臺灣博碩士論文加值系統

本論文研究利用化學氣相沈積法經由VLS成長機制來成長電場導向及自組裝之未摻雜的矽奈米線。並觀察到矽奈米線會受到外加於相鄰電極的局部電場影響，而呈現岀較有條理的導向成長結果。由電場模擬可以合理解釋兩種電極結構所造成矽奈米線之不同的生長結果。最後，我們成功利用電場導向成長製備矽奈米線，並可直接量測矽奈米線之電流電壓特性。

Electric-field-directed growth and self-assembly of undoped silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent electrode structures. It leads to improve silicon nanowires alignment and organization while transcending a trench. Simulation of the electric field distribution under two different electrode structures can reasonably explain the different growth results. Finally, the electric-field-directed growth of the undoped silicon nanowires was achieved successfully. The results of the in-situ electrical measurement of as-grown silicon nanowires are also presented.

Chapter 1 Introduction....................................1
Chapter 2 Experimental....................................5
2.1 Deposition system.....................................5
2.1.1 Low pressure chemical vapor deposition (LPCVD)......5
2.1.2 Plasma Enhanced Chemical Vapor Deposition (PECVD)...5
2.2 Preparation..........................................11
2.3 Deposition Procedures................................13
2.4 Measurement Techniques...............................14
2.4.1 Current – Voltage characteristics.................14
2.4.2 Thickness Measurement of buffer SiO2...............14
2.4.3 Thickness Measurement of Metal electrodes..........14
2.4.4 Characterization of Silicon Nanowires..............14
Chapter 3 The Electric-Field-Directed Growth of Silicon Nanowires................................................15
3.1 Vapor-Liquid-Solid (VLS) Mechanism...................17
3.1.1 VLS- assisted silicon nanowire growth..............17
3.1.2 The role of the metal catalyst.....................22
3.2 Electric-Field-Directed Growth of Silicon Nanowires..23
3.3 Sample Preparation...................................27
3-4 Results and Discussion...............................39
3.4.1 The growth of undoped SiNWs aligned by the electric field on the structure A-1...............................39
3.4.2 The growth of undoped SiNWs aligned by the electric field on the structure A-2...............................48
3.4.3 The growth of undoped SiNWs aligned by the electric field on the structure B.................................56
Chapter4 Direct Electrical Measurement of the as-grown Silicon Nanowires........66
4.1 The electrical measurement of silicon nanowires......66
4.2 Results and discussion...............................68
4.2.1 The direct electrical measurement of as-grown silicon nanowires on the structure A-2...................68
4.2.2 The direct electrical measurement of as-grown silicon nanowires on the structure B.....................72
Chapter 5 Conclusions....................................74
Reference................................................76
Appendix A 2D Finite Difference Method...................81

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