電子構裝的技術中，BGA的封裝方式是目前業界較愛使用的封裝方式之一，而BGA錫球的配料由含鉛的63Sn-37Pb改為無鉛系列係目前發展趨勢。本實驗研究Sn-Ag-Cu系列焊料在以Au/Ni/Cu為基材之BGA板上迴焊、150℃時效後之介面反應及介金屬化合物成長行為，比較通電與未通電對銲錫接點的影響。
比較通電與未通電的BGA試片後，發現通入電流的接點介面IMC成長快速且不均勻，而未通電的BGA試片其介面IMC成長緩慢。探討其原因是因為通過電流的錫球溫度會因焦耳熱效應而提高，再加上電流的影響而加速IMC的成長。另介面IMC成長不均勻係因流經錫球內部各處的電流密度不均勻所致。再生成IMC的種類方面，通電錫球會在介面處先生成(Cu,Ni,Au)6Sn5再長出(Ni,Cu)3Sn4，未通電錫球則只會生成(Cu,Ni,Au)6Sn5。

一、前言 1
1.1 研究背景 1
1.2 球矩陣排列封裝（Ball Grid Array Package） 2
1.3 焊料 2
1.4 研究動機 3
二、文獻回顧 5
2.1接點介面反應 5
2.2焊料的脆性破壞 9
2.3 電流效應 10
三、實驗方法 12
3.1 實驗目的 12
3.2 試片準備 12
3.3 實驗步驟 15
3.3.1 高溫、通電時效處理 15
3.3.2 Cross Sectiong試片製作 17
3.4 儀器準備 17
3.5 試片分析 18
四、實驗結果 19
4.1 未通電錫球 19
4.1.1未通電錫球之IMC成長行為 19
4.1.2 介金屬化合物成分分析 20
4.1.3 各成份擴散行為 21
4.2 通電錫球 22
4.1.1通電錫球之IMC成長行為 22
4.2.2 介金屬化合物成分分析 23
4.2.3 各成份擴散行為 24
五、實驗討論 26
5.1 未通電錫球 26
5.2 通電錫球 26
六、實驗結論 30
七、參考文獻 32

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