臺灣博碩士論文加值系統

　　本文主要研究台灣半導體產業及其垂直結構上游、中游及下游各個層次之生產力的影響因素。同時，探討上游、中游及下游三方角色上，其研發創新能力除了對廠商本身創造直接效益，是否也能在產業內因研發有垂直外溢效果而受惠，進而提高生產力。

　　本實證研究對象範圍為半導體產業上市上櫃的公司。研究期間為1998年至2005年。所採用之原始資料皆取自「台灣經濟新報資料庫」(TEJ)。估計方法採用傳統Panel Data估計方法。包括Pooling data、固定效果(fixed effect)及隨機效果(random effect)。並且以Hausman(1978)來檢定出最適合本實證的估計方法。


　　本文實證結果：1.整個半導體產業而言，薪資及資本對生產力為顯著正相關，研發和外溢效果呈替代關係。2.上游廠商的薪資、資本及研發對生產力為顯著正相關，水平外溢效果為顯著負相關，研發和外溢效果呈替代關係。3.中游廠商的資本、水平外溢及垂直(上游至中游)外溢效果對生產力為顯著正值，研發則呈顯示負相關。4.下游廠商的薪資、資本、研發、及垂直(上游對下游)外溢效果對生產力為顯著正相關，水平外溢效果為顯著負相關，研發和垂直(上游對下游)外溢效果交叉項呈替代關係。

This thesis attempts to explore the impact of R&D on the productivity of upstream, medstream and downstream firms of Taiwan’s semiconductor industry and its vertical structure.

Using the data base of Taiwan Economic Journal from the year 1998 to 2005.This thesis adopt panel data estimation methods, including pooling data, the fixed effect and the random effect technique. Hausman test is used to determine the appropriate estimation method in the empirical study.

The empirical results are listed as follows.
1.For the industry, salary and capital have a significant positive impact on productivity. R&D and horizontal spillover tend to be substitute.
2.For upstream firms, salary, capital and R&D have a significant positive impact on productivity. Horizontal spillover has a significant negative impact. R&D and horizontal spillover tend to be substitute.
3.For medstream firms, capital, horizontal spillover and vertical spillover (upstream to medstream) have a significant positive impact on productivity. R&D has a significant negative impact.
4.For downstream firms, salary, capital, R&D and vertical spillover (upstream to downstream) have a significant positive impact on productivity. Horizontal spillover has a significant negative impact. R&D and vertical spillover (upstream to downstream) tend to be
substitute.

目 錄
第一章 緒論1
第一節 研究動機與目的1
第二節　 研究方法2
第三節 本文架構3

第二章 台灣半導體產業垂直結構之上中下游產業概況4
第一節　　上游IC設計業6
第二節　　中游IC 製造業9
第三節　　IC 封裝及測試業13

第三章　　文獻回顧與探討15
第一節　　研究發展與生產力相關文獻16
第二節　　研究發展外溢與生產力相關文獻18
第三節　　垂直研發外溢於產業內相關文獻21

第四章　　實證模型與變數說明24
第一節　　模型設定24
第二節 估計方法34
第三節 資料來源與變數說明 37

第五章　　實證結果46
第一節　　整個半導體產業之實證結果46
第二節　　半導體產業上游之實證結果51
第三節　　半導體產業中游之實證結果56
第四節　　半導體產業下游之實證結果61

第六章　　結論與建議66
第一節　　結論66
第二節　　後續研究建議68

參考文獻69
中文部份
　 英文部份

中文部份

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2.楊志海、陳忠榮（2001），研究發展、技術引進與專利一般動差於可數追蹤資料的應用，＜經濟論文叢刊＞，29：1，69-87。

3.楊志海、陳忠榮（2002），研究發展、專利與生產力－台灣製造業的實證研究，＜經濟論文叢刊＞，30：1，28-47。

4.蔡光第、楊浩彥（1996），多層次巢覆式R&D外溢效果與其對台灣製造業不同科技部門之貢獻，＜經濟論文叢刊＞，24：1，29-60。

5.蔡蕙安、陳致綱 (2002)，研究發展外溢之產出成長效果與動態調整過程－台灣電力電子業之實證研究，＜人文及社會科學集刊＞，14：3，289-327。


英文部份

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