臺灣博碩士論文加值系統

為了實現塑膠基板薄膜電晶體的目標，我們成功地利用反應式濺鍍的方式來沉積對351nm波長具備0~56000cm-1吸收係數之SixNy半透光膜，並配合熱滯留輔助結晶技術，在塑膠基板上開發出超低溫多晶矽薄膜。此方式藉由調整沉積中Ar與N2的流量，可任意控制半透光膜之吸收係數。經過半透光膜吸收係數、SiO2膜厚最佳化之後，以此膜做為90nm矽膜之熱滯留輔助層，成功地在塑膠基板上增大晶粒粒徑達5um。

In order to realize the purpose of plastic substrate thin film transistor , We have successfully deposited semitransparent film that the main composition of the film is silicon nitride by using reactive sputtered method. And, it has light absorption (absorption coefficient from 0 to 56000 cm-1) that can be applied as heat retaining layer to get Low Temperature poly-Si on plastic substrates after excimer laser annealing. By adjusting the flow rate of Ar and N2, we can control the absorption coefficient of the semitransparent film at will.After get the optimum condition of the semitransparent and using this film as heat retaining layer for the 90nm thick silicon, we use excimer laser and have successfully obtained poly-Si on plastic substrates. It’s grain size can reache to 5um.

第一章 前言
1-1 前言.…………………………………………………… [1]
1-2 基板變形…….………….………….………….………. [2]
1-3 準分子退火原理………….…………….………...…… [4]
1-4 準分子雷射結晶技術介紹……………………………. [7]
1-5 研究背景…….………….………….………….………. [9]
1-6 論文大綱………………………………………………. [10]
第二章 反應式濺鍍之半透光膜開發
2-1 前言……………………………………………………. [12]
2-2 研究方法………………………………………………. [13]
2-3 實驗步驟………………………………………………. [14]
2-4實驗結果與討論……………………………………...... [17]
2-5本章結論……………………………………………….. [22]
第三章 塑膠基板上成膜技術開發
3-1 前言……………………………………………………[23]
3-2 研究方法與結果………………………………………[24]
3-2.1 反應式濺鍍薄膜直接運用於塑膠基板………[24]
3-2.2低功率的半透光膜開發及最佳化…………….[27]
3-2.3 低功率最佳化半透光膜成膜於塑膠基板……[30]
3-3 本章結論………………………………………………[42]
第四章 結論…………………………………………………….[43]
參考文獻………………………………………………………..[46]

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