臺灣博碩士論文加值系統

利用掃描穿隧顯微鏡和Z-V能譜術研究成長於銅(111)與銀(100)基板上的C60薄膜其高於費米能階與真空能階的電子結構。利用Z-V能譜術我們探測到C60的LUMO、LUMO+1、LUMO+2的能態，而且高於真空能階的LUMO+3能態亦被探測到。在更高能量部份的研究，我們發現在C60/銅(111)與C60/銀(100)兩個系統皆出現穿透共振（transmission resonance）的現象，並探討介面對於穿透共振出現的影響。
除此之外，我們發現C60可以在銅(111)表面形成四種不同下陷程度的單層薄膜。同樣地，利用Z-V能譜術研究這些C60薄膜的電性，進而探討不同下陷程度對C60薄膜的電性以及電子穿透率的影響。

We used scanning tunneling microscopy and Z-V spectroscopy to study the electronic structures of C60 films above the Fermi level and vacuum level, grown on Ag(100) and Cu(111) surfaces. At the range of the lower energy, we probe some unoccupied states of LUMO ~ LUMO+3 and image potential state on metal surface. At the range of the higher energy, the quantum phenomenon of the transmission resonance was found both on the C60/Ag(100) and C60/Cu(111) systems. The influences of C60/metal interface on the transmission resonance were studied as well.
We also observed a novel growth modes on C60/Cu(111) system. It is found that C60 can sink into Cu(111) surface with four different depth and the electronic structures of C60 films change with the depth of the sinking.

目錄致謝 I
摘要 III
Abstract V
目錄 VII
表目錄 XI
圖片索引 XIII

第一章 緒論 1
1.1 研究動機 1
1.2 背景介紹及文獻回顧 2
第二章 儀器及其工作原理 5
2.1 量子穿隧效應 5
2.2 STM之工作原理 8
2.2.1 掃瞄機制 8
2.2.2 掃描模式 10
2.3 局域電子態密度 12
2.4 掃描穿隧能譜術 13
2.5 穿透共振理論 15
第三章 實驗儀器與步驟 19
3.1 儀器介紹 19
（I）超高真空系統 21
（II）4.2K低溫恆溫槽 23
（III）STM掃描系統 24
（IV）避震系統 26
（V）樣品清潔及蒸鍍系統 27
（VI）電腦控制系統 31
3.2超高真空環境的製備 32
3.2.1 幫浦抽氣 32
3.2.2 烘烤腔體 32
3.2.3 逸氣 34
3.3 樣品製備 35
3.3.1 基板材料的特性 35
3.2.2 探針製作 36
3.2.3 樣品清潔 37
3.2.4 C60薄膜成長 38
3.4 軌跡-電壓能譜之量測 42
第四章 實驗數據與討論 45
4.1 利用Z-V能譜術量測C60之未填滿態 45
4.1.1 C60/銅(111) 45
4.1.2 C60/銀(100) 56
4.1.3 綜合比較與討論 64
4.2 高於真空能階之能譜量測 67
4.2.1 C60/銅(111) 67
4.2.2 C60/銀(100) 69
4.2.3 綜合比較與討論 72
4.3 C60於銅(111)之奇特成長模式 74
第五章 結論 83
參考文獻 85

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