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References
[1] M. L. French and M. H. White, “Scaling of multidielectric nonvolatile SONOS memory structures,” Solid State Electronics, vol. 37, p. 1913, 1995. [2] Y. L. Yang, A. Purwar and M. H. White, “Reliability considerations in scaled SONOS nonvolatile memory devices,” Solid State Electronics, vol. 43, p. 2025, 1999. [3] M. H. White, et al., “A low voltage SONOS nonvolatile semiconductor memory technology,” NVSM, p. 52, 1996. [4] Y. L. Yang and M. H. White, “Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures,” Solid State Electronics, vol. 44, p. 949, 2000. [5] B. Eitan, et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Elect. Dev. Lett., vol. 21, p. 543, 2000. [6] B. Eitan, “Non-Volatile semiconductor cell utilizing asymmetrical charge trapping,” U. S. Patent 5 768192, June 16, 1998. [7] M. K. Cho and D. M. Kim, “High Performance SONOS Memory Cells Free of Drain Turn-On and Over-Erase: Compatibility Issue with Current Flash Technology,” IEEE Elect. Dev. Lett., vol. 21, p. 399, 2000. [8] J. D. Bude, “Gate current by impact ionization feedback in sub-micron MOSFET technologies,” Proc. Symp. VLSI Technology, p. 101, 1995. [9] J. D. Bude, M. R. Pinto and R. K. Smith, “Monte Carlo Simulation of the CHISEL Flash Memory Cell,” TED, vol. 47, p. 1873, 2000. [10] C. Y. Lu, T. C. Lu and R. Liu, “NON-VOLATILE MEMORY TECHNOLOGY - TODAY AND TOMORROW,” IPFA, pp. 18-23, 2006. [11] C. C. Yeh, et al., “Novel operation schemes to improve device reliability in a localized trapping storage SONOS-type flash memory,” IEDM, p. 169, 2003. [12] Y. W. Chang, et al., “Modeling for the 2nd-Bit Effect of a Nitride-Based Trapping Storage Flash EEPROM Cell under Two-Bit Operation,” EDL, vol. 25, p. 95, 2004. [13] H. T. Lue, et al., “Studies of the reverse read method and second-bit effect of 2 bit/cell nitride-trapping device by quasi-two-dimensional model,” IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 119-125, 2006. [14] G. Ingrosso, L. Selmi and E. Sangiorgi, “Monte Carlo Simulation of Program and Erase Charge Distributions in NROMTM Devices,” ESSDERC, p. 187, 2002. [15] W. Stefanutti, et al., “Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-Gate Memory Cells,” TED, vol. 53, p. 89, 2006. [16] D. Esseni and L. Selmi, “Experimental signature and physical mechanism of substrate enhanced gate current in MOS devices,” IEDM, 9. 579, 1998. [17] L. Selmi and D. Esseni, “A better understanding of substrate enhanced gate current in VLSI MOSFETs and flash cells. II. Physical analysis,” TED, vol. 46, p. 376, 1999. [18] MEDICI User Guide X-2005.10, Synopsys, Inc., 2005. [19] H. Shichijo and K. Hess, “Band structure dependent transport and impact ionization in GaAs,” Phys. Rev., vol. 23, p. 4197, 1981. [20] J. Y. Tang and K. Hess, “Impact ionization of electrons in silicon,” J. Appl. Phys., vol. 54, p. 5139, 1983. [21] M. Fischetti, S. E. Laux, and E. Crabbe, “Understanding hot-electron transport in silicon devices: Is there a shortcut?” J. Appl. Phys., pp.1058–1087, 1995. [22] C. Jacoboni and L. Reggiani, “The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials,” Rev. Mod. Phys., vol. 55, p. 645, 1983. [23] J. Tang and K. Hess, “Theory of Hot Electron Emission from Silicon into Silicon Dioxide,” J. Appl. Phys., vol. 54, pp. 5145-5151, 1983. [24] L. Keldysh, “Concerning the theory of impact ionization semiconductors,” Sov. Phys. JEPT, vol. 21, p. 1135, 1965. [25] C. Huang, et al., “Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method,” TED, p. 2562, 1992. [26] T. S. Liou, T. Wang and C. Y. Chang, “Analysis of high-field hole transport characteristics in Si1–xGex alloys with a bond orbital band structure,” J. Appl. Phys., vol. 79, p. 259, 1996. [27] D. L. Kencke, et al., “The Origin of Secondary Electron Gate Current: A Multiple-stage Monte Carlo Study for Scaled, Low-power Flash Memory,” IEDM, p. 889, 1998. [28] K. M. Chu and D. L. Pulfrey “An Improved Model for Metal-Insulator-Semiconductor Tunnel Junction,” TED, vol. 35, p. 1656, 1998. [29] T. H. Ning, C. M. Osbum and H. N. Yu, “Emission probability of hot electrons from silicon into silicon dioxide,” J. Appl. Phys., vol. 48, p. 286, 1977.
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