臺灣博碩士論文加值系統

在此論文中，我們以「有機金屬化學氣相沉積法」成長AlGaAs/InGaAs高電子移動率電晶體。此外，我們也使用了Au 與 Pt/Au 不同金屬閘極並使用硫化銨溶液對AlGaAs材料進行表面披覆處理，並研究對元件特性所造成的影響。
對AlGaAs材料而言，硫化處理能更進一步降低表面複合速度及表面態位密度，因此能得到較佳的金-半蕭特基接觸。
在室溫下，閘極尺寸為1.0 x 100 μ㎡時，使用Pt/Au閘極並做硫化處理的元件，其最大汲極飽和電流為329.4 mA/mm，最大轉導為249 mS/mm，閘-汲極兩端崩潰電壓為25 V。使用Au閘極並做硫化處理的元件，其最大汲極飽和電流為288 mA/mm，最大轉導為200 mS/mm，閘-汲極兩端崩潰電壓為21.8 V。我們同時也描述了元件的高頻特性，高頻雜訊特性和高頻功率特性。
與無硫化保護層的HEMT元件比較，採用硫化處理成長硫化保護層的HEMT可以提升元件的性能，使元件適合運用於高速與高功率方面的應用。

In this thesis, we propose AlGaAs/InGaAs/GaAs high-electron mobility transistors (HEMTs) grown by metalorganic chemical- vapor deposition (MOCVD). The HEMTs with different gate alloys, including Au and Pt/Au. Moreover, using the (NH4)2x solution to from the AlGaAs surface passivation are studied and demonstrated.
For AlGaAs material, the surface recombination velocity and surface states are reduced by sulfur passivation. Hence, the well-behaved interfaces between the epitaxial semiconductor and Schottky metals can be obtained.
The gate dimensions of HEMTs are 1.0 x 100 μ㎡ gate. The HEMT with Pt/Au gate alloys and sulfur passivation has a maximum saturation drain current density of 329.4 mA/mm, a maximum extrinsic transconductance of 249 mS/mm and a gate-to-drain breakdown voltage of 25 V. The HEMT with Au gate alloys and sulfur passivation has a maximum saturation drain current density of 288 mA/mm, a maximum extrinsic transconductance of 200 mS/mm and a gate-to-drain breakdown voltage of 21.8 V. Additionally, the temperature-dependent behavior, microwave performance, high freauency noise parameter and power characteristics are measured.
The improved performance shows that the studied HEMT with sulfur passivation layer has good potential for high speed and high power applications.

摘要
第一章 研究動機 1
第二章 高電子移動率電晶體之介紹 4
2-1 MOCVD 有機金屬化學氣相沉積 4
2-2 PHEMT結構的設計 5
2-2-1 未摻雜緩衝層 5
2-2-2 InGaAs擬晶通道層 5
2-2-3 未摻雜空間層 6
2-2-4 n 摻雜蕭特基層 6
2-2-5 n+ 摻雜覆蓋層 7
第三章元件結構與元件製程 7
3-1 元件結構 8
3-2 元件製程 9
3-2-1 Mesa isolation 10
3-2-2 Drain and source metallization 10
3-2-3 Gate contact formation 11
3-2-4 Sulfur Passivated 12
第四章 實驗結果與討論 14
4-1 室溫(300 K)下直流特性 14
4-1-1 電流密度與電壓變化的特性 15
4-1-2 異質轉導特性 15
4-1-3 兩端崩潰電壓特性 18
4-2 高頻特性 19
4-3 雜訊特性 21
4-4 功率特性 22
4-5 溫度變化下的直流特性 24
4-5-1 電流密度與電壓變化的特性 24
4-5-2 異質轉導特性 25
4-5-3 RF特性 27
4-6 綜合比較 29
第五章 結論 33
參考文獻 38
圖目錄
表目錄

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