臺灣博碩士論文加值系統

本研究探討準分子雷射結晶化矽厚膜可行性，並以此膜製作薄膜太陽能電池。研究發現，雷射退火矽膜之最高厚度為700 nm，並出現完全溶化之碟狀結晶(Disc grain)。利用SLS法後可再室溫下產生7 μm之橫向長晶長度，以此技術製作P＋ P N二極體，n值為3.37，ON/OFF=20。

In this research,we discuss the Excimer Laser Crystallization of thick Si films, and we manufacture the Poly-Si Thin-Film Solar Cells by this film. In the research, we can find the crystallization by Excimer laser
of 700nm Si film.And the complete melting characteristic is Disc grain.
We can produce lateral growth length about 7um by SLS.Finally we use this film to manufacture P+ P N diode. n =3.37 , ON/OFF=20.

第一章 序論
1-1 前言……………….……………………………… ﹝1﹞
1-2 準分子雷射退火原理…………………………….火………….……………………………… ﹝4﹞
1-3 連續性橫向長晶( Sequential Lateral growth)…… Solidfication, SLS)………………….. ﹝7﹞
1-4 研究背景………….……………………………… ﹝8﹞
1-5 論文流程………….……………………………… ﹝9﹞
第二章 矽厚膜結晶技術
2-1 前言……………….……………………………… ﹝10﹞
2-2 實驗方法………….……………………………… ﹝11﹞
2-2.1 基板清洗…………………………………………. ﹝11﹞
2-2.2 結構沉積....................…...……………………….. ﹝12﹞


2-2.3 準分子雷射退火..................................................... ﹝14﹞

2-3 實驗結果................................................................. ﹝14﹞

2-3.1 SLG Disc-Grain結晶技術...................................... ﹝14﹞

2-3.2 Porous結構結晶技術.............................................. ﹝17﹞

2-3.3 SLG橫向長晶技術................................................. ﹝22﹞

2-4 本章結論................................................................. ﹝28﹞

第三章 多晶矽薄膜太陽能電池元件製作…………………... ﹝29﹞

3-1 前言……………….……………………………… ﹝29﹞
3-2 實驗方法………….……………………………… ﹝30﹞
3-2.1 太陽能電池正面照光結構製作.............................
…...…………………………………….. ﹝30﹞
3-2.2 太陽能電池背面照光結構製作…………………. ﹝34﹞
3-3 本章結論………….……………………………… ﹝39﹞
第四章 多晶矽薄膜太陽能電池元件製作之二........... ﹝40﹞
4-1 實驗方法…………………………………………. ﹝40﹞
4-2 實驗結果…….…………………………………… ﹝42﹞
4-2.1 P-type Si層高溫爐結構製作……………………. ﹝42﹞
4-2.2 P-type Si層雷射退火結構製作…………………. ﹝44﹞
4-3.3 N P P+ 三層雷射退火結構製作............................射……….………………………… ﹝49﹞
4-4 本章結論…….…………………………………… ﹝55﹞
第五章 結論………………………………………………….. ﹝56﹞
參考文獻………………………………………………………. ﹝57﹞

[1] 吉田 隆 , ”薄膜太陽能電池的開發最前線” 2005, S. T. S. ,Japan.
[2] W. YEH, H. Huang, I NIU, and C. Chen, “Light-absorptive under-enhanced superlateral growth in Excimer Laser crystallization of amorphous silicon Film”, Jpn. J. Appl. Phys. Vol. 46, pp. 1466-1468.
[3] M. A. crowder, P. G. Carey, P. M. Smith, R. S. Sposili, H. S. Cho, and J. S. IM, “Low-temperature singal-crystal Si TFT’s fabricated on Si films processed via sequential lateral solidification” ,IEEE Electron Device Letters, Vol.19, No. 8, pp306-309 (1998).
[4] W. YEN, C. ZHUANG, and D. KE, “Growth rate measurement of lateral grains in silicon film during Excimer Laser annealing”.Vol 46, No. 25,2007, pp. L611~L613.
[5] M. A. Crowder, M. Moriguchi, Y. Mitani, A. T. Voutsas ,” Parametric investigation of SLS-process poly-silicon thin films for TFT applications”, Thin Solid Films,Vol. 427, 2003 , pp. 101-107.
[6] J. H. Jeon, M. C. Lee, K. C. Park, and M. K. Han , “A new polycrystalline silicon TFT with a single grain boundary in the channel” IEEE electron devices letters, Vol.22 , No.9, pp. 429-432 (2001).
[7] D. Hwang, K. H-S, J Lim, and J. Oh , “Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering”, Appl. Phys. Lett., Vol 86, 151917 (2005).


[8] Elvira M. C. Fortunato, Pedro M. C. Barquinha ,and L Pereira, “Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature”, Appl. Phys. Lett., Vol 85 , pp. 2541~2543.
[9] T. Makino , Y. Segawa ,and M. Kawasaki et , “Electron on transport in ZnO thin Films”, Appl. Phys. Lett., Vol 87, 022101 (2005).
[10] C. H. Kim, S. H. Jung, J. H. Jeon, and M. K. Han, “A simple low-temperature laser-dopind employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors”, Thin Solid Films, Vol.397, pp.4-7 ( 2007).
[11] Xiao, Hong. , “Introduction to Semiconductor Manufacturing Technology”, 2001 , Prentice-Hall Inc.
[12] K. Kitahara, H. Nogi, and A. Moritani , “Hydrogenation of lascer-crystallized poly-silicon thin films and characterization ofdefects using a catalytic method”, Thin Solid Films, Vol.395, pp.92-96(2001).