|
[1.1] Hiroyo Ogawa, “Application of mmW-based PHYs,” IEEE 802.15 Working Group for Personal Area Networks, Document IEEE 802.15-04/118r0, March 2004.
[1.2] E. K. Smith and J. W. Waters, Microwave Attenuation and Brightness Temperature Due lo the Gaseous Atmosphere – a Comparison of JPL and CCIR values, JPL Pub. 81-81, Aug. 1981.
[1.3] B. Razavi, "A mm-Wave CMOS Heterodyne Receiver with On-Chip LO and Divider,” ISSCC Dig. Tech. Papers, pp. 188-189, Feb. 2007.
[1.4] S. Emami et al, "A Highly Integrated 60GHz CMOS Front-End Receiver,” ISSCC Dig. Tech. Papers, pp. 190-191, Feb. 2007.
[1.5] C.H. Wang et al, "A 60GHz Low-Power Six-Port Transceiver for Gigabit Software-Defined Transceiver Applications", ISSCC Dig. Tech. Papers, pp. 192-193, Feb. 2007.
[1.6] C. Lee and S.I. Liu, "A 58-to-60.4GHz Frequency Synthesizer in 90nm CMOS,” ISSCC Dig. Tech. Papers, pp. 196-197, Feb. 2007.
[1.7] IEEE 802.15 WPAN Millimeter Wave Alternative PHY Task Group 3c (TG3c); http://www.ieee802.org/15/pub/TG3c.html
[2.1] Behzad Razavi,"A 60-GHz CMOS Receiver Front-End", IEEE J. Solid-State Circuits, vol. 41, no. 1, pp.17–22, Jan. 2006.
[2.2] J. Lee and B. Razavi, “A 40 GHz frequency divider in 0.18 μm CMOS technology,” in Symp. VLSI Circuits Dig. Tech. Papers, June 2003, pp.259–262.
[2.3] H.-D.Wohlmuth and D. Kehrer, “A high sensitivity static 2:1 frequency divider up to 27 GHz in 120 nm CMOS,” in Proc. Eur. Solid-State Circuits Conf., Firenze, Italy, Sept. 2002, pp. 823–826.
[2.4] H.Wu and A. Hajimiri, “A 19 GHz, 0.5mW, 0.35 μmCMOS frequency divider with shunt-peaking locking-range enhancement,”in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2001, pp.412–413, 471.
[2.5] Chinh H. Doan, Sohrab Emami, Ali M. Niknejad, and Robert W. Brodersen,”Millimeter-Wave CMOS Design”, IEEE J. Solid-State Circuits, vol. 40, no. 1,pp.144–155, Jan. 2005
[2.6] Cheung, T.S.D.; Long, J.R, ” Shielded passive devices for siliconbased monolithic microwave and millimeter-wave integrated circuits”, IEEE J. Solid-State Circuits, vol.41, no. 5, pp.1183–1200,May. 2006
[2.7] B. Razavi, “A study of injection locking and pulling in oscillators”, IEEE Journal of Solid State Circuits, vol. 39, pp. 1415-1424, Sep. 2004.
[2.8] Marc Tiebout, "A CMOS Direct Injection-Locked Oscillator Topology as High-Frequency Low-Power Frequency Divider", IEEE J. Solid-State Circuits, vol. 39, No. 7 pp. 1170–1174, July. 2004.
[3.1] E. Normann, “The inductance-capacitance oscillator as a frequency divider,”in Proc. IRE, vol. 24, Oct. 1946, pp. 799–803.
[3.2] A. Rofougaran et al., “A 900 MHz CMOS LC oscillator with quadrature outputs,”in IEEE ISSCC Dig. Tech. Papers, Feb. 1996, pp. 392–393.
[3.3] J. Kim and B. Kim, “A low phase noise CMOS LC oscillator with a ring structure,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2000, pp. 430–431.
[3.4] R. Adler, “A study of locking phenomena in oscillators,” Proc. IEEE, vol. 61, pp.1380–1385, Oct. 1973.
[3.5] C.-C. Lin and C.-K. Wang, “A regenerative semi-dynamic frequency divider for mode-1 MB-OFDM UWB hopping carrier generation,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2005, pp. 206–207.
[3.6] Jri Lee, “A 3-to-8-GHz Fast Hopping Frequency Synthesizer in 0.18-um CMOS Technology,” IEEE Journal of Solid-State Circuits, vol. 41, pp. 566-573, Mar. 2006
[3.7] B. Razavi, “A study of injection locking and pulling in oscillators,” IEEE Journal of Solid-State Circuits, vol. 39, no. 9, pp. 1415-1424, Sep. 2004.
[3.8] H. R. Rategh and T. H. Lee, “Superharmonic injection-locked frequency dividers,”IEEE Journal of Solid-State Circuits, vol. 34, pp. 813–821, June 1999.
[3.9] L. J. Paciorek, “Injection locking of oscillators,” Proc. IEEE, vol. 53,pp.1723–1727, Nov. 1965.
[4.1] Behzad Razavi,"A 60-GHz CMOS Receiver Front-End," IEEE J. Solid-State Circuits, vol. 41, no. 1, pp.17–22, Jan. 2006.
[4.2] T. Melly et al. ,"A 1.2V, 433MHz, 10dBm, 38% Global Efficiency FSK Transmitter Integrated in a Standard Digital CMOS Process," Proc. IEEE Custom Integrated Circuits Conf. (CICC), pp. 179-182, May 2000.
[4.3] Michael H. Perrott et al. ,“A 27-mW CMOS Fractional-N Synthesizer Using Digital Compensation for 2.5-Mb/s GFSK Modulation,” IEEE J. Solid-State Circuits,vol. 32, no. 12, December 1997.
[4.4] S. Heinen et al ,“A 3.0 V 2 GHz transmitter IC for digital radio communication with integrated VCO’s,” in Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC), Feb. 1995, pp. 150–151.
[4.5] S. Heinen et al. ,“A 2.7 V 2.5 GHz bipolar chipset for digital wireless communication,” in Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC), Feb. 1997, pp. 306–307.
[4.6] Behzad Razavi, RF Microelectronics, Prentice Hall, p.280, 1998.
[4.7] W. F. Egan, Frequency Synthesis by Phase Lock, New York: John Wiley, 1981.
[4.8] J. Gibbs and R. Temple, “Frequency Domain Yields Its Data to Phase-Locked Synthesizer,” Electronics, pp. 107-113, April 27, 1978.
[4.9] Jri Lee, "A 3-to-8-GHz Fast Hopping Frequency Synthesizer in 0.18-μm CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 41, pp. 566-573, March 2006.
[5.1] Behzad Razavi,"A 60-GHz CMOS Receiver Front-End," IEEE J. Solid-State Circuits, vol. 41, no. 1, pp.17–22, Jan. 2006.
[5.2] V. Thomas, J. Fenk, and S. Beyer, "A one-chip 2GHz single superhet receiver for 2Mb/s FSK radio communication," in IEEE ISSCC Dig. Technical Papers, 1994, pp.42-43.
[5.3] R. Adler, “A study of locking phenomena in oscillators,” Proc. IEEE, vol. 61, pp.1380–1385, Oct. 1973.
[5.4] B. Razavi, “A study of injection locking and pulling in oscillators,” IEEE Journal of Solid-State Circuits, vol. 39, no. 9, pp. 1415-1424, Sep. 2004.
[5.5] B. Razavi, Design of Integrated Circuits for Optical Communications, 1st Ed.,McGraw-Hill, 2003.
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