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研究生:陳奎霖
研究生(外文):Kuei-Ling Chen
論文名稱:應用於薄膜電晶體液晶顯示器面板之氮化矽成膜及電漿蝕刻技術
論文名稱(外文):Technologies of Silicon Nitride Growth and Plasma Etching for Applications of TFT LCD Displays
指導教授:賴永齡賴永齡引用關係
指導教授(外文):Yeong-Lin Lai
學位類別:碩士
校院名稱:國立彰化師範大學
系所名稱:機電工程學系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:69
中文關鍵詞:階梯覆蓋能力蝕刻輪廓蝕刻率選擇比
外文關鍵詞:Step CoverageProfileEtching RateSelectivity
相關次數:
  • 被引用被引用:1
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  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
隨著網際網路與無線電通訊技術的急遽發展,資訊化漸漸普及於個人,因此可攜式資訊產品,如筆記型電腦、行動電話、數位相機、及個人數位助理等,均快速發展與成長。由於液晶顯示器具有薄型化、輕量化、低耗電量、無輻射污染、且能與半導體製程技術相容等優點,產品之應用更呈多樣化的成長。由早期小尺寸面板的STN LCD到今日TFT LCD的普及,包含LTPS、OLED、及其他顯示技術的迅速發展,顯示技術涵蓋材料、設備、製程、產品特性等諸多層面的開發,顯示技術的發展真可謂是一日千里。
本研究為TFT LCD Array標準五道光罩製程中,對於氮化矽成膜及蝕刻提出製程改善方式,其中,在薄膜沉積及蝕刻製程完成後,所得到的結果(包含蝕刻率、均勻度、關鍵尺寸、蝕刻輪廓、選擇比),將直接影響下一道光罩製程中之薄膜沉積是否能成功覆蓋,而不會造成缺陷的產生,且於完成TFT成品後,電性及良率能符合產品需求。
在製程改善設計完成後,經過氮化矽成膜及電漿蝕刻製程條件變動測試後,均能符合出蝕刻製程改善要求,提升產品良率;所以本研究能確實符合TFT Array標準製程的要求。
Along with the rapid development of internet and wireless communication technologies, the information for individuals is getting popular. Portable information products, such as notebooks, mobile phones, digital cameras, PDAs, and so on, are all developing prosperously. Because the liquid-crystal display has the advantages of thin, lightweight, low electric consumption, no radiation pollution and good compatibility with semiconductor technology, its applications are diverse. From early STN LCD to nowadays TFT LCD, the display technologies, including LTPS, OLED, and other techniques and containing materials, equipments, processes, products areas, are progressing at a fast pace.
This research proposes the improvement methods of silicon nitride deposition and etching for the five-mask processes of TFT LCD Arrays. The thin film deposition and plasma dry etching results regarding to etching rate, uniformity, critical dimension, taper profile, and selectivity will directly affect the success of the following thin film deposition. The research completes the TFT products without any defects and with good electric properties and yields.
After completing the process improvement, the results of the change test of silicon nitride deposition and plasma etching can meet the requirements of the products. Therefore, this research can truly improve TFT array processes.
中文摘要 i
英文摘要 ii
謝誌 iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 緒論 1
1-1 簡介 1
1-2 研究動機與文獻回顧 3
第二章 TFT Array 製程理論基礎 8
2-1 TFT Array製程原理 8
2-2 靜電防護設計 14
2-3 薄膜電晶體特性要求 15
第三章 氮化矽薄膜成長與特性量測 18
3-1 氮化矽成膜製程基本原理 18
3-2 氮化矽成膜實驗參數設計 23
3-3 氮化矽成膜後特性結果測量 27
第四章 電漿蝕刻參數設計與機械性質量測 30
4-1 電漿蝕刻基本原理 30
4-2 電漿蝕刻實驗參數設計 38
4-3 蝕刻後結果測量 43
第五章 實驗設計製作 46
5-1 以DOE實驗設計法製作參數設定 46
5-2 氮化矽薄膜製作參數設定 47
5-3 電漿蝕刻製作參數設定 53
第六章 實驗結果與討論 58
第七章 結論 66
參考文獻 67
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