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研究生:林明昌
研究生(外文):Ming-Chang Lin
論文名稱:去除犧牲層之Air-Gap銅導線鑲嵌結構
論文名稱(外文):Air-Gap Cu Damascene Structure by Removing Sacrificial Layer
指導教授:葉鳳生
指導教授(外文):Fon-Shan Huang
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:59
中文關鍵詞:銅連接線鑲嵌結構空氣介電材料犧牲層
外文關鍵詞:Cu interconnectdamasceneair-gapsacrificial layer
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本論文的目的有二。首先將整合犧牲層HSQ、擴散阻障層TaN、附著層Ta、銅之電化學電鍍、化學機械研磨等製造出銅導線鑲嵌結構;其次將利用微電子機械系統(MEMS)之技術在一介電材料覆蓋下剝除HSQ以製作出Air-gap結構,量測導線的電阻率並討論之。
犧牲層的部分,將HSQ(hydrogen silsesquioxane)與溶劑MIBK以2:1的比例混和後旋轉塗佈於蝕刻停止層氮化矽上,以350℃預烤3分鐘後形成之HSQ薄膜是很好的犧牲層材料。這是由於BOE溶液會從HSQ與其他介電材料間的介面開始蝕刻,而能方便而快速地剝起HSQ膜。100�眱p的Ta與100�眱p的TaN分別被用來當作附著層與擴散阻障層。在以銅之電化學電鍍填充溝槽後,以不傷害到樣品為原則,使用幾種不同的化學機械研磨參數以去除多餘的Cu/Ta/TaN膜,而完成銅導線鑲嵌結構。
接下來利用電漿輔助化學氣相沈積方式生長4000�硒嶀う蕭之@為上方覆蓋的介電層,在氮化矽膜上沿著導線以CF4進行RIE開出長/寬為2.5μm/1.5倍導線線寬,間距為10μm之蝕刻窗口,其後以BOE溶液浸泡完成Air-gap銅導線鑲嵌結構。高解析度光學顯微鏡與SEM將被用來觀察此結構。
本實驗利用精密半導體參數分析儀HP 4156A配合探針座與導電式原子力顯微鏡(conductive AFM)兩種方式去量測電阻率,此兩種不同方式的量測結果將互相比較討論。
Two objectives are involved in the thesis. First, the fabrication of air-gap Cu damascene structure integrated with sacrificial layer HSQ, diffusion barrier TaN, adhesion layer Ta, electrochemical plating (ECP) of copper, and chemical mechanical polish (CMP) is demonstrated. Second, the air-gap formation by HSQ removal through a dielectric cap using MEMS technique is investigated, and the resistivity of copper lines is also studied.
HSQ with MIBK at ratio 2:1 was spun on etch stop layer SiNx. The HSQ film pre-baked at 350℃ for 3 minutes was a good sacrificial layer which could easily and quickly be removed from the interface with other dielectric materials by BOE solution treatment. 100�� Ta and 100�� TaN served as the adhesion and diffusion barrier layer, respectively. After trench filling by copper ECP, several CMP parameters were applied to remove unnecessary Cu/Ta/TaN without damaging the samples, and Cu damascene structure was done.
Then 4000�� SiNx deposited by PECVD was used as the dielectric cap. Etching windows with 1.5x line width / 2.5μm (window width / window length) on SiNx were formed by RIE with CF4 etchant and separated with 10μm along Cu damascene lines. The air-gap Cu damascene structure will be fabricated by BOE etching process. High resolution OM and SEM revealed the structure.
The resistivity of Cu lines was measured by HP 4156A with a probe station and Conductive AFM. The measurement results of the two approaches were discussed in the thesis.
第一章 序論 . . . . . . . . . . . . . . . . . . . . . . 01

第二章 犧牲層HSQ性質 . . . . . . . . . . . . . . . . . 05
2-1 HSQ之結構 . . . . . . . . . . . . . . . . . . . . 05
2-2 HSQ之剝除 . . . . . . . . . . . . . . . . . . . . 06

第三章 量測儀器與原理 . . . . . . . . . . . . . . . . . 07
3-1 α-step . . . . . . . . . . . . . . . . . . . . . 07
3-2 電阻量測與電阻率分析(HP 4156A). . . . . . . . . 08
3-3 原子力顯微鏡(AFM) . . . . . . . . . . . . . . . 09
3-4 掃瞄式電子顯微鏡(SEM) . . . . . . . . . . . . . 11

第四章 實驗 . . . . . . . . . . . . . . . . . . . . . . 13
4-1 犧牲層HSQ . . . . . . . . . . . . . . . . . . . . 13
4-1-1 犧牲層HSQ之製備 . . . . . . . . . . . . . . . 13
4-1-2 犧牲層HSQ之圖形定義蝕刻 . . . . . . . . . . . 14
4-1-3 HSQ側向剝除實驗 . . . . . . . . . . . . . . . 14
4-2 化學機械研磨 . . . . . . . . . . . . . . . . . . 15
4-2-1 Cu之化學機械研磨 . . . . . . . . . . . . . . 15
4-2-2 Ta/TaN之化學機械研磨 . . . . . . . . . . . . 16
4-3 Air-gap銅導線鑲嵌結構製作 . . . . . . . . . . . . 17
4-3-1 銅導線鑲嵌結構製作 . . . . . . . . . . . . . 17
4-3-2 Air-gap結構之形成 . . . . . . . . .. . . . . 18
4-4 銅導線電阻率量測 . . . . . . . . . . . . . . . . 19
4-4-1 精密半導體參數分析儀之電性量測 . . . . . . . 20
4-4-2 原子力顯微鏡之電性量測 . . . . . . . . . . . 20
4-4-3 Size effect對阻率影響之分析方法 . . . . . . . 21

第五章 實驗結果與討論 . . . . . . . . . . . . . . . . . 36
5-1 HSQ側向剝除實驗結果 . . . . . . . . . . . . . . . 36
5-2 銅導線鑲嵌結構觀測 . . . . . . . . . . . . . . . 36
5-3 Air-gap結構製作結果 . . . . . . . . . . . . . . . 38
5-4 電阻率量測結果 . . . . . . . . . . . . . . . . . 40
5-4-1 精密半導體參數分析儀之電性量測討論 . . . . . 40
5-4-2 原子力顯微鏡之電性量測討論 . . . . . . . . . 42
5-4-3 Size effect對阻率影響之分析 . . . . . . . . . 43

第六章 結論 . . . . . . . . . . . . . . . . . . . . . . 55

參考文獻 . . . . . . . . . . . . . . . . . . . . . . . . 57
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