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研究生:黃聖文
研究生(外文):Sheng-Wen Huang
論文名稱:平臺式氮化鎵異質接面雙載子電晶體研製與分析
論文名稱(外文):Fabrication and characterization of mesa-type Gallium Nitride based heterojunction bipolar transisrors
指導教授:李明昌李明昌引用關係
指導教授(外文):Ming-Chang Lee
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:95
語文別:中文
論文頁數:63
中文關鍵詞:氮化鎵異質接面電晶體
外文關鍵詞:GaNHeterojunctionTransistor
相關次數:
  • 被引用被引用:1
  • 點閱點閱:237
  • 評分評分:
  • 下載下載:37
  • 收藏至我的研究室書目清單書目收藏:0
以氮化鎵材料作為光電元件是目前愈來愈的趨勢,而藍光塑膠光纖通訊是其中的一種可能應用。本實驗主要利用氮化鎵材料來製作出異質接面雙載子電晶體。在實際製作元件前,我們首先嘗試了氮化鎵材料的濕蝕刻,希望濕蝕刻的技術可以應用在實際元件的製成。最後實際製作元件並以直流分析與二次離子質譜儀來分析結果並且討論。
氮化鎵材料濕蝕刻主要利用光電化學濕蝕刻方法來進行n型氮化鎵材料的蝕刻,其中蝕刻的溶液為PH=11.0~14.0的氫氧化鉀溶液,濕蝕刻的光罩採用鈦/金(Ti/Au 30nm/300nm)和鈦/鋁/鎳/金(Ti/Al/Ni/Au 25nm/1250 nm/450 nm/550 nm)合金,以及使用尖峰波長為36.5nm之UV LED,最後測得由鈦/金光罩在PH=14.0 的氫氧化鉀溶液中可以蝕刻n 型氮化鎵,蝕刻深度為1.4um。
氮化鎵異質接面雙載子電晶體的製作,主要利用中央大學綦振贏老師實驗室所提供之試片所製作,所有的製成皆在中央大學微光電實驗室所進行。實驗中得到許多製成所需的條件數據。最後元件製成完利用直流分析儀HP4156A量測其直流特性,可測得最主要的電流增益值為1.21。
There are more and more applications based on GaN related optoelectronics and plastic fiber communication happens to be one of the potentials. This experiment makes use of GaN material to make out heterojunction bipolar transistors mainly. Before making the device actually, we have tried the wet etching of the GaN at first, hope the wet etching technology that etches can be applied to the making of the real device. Finally , we made the device actually and analyzed and discussed by secondary ion mass spectrometer and semiconductor parameter analyzer.
Wet etching focused on applying UV-LEDs to n-type GaN
PhotoElectroChemical (PEC) wet etching. In our experiment, KOH
solutions with PH values lying between 11.0 and 14.0 are used as etchants. We also examined both Ti/Au 30nm/300nm andTi/Al/Ni/Au 25nm/125nm/45nm/55nmΑcontacts as wet etchingmasks. Finally, we
have demonstrated that UV-LED made from Nichia with 365 nm peak
wavelength can be used to etch the n-GaN and stop on top of the p-GaN in a PH=14.0 KOH solution and the etching depth is around 1.4μm.
The wafer were grown by Microwave & Optoelectronic Devices Laboratory ,Prof. Jen-Inn Chyi , ncu , and all the fabrication were in Compound Semiconductors Lab , ncu .We got a lot of necessary condition data in the experiment .Finally, we got a very important parameter, current gain, 1.21 by using semiconductor parameter analyzer HP4156A.
摘要 I
ABSTRACT II
誌謝 III
目錄 IV
圖目錄 VII
第一章 序論 1
1.1 前言 1
1.2 研究動機 2
第二章 氮化鎵異質接面雙載子電晶體原理 5
2.1 GAN材料特性介紹 5
2.2 GAN HBT基本結構介紹 6
2.3 GAN HBT原理說明 8
2.4 目前已發展GAN HBT之簡介 9
第三章 濕蝕刻 15
3.1 濕蝕刻的優缺點 15
3.1.1 光電化學濕蝕刻 15
3.2 濕蝕刻原理 15
3.2.1 光電化學濕蝕刻法對於光源的限制 15
3.2.2 濕蝕刻N型氮化鎵 16
3.2.3 擴散或反應限制蝕刻 19
3.2.4 水合作用 19
3.2.5 濕蝕刻與晶格缺陷 21
3.2.6 濕蝕刻速率與金屬光罩 21
3.3 實驗設計 22
3.4 實驗量測及分析 23
3.5 結論 27
第四章 元件製成 29
4.1 GAN HBT元件結構 29
4.2 元件製成 30
4.3 元件佈局 46
第五章 氮化鎵異質介面雙載子電晶體特性量測及分析 47
5.1 直流特性量測 47
5.2 二次離子質譜儀 (SECONDARY ION MASS SPECTROMETER )分析 54
第六章 結論及未來研究方向 57
6.1 結論 57
6.2 未來研究方向 58
參考文獻 60
STUDY 62
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