隨著光學量測的元件精密度的進步，拉曼光譜的分析逐漸成為熱門的光學量測與材料分析的方法。因為拉曼光譜在材料分析上具有不破壞樣品、樣品製備容易、快速、低污染等優異的特性。氮化鎵—理想的藍光光電元件，具有寬的直接能隙，高的熱傳導性與化學穩定性等特性，是相當熱門的III-V族氮化合物半導體之一。本文以拉曼光譜為量測方式藉以分析成長於不同基版上的氮化鎵其材料結構上是否有差異存在。同時輔以光致螢光量測來做交叉比對，以確定拉曼光譜結果的正確性。

As the progress of the precision of optical analysis material, Raman spectra is developed as a popular optical and material analysis method.
The samples of Raman spectra are low population and prepared easily and fast. Raman spectra would not destroy the samples. GaN is an ideal blue light substrate and a popular nitrogen compound of semi-conductor in III-V group . The character of the GaN is it has a wild direct band gas, high thermal conductivity and high chemical stability. This study is focus on analyzing if there is any difference of the structure of GaN growing on the different substrates. It is compared with photoluminescence spectrum to make sure the accuracy of the result of Raman spectra.

中文摘要．．．．．．．．．．．．．．．．．．．．．．．．．i
英文摘要．．．．．．．．．．．．．．．．．．．．．．．．．ii
目錄．．．．．．．．．．．．．．．．．．．．．．．．．．．iii
圖目錄．．．．．．．．．．．．．．．．．．．．．．．．．．v
表目錄．．．．．．．．．．．．．．．．．．．．．．．．．．vii

第一章 序論．．．．．．．．．．．．．．．．．．．．．．．．1

第二章 實驗原理．．．．．．．．．．．．．．．．．．．．．．2
2-1拉曼光譜(Raman spectra) ．．．．．．．．．．．．．．．．2
2-1-1拉曼散射的古典理論．．．．．．．．．．．．．．． 3
2-1-2拉曼散射的時變微擾理論．．．．．．．．．．．．． 8
2-2晶體與獨立分子拉曼光譜的差異．．．．．．．．．．．． 13
2-3烏采結構(Wurtzite structure) ．．．．．．．．．．．．．．15
2-3-1聲子振動模式．．．．．．．．．．．．．．．．．． 16
2-4光致螢光光譜．．．．．．．．．．．．．．．．．．．． 17
2-4-1光致螢光光譜原理．．．．．．．．．．．．．．．．18

第三章 實驗儀器．．．．．．．．．．．．．．．．．．．．． 21

第四章 實驗結果．．．．．．．．．．．．．．．．．．．．．22

第五章 實驗分析．．．．．．．．．．．．．．．．．．．．．35

第六章 結論．．．．．．．．．．．．．．．．．．．．．．．44

參考資料及書目．．．．．．．．．．．．．．．．．．．．．．45

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