|
[1] S. A. Healy and M. Green,“Efficiency enhancements in crystalline silicon solar cells by alloying with germanium”, Solar Materials and Solar Cells28, 273~284 (1992) [2] J. M. Hartmann, B. Gallas, J. Zhang, J. J. Harris,“Gas-source molecular beam epitaxy of SiGe virtual substrates: II. Strain relaxation and surface morphology”, Semicond. Sci. Tech.15, 300-377 (2000) [3] D. J. Paul,“The physics, material and devices of silicon-germanium technology”, Physics World vol.13, 27 (2000) [4] F. Schäffler, “Review article:High-mobility Si and Ge structures”, Semicond. Sci. Tech.12, 1515 (1997). [5] M. E. Levinshtein, S. L. Rumyantsev, M. S. Shur,“Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe”,Wiley, New York, (2001) [6] R. People,“Indirect band gap of coherently strained GexSi1-x bulk alloys on <001> silicon substrates”,Phys. Rev. B.32, 1405 (1985) [7] Ben G. Streetman and Sanjay Kumar Banerjee,“Solid state electronic devices”, Pearson/Prentice Hall, (2006) [8] D. M. Chapin, C. S. Fuller, and G. L. Pearson,“A New Silicon p-n Junction Photocell for Converting Solar Radiation into Electrical Power”,J. Appl. Phys.,25,676 (1954) [9] 莊嘉琛,“太陽能工程-太陽電池篇,”全華書版社 [10] M. A. Green , K. Emery , D. L. King , Y. Hishikawa , W. Warta,“Solar cell efficiency tables (version 29)”,Prog. Photovolt: Res. Appl.,15,35-40 (2007) [11] http://www.udel.edu/igert/pvcdrom/index.html [12] S.M. Sze,“Physics of Semiconductor Devices”,2nd ed., Wiley, New York, (1981) [13] S.O. Kasap,“Optoelectronics and photonics : principles and practices”,Upper Saddle River, NJ : Prentice Hall, (2001) [14] Donald A. Neamen,“Semiconductor physics and devices : basic principles”,3rd ed., Boston : McGraw-Hill, (2003) [15] K. Saida, J. Poortmansa, M. Caymaxa, R. Looa, A. Daamib, G. Bremondb,O.Krugerc, M. Kittlerc,“High quality , relaxed SiGe epitaxial layers for solar cell application”,Thin Solid Films,337,85-89 (1999) [16] 蔡進譯: 超高效率太陽電池¾從愛因斯坦的光電效應談起物理雙月刊(廿七卷五期)2005年10月 [17] Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki,and K. Nakajima,“Enhanced quantum efficiency of solar cells with self-assembled Ge dots stocked in multilayer structure”,Appl. Phys. Lett.83,1258-1260 (2003) [18] A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki,and K. Nakajima,“Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer”,Appl. Phys. Lett.84,2802-2804 (2004) [19] Johan F. Nijs,“Low cost Industrial Technologies of Crystalline Silicon Solar Cell”,Proceedings of the IEEE,85,5,711-715 (1997) [20] B. Bitnar,“Silicon ,germanium and silicon/germanium photocells for thermophotovoltaicsapplications”,Semicond. Sci. Tech.18, 221-227 (2003) [21] 張俊彥,李秉傑,劉文超,雷添福,林浩雄,陳振芳,科儀新知, 13, 4, 25 (81). [22] M.A. Herman and H. Sitter, “Molecular Beam Epitaxy Fundamentals and Current Status”,Springer (1996). [23] 李嗣涔, 管傑雄, 孫台平,“半導體元件物理”,三民書局 (1995) [24] Ohring Milton, Materials Science of Thin Film, 2nd ed., Academic Press, 358 (2002) [25] Eaglesham D. J., and M. Cerullo,“Dislocation-Free Stranski-Krastanov growth of Ge on Si(100)”,Phys. Rev.B.64, 1943 (1990) [26] K. Said, J. Poortmans, M. Caymax, J. F. Nijs, L. Debarge, E. Christoffel, and A. Slaoui,“Design, Fabrication, and Analysis of Crystalline Si-SiGe Heterostructure Thin-Film Solar Cells,” IEEE Trans. Electron Devices, vol.46, no.10 (1999) [27] S.M. Sze,“Semiconductor Device, physics and technology”,New York, Wiley,1985
|