臺灣博碩士論文加值系統

本論文運用射頻磁控濺鍍系統，沈積多層銦鋅氧化物(indium zinc oxide, IZO)，並於中增加金屬金(Au)薄膜層，使得透明導電膜變成IZO- Au多層結構薄膜。在一定的透光下，能有效的降低電阻率。吾人利用改變IZO-Au多層構的層數分別為3、5、7、9層，總厚度仍然控制在210nm，並進行薄膜之光電分析量測。經由實驗比較發現，在IZO-Au最佳總層數為5層時，在可見光有61.8％的平均穿透率、和0.014Ω-cm的電阻率。
於光感測元件製作方面，吾人首先製作矽基板在矽晶圓上成長SiO2/ p+- Poly-Si0.82Ge0.18/ p-Poly-Si0.82Ge0.18/ i-Poly-Si0.82Ge0.18/ n- Poly-Si0.82Ge0.18/ n+-poly Si0.82Ge0.18，最後再將最佳結構銦鋅氧化物鍍製在頂層。經由實驗結果，具5層最佳IZO-Au薄膜結構之光感測研發元件，當於固定照光度與逆向偏壓分別為100W、與14.95 V時，其研發元件之光電流、響應係數、與量子效率，分別為1029.9μA、0.66A/W、與60.4%；然鍍製於傳統單層IZO薄膜之光感測器，其光電流、響應係數、與量子效率，分別為309.9μA、0.15 A/W、與13.96%。相較於傳統單層IZO薄膜，本研發5層IZO-Au膜之光感測器，其光電流可提升1029.9μA、響應係數提升0.51 A/W、量子效率提升46.44%。因此，本研發元件之光電分析結果，可提供業界參考。
關鍵字：射頻磁控濺鍍系統、銦鋅氧化物、光感測器、量子效率。

In this thesis, we used RF Magnetron Sputtering System to deposit indium zinc oxide (IZO). The Au film layer was added on IZO glass substrate. The transparent conductive film changed to IZO-Au multi-layer film, which could effectively reduce the electrical resistivity under certain light transmission.
Keeping the deposited thickness of multi-layer IZO-Au at 210nm, we changed the layers to 3, 5, 7 and 9 to conduct the photoelectric analysis. It is found out in the empirical comparisons that 5-layer is the optimal structure for IZO-Au multi-layer film. Its average transmittance in the visible light is 58.8%, and the resistivity is 0.014Ω-cm.
For the fabrication of photosensor component, we made silicon substrate on the wafer SiO2/ p+- Poly-Si0.82Ge0.18/ p-Poly-Si0.82Ge0.18/ i-Poly-Si0.82Ge0.18/ n- Poly-Si0.82Ge0.18/ n+-poly Si0.82Ge0.18. The IZO-Au was deposited with optimum structure on the top layer. The experimental results showed that the photocurrent, response coefficient and quantum efficiency of the photosensor with optimal 5-layer IZO-Au structure were respectively 1029.9μA、0.66A/W、and 60.4%, under the fixed illuminance (100W) and reverse bias (14.95V) respectively. The traditional single-layer IZO film was plated on the photosensor. Its photocurrent, response coefficient and quantum efficiency were respectively 309.9μA、0.15 A/W、and 13.96% . Comparing to traditional single-layer IZO film and the photosensor of 5-layer IZO-Au film, photo-electric characteristics could be promoted to 1029.9μA, 0.51A/W, and 46.44% of the photocurrent, response coefficient and quantum efficiency. Therefore the photoelectric analysis result of the photosensor developed by this research could provide some references for the industry.
Keywords: RF Magnetron Sputtering System, IZO, photosensor, quantum efficiency

Chapter 1 Introduction……………………………………………1

Chapter 2 Fundamental Principles of IZO and p-i-n…………4

2-1 Principles of IZO……………………………………………4
2-1-1 Optical principles of IZO film……………………………5
2-1-2 Electric principles of IZO film…………………………6
2-1-3 Optical and electric principles of IZO-Au……………6
2-2 p-i-n photosensor..…………………………………………6
2-2-1 Principles of p-i-n photosensor…………………………6
2-2-2 Photo current and dark current……………………………8
2-2-3 Quantum efficiency……………………………………………9
2-2-4 Responsivity……………………………………………………9
2-3 Calculation of optical film refractive index and Extinction coefficient………………………………………………10

Chapter 3 Experiment and Measuring Equipment………………12

3-1. Experimental procedures……………………………………12
3-1-1 Cleaning glass substrate…………………………………12
3-1-2 Deposition steps of IZO and IZO-Au……………………13
3-1-3 Cleaning wafer………………………………………………17
3-1-4 Fabrication procedures of p-i-n photosensor…………17
3-2 Experimental equipment…………………………………………20
3-2-1 Low Pressure Chemical Vapor Deposition (LPCVD)………20
3-2-2 Anneal…………………………………………………………22
3-2-3 Ion implantation……………………………………………23
3-2-4 Exposure system………………………………………………23
3-2-5 RF sputtering machine………………………………………25
3-3 Measuring equipments……………………………………………25
3-3-1 Scanning Electron Microscope (SEM)……………………26
3-3-2 Spectrometer…………………………………………………27
3-3-3 X-ray diffractor ……………………………………………28
3-3-4 Atomic Force Microscopic (AFM)…………………………29
3-3-5 Energy dispersive x-ray spectrometer (EDS)…………30
3-3-6 KEITHLEY I-V curve scanner…………………………………31

Chapter 4 Results and Discussions……………………………32

4-1 Analysis of single layer IZO and Au film………………32
4-1-1 Transmittance…………………………………………………32
4-1-2 Resistivity……………………………………………………37
4-1-3 Surface microstructure……………………………………38
4-1-4 X-ray Diffraction analysis.………………………………40
4-1-5 X-ray Dispersive X-ray Spectrometer analysis………41
4-1-6 Atomic force microscopic analysis………………………42
4-2 Analysis of Multi-layer IZO-Au film……………………43
4-2-1 Transmittance…………………………………………………43
4-2-2 Resistivity..…………………………………………………44
4-2-3 Atomic force microscopic analysis………………………45
4-3 Analysis of applying IZO-Au to photosensor …………48
4-3-1 I-V curve analysis…………………………………………48
4-3-2 Responsivity…………………………………………………52
4-3-3 Quantum efficiency…………………………………………54
Chapter 5 Conclusions……………………………………………57
5-1. Summary…………………………………………………………57
5-2. Future prospects………………………………………………58

References………………………………………………………………59

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