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[1] A. D. Arnold, P. E. Castro, T. K. Hatwar, M. V. Hettel, P. J. Kane, J. E. Ludwicki, M. E. Miller, M. J. Murdoch, J. P. Spindler, S. A. Van Slyke, K. Mameno, R. Nishikawa, T. Omura, S. Matsumoto, J. SID 13, 525 (2005). [2] Ho-Kyoon Chung, Ki-Yong Lee, Seong Taek Lee, J. SID 14, 49 (2006). [3] M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, IEEE Trans. Electron Devices 48, 845 (2001). [4] Y. Hong, J. Y. Nahm and J. Kanicki, IEEE Tran. Electron Device, 10, 16 (2004). [5] Y. C. Lin and H. P David Shieh, IEEE Tran. Electron Device, 51, 1037(2004). [6] J. H. Kim, Y. Hong and J. Kanicki, IEEE Tran. Electron Device, 7, 451(2004). [7] C. Hosokawa et al., SID, p. 7, 1998. [8] C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987). [9] M.-H. Lu, M. S. Weaver, T. X. Zhou, M. Rothman, R. C. Kwong, M. Hack, and J. J. Brown, Appl. Phys. Lett. 81, 3921 (2002). [10] H. Aziz, Y.-F. Liew, H. M. Grandin, and Z. D. Popovic, Appl. Phys. Lett. 83, 186 (2003). [11] C.-J. Yang, C.-L. Lin, and C.-C. Wu, Appl. Phys. Lett. 87, 143507 (2005). [12] W. E. Spear and P.G. LeComber, Philos. Mag., 33, 935 (1976). [13] W. E. Spear and P.G. LeComber, Solid state Comm., 17, 1193(1975). [14] D. E. Carlson, U.S. Patent 4,064, 521, (1977a). [15] D. E. Carlson,, and C. R. Wronski, Appl. Phys. Lett. 28, 671, (1976). [16] A. Madan, J. McGill, W. Czubatyj, J. Yang, and S.R. Ovshinsky, Appl. Phys. Lett. 37, 826, (1980). [17] G. Nakamura, K. Sato, H. Kondo, Y. Yudimoto. And K. Shirahato, Eur. Community Photovoltaic Sol. Energy Conf. 4 th Stressa. Italy, p. 616. D. Reidil. Doredrect. Holland.(1982). [18] D. E. Carlsont, “Semiconductors And Semimetals,” Vol 21, Part D , Chapter 2, Academic Press. Inc. (1984).
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