in polyester film for plastic electronics,” in SID Tech. Dig., 2004, pp. 420-423.
[4.18] Karl Amundson, Jay Ewing, Peter Kazlas, Ray McCarthy, J. D. Albert, Robert Zehner, Paul Drzaic, John Rogers, Zhenan Bao, and Kirk Baldwin, “Flexible, active-matrix display constructed using a microencapsulated electrophoretic material and an organic-semiconductor-based backplane,” in SID Tech. Dig., 2001, pp. 160-163.
[4.19] D. J. Gundlach, Y.-Y. Lin, and T. N. Jackson, “Pentacene organic thin-film transistor-molecular ordering and mobility,” IEEE Electron Device Lett., vol. 18, pp. 87-89, 1997.
[4.20] Gordon Yip, Reiji Hattori, and Shintarou Sugimoto, “Single DAC current delivery system for driving AMOLED panel with increased pixel uniformity,” in SID Tech. Dig., 2005, pp. 434-437.
[4.21] Hai-Jung In, Pyong-Su Kwag, Jin-Sung Kang, Oh-Kyong Kwon, and Ho-Kyoon Chung, “A novel voltage-sensing and voltage-programming method for large-size and high resolution AMOLED panels,” in Proceedings of International Display Workshops/Asia Displays, 2005, pp. 633-636.

Chapter 5:

[5.1] Yoo-Chang Sung, Sun-Man So and Jong-Kee Kim, “10bit Source Driver with Resistor-Resistor-String Digital to Analog Converter,” in SID Tech. Dig., pp. 1099-1101, 2005.
[5.2] Y. Aoki, T. lizuka, S. Sagi, M. Karube, T. Tsunashima, S. Ishizawa, K. Ando, H. Sakurai, T. Ejiri, T. Nakazono, M. Kobayashi, H. Sato, N. Ibaraki, M. Sasaki and N. Harada, “A 10.4-in. XGA Low-Temperature Poly-Si TFT-LCD for Mobile PC Applications,” in SID Tech. Dig., pp. 196-199, 1999.
[5.3] Yoshihiro Nonaka, Hiroshi Haga, Hiroshi, Tsuchi, Youichi Kitagishi, Tadahiro Matsuzaki, Mitsuhiro Sugimoto, Hiroshi Hayama and Hideki Asada, “ A Low-Power SOG LCD with Integrated DACs and a DC-DC Converter for Mobile Applications,” in SID Tech. Dig., pp. 1148-1451, 2004.
[5.4] Woo-Jin Nam, Sang-Hoon Jung, Jae-Hoon Lee, Hye-Jin Lee and Min-Koo Han, “A Low-Voltage P-type Poly-Si Integrated Driving Circuits for Active Matrix Display,” in SID Tech. Dig., pp. 1046-1049, 2005.
[5.5] Hye-Jin Lee, Woo-Jin Nam, Jae-Hoon Lee, Sang-Myeon Han and Min-Koo Han, “Highly Efficient DC-DC Converter Employing P-type Poly-Si TFTs for Active Matrix Displays,” in IDW/AD, pp. 1231-1232, 2005.
[5.6] Shin-Hung Yeh, Wein-Town Sun, Chien-Chih Chen and Chien-Sheng Yang, “A Novel Integrated DC-DC Converter Using LTPS TFT,” in SID Tech. Dig., pp. 1442-1445, 2005.
[5.7] J. Jeon, O. K. Kwon and I. Lee, “A New Digital Driving Scheme for Poly-Si TFT-LCD Panels,” ASIA DISPLAY, pp. 425-428, 1998.
[5.8] Rui Itou, Masanori Kayama and Takeshi Shima, “Some analog building blocks for TFT circuits,” IEEE MWSCAS, vol.1, pp.417-420, 2001.
[5.9] Hoon-Ju Chung, Seung-Woo Lee, and Chul-Hi Han, “Poly-Si TFT push-pull analogue buffer for integrated data drivers of poly-Si TFT-LCDs,” Electronics Letters, vol. 37, pp. 1093-1095, 2001.
[5.10] Y. Kida, Y. Nakajima, M. Takatoku, M. Minegishi, S. Nakamura, Y. Maki and T. Maekawa, “A 3.8 inch half-VGA transflective color TFT-LCD with completely integrated 6-bit RGB parallel interface drivers,” in EURODISPLAY, 2002, pp. 831-834.
[5.11] Sang-Hoon Jung, Joong-Hyun Park, Chang-Wook Han, and Min-Koo Han, “New source follower type analog buffers using poly-Si TFTs for active matrix displays,” in SID Tech. Dig., 2004, pp. 1452-1455.

Chapter 6:

[6.1] Kook Chul Moon, In-Hyuk Song, Bong-Hyun You, Ji-Hoon Kim, and Min-Koo Han, “DAC (digital-analog converter) and output buffer for AM-LCD employing poly-Si TFT,” in Proceedings of International Display Workshops, 2003, pp. 487-490.
[6.2] Ming-Dou Ker, Chih-Kang Deng, and Ju-Lin Huang, “On-panel design technique of threshold voltage compensation for output buffer in LTPS technology,” in SID Tech. Dig., 2005, pp. 288-291.
[6.3] Chih-Wen Lu, and Chung Len Lee, “A low-power high-speed class-AB buffer amplifier for flat-panel-display application,” IEEE Transactions on Very Large Integration (VLSI) Systems, vol. 10, pp. 163-168, 2002.
[6.4] Chih-Wen Lu, “A new rail-to-rail driving scheme and a low-power high-speed output buffer amplifier for AMLCD column driver application,” in IEEE International Symposium on Circuits and Systems, 2003, pp. I229-I232.
[6.5] Chih-Wen Lu, “High-speed driving scheme and compact high-speed low-power rail-to-rail class-B buffer amplifier for LCD applications,” IEEE J. Solid State Circuits, vol. 39, pp. 1938-1947, 2004.
[6.6] Tetsuro Itakura, Hironori Minamizaki, Tetsuya Saito, and Tadashi Kuroda, “A 402-output TFT-LCD driver IC with power control based on the number of colors selected,” IEEE J. Solid State Circuits, vol. 38, pp. 503-510, 2003.
[6.7] Ching-Wei Lin, Du-Zen Peng, Ryan Lee, Yi-Fan Shih, Chung-Kuei Jan, Meng-Hsun Hsieh, Shih-Chang Chang, and Yaw-Ming Tsai, “Advanced poly-Si device and circuitry for AMOLED and high-integration AMLCD,” in International Display Manufacturing Conference, 2005, pp. 315-318.
[6.8] Kh. Hadidi, and A. Khoei, “A highly linear cascode-driver CMOS source-follower buffer,” in Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, 1996, pp. 1243-1246.
[6.9] Woo-Jin Nam, Hee-Sun Shin, Won-Kyu Lee, Sanq-Geun Park, Min-Koo Han, “Offset canceling scheme of p-type poly-Si analog buffer employing voltage level-shifter,” in Proceedings of International Display Workshops/Asia Display, 2005, pp. 1209-1210.
[6.10] Pang-Cheng Yu, and Jiin-Chuan Wu, “A class-B output buffer for flat-panel-display column driver,” IEEE J. Solid State Circuits, vol. 34, pp. 116-119, 1999.
[6.11] Sang-Hoon Jung, Chang-Wook Han, In-Hyuk Song and Min-Koo Han, “A new poly-Si analog buffer using source follower for active matrix displays,” in Proceedings of International Display Workshops, 2003, pp. 1683-1684.
[6.12] Yong-Su Yoo, Jin-Young Choi, Hyun-Sook Shim, and Oh-Kyong Kwon, “A high accurate analog buffer circuit using low temperature poly-Si TFT,” in SID Tech. Dig., 2004, pp. 1460-1463.
[6.13] C. Yoo, D.-J. Kim, and K.-L. Lee, “Threshold voltage and mobility mismatch compensated analogue buffer for poly-Si TFT-LCDs,” Electronics Letters, vol. 41, pp. 65-66, 2005.

Chapter 8

[8.1] Vikas Rana, Ryoichi Ishihara, Yasushi Hiroshima, Daisuke Abe, Satoshi Inoue, Tatsuya Shimoda, Wim Metselaar, and Kees Beenakker, “Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain,” IEEE Trans. Electron Devices, vol. 52, pp. 2622-2628, 2005.
[8.2] Tien-Fu Chen, Ching-Fa Yeh, and Jen-Chung Lou, “Investigation of grain boundary control in the drain junction on laser-crystallized poly-Si thin film transistors,” IEEE Electron Device Lett., vol. 24, pp. 457-459, 2003.
[8.3] Hideya Kumomi, Chihiro Shin, Gou Nakagawa, and Tanemasa Asano, “Single-grain TFTs on location-controlled crystal grains formed by excimer laser crystallization of Si thin films,” in IEDM Tech. Dig., 2004, pp. 773-776.
[8.4] Mitsuharu Tai, Mutsuko Hatano, Shinya Yamaguchi, Takeshi Noda, Seong-Kee Park, Takeo Shiba, and Makoto Ohkura, “Performance of poly-Si TFTs fabricated by SELAX,” IEEE Trans. Electron Devices, vol. 51, pp. 934-939, 2004.
[8.5] Karim S. Karim, Arokia Nathan, and John Alan Rowlands, “Amorphous silicon active pixel sensor readout circuit for digital imaging,” IEEE Trans. Electron Devices, vol. 50, pp. 200-208, 2003.
[8.6] Zhong-Shou Huang, Takao Ando, “A novel amplified image sensor with a-Si:H photoconductor and MOS transistors,” IEEE Trans. Electron Devices, vol. 37, pp. 1432-1438, 1990.
[8.7] E. Fortunato, F. Soares, G. Lavareda, and R. Martins, “A new linear array thin film position sensitive detector (LTFPSD) for 3D measurements,” in Proc. Mat. Res. Soc. Symp., vol. 377, 1995, pp. 797–802.
[8.8] J. P. Lu, P. Mei, R. T. Fulks, J. Rahn, J. Ho, Y. Wang, J. B. Boyce, and R. A. Street, “Excimer laser processing for a-Si and poly-Si thin film transistors for image applications,” J. Vac. Sci. Technol. A, vol. 18, pp. 1823-1829, 2000
[8.9] Karim S. Karim, Arokia Nathan, and John Alan Rowlands, “Active pixel sensor architectures in a-Si:H for medical imaging,” J. Vac. Sci. Technol. A, vol. 20, pp. 1095-1099, 2002
[8.10] Yavuz Degerli, Francis Lavernhe, Pierre Magnan, and Jean A. Farre, “Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels,” IEEE Trans. Electron Devices, vol. 47, pp. 949-962, 2000.
[8.11] Karim S. Karim, and Arokia Nathan, “Readout circuit in active pixel sensors in amorphous silicon technology,” IEEE Electron Device Lett., vol. 22, pp. 469-471, 2001.
[8.12] J. P. Lu, K. Van Schuylenbergh, J. Ho, Y. Wang, J. B. Boyce, and R. A. Street, “Flat panel imagers with pixel level amplifiers based on polycrystalline silicon thin-film transistor technology,” Appl. Phys. Lett., vol. 18, pp. 4656-4658, 2002
[8.13] Sunetra Mendis, Sabrina E. Kemeny, and Eric R. Fossum, “CMOS active pixel image sensor,” IEEE Trans. Electron Devices, vol. 41, pp. 452-453, 1994.
[8.14] M. Maolinbay, Y. El-Mohri, L. E. Antonuk, K.-W. Jee, S. Nassif, X. Rong, and Q. Zhao, “Additive noise properties of active matrix flat-panel imagers,” Med. Phys., vol. 27, pp. 1841-1854, 2000