臺灣博碩士論文加值系統

本篇論文研究將針對在p型氮化鎵(p-GaN)材料上進行銀與銀/氧化鋅摻雜氧化銦(ZIO)之高反射率歐姆接觸電極，並應用於發光二極體元件。銀反射電極在大氣環境下，經過300 ℃退火10分鐘，特徵電阻值約為 5×10-3 Ωcm2 。將銀反射電極應用於發光二極體上，起始電壓為3.55 V(@20 mA)。銀/氧化鋅摻雜氧化銦(ZIO)之反射電極在大氣環境下，經過500 ℃退火10分鐘，特徵電阻值約為1.74×10-4 Ωcm2 。當其應用於發光二極體上，在室溫環境，起始電流20 mA之下，量測其起始電壓為3.15 V，而光輸出功率與功率效率分別為7.86 mW與12.44 %。證實了使用氧化鋅摻雜氧化銦(ZIO)當披覆層，有效提升了其熱穩定性，搭配銀反射電極成為高反射率歐姆接觸電極，提升了發光二極體效能。本研究採用化學分析電子儀來探討其歐姆接觸的機制。

Ag and Ag/ZIO schemes for the formation of low resistance and highly reflective ohmic contacts to p-GaN for flip-chip light emitting diodes were investigated.The Ag contacts show good ohmic characteristics with contact resistivity of 5×10-3 Ωcm2 when annealed at 300 ℃ for 10 min in vacuum. LEDs fabricated using the Ag contacts layers give forwardbias voltages of 3.55V at 20 mA.The Ag/ZIO contacts show better ohmic characteristics with contact resistivity of 1.74×10-4 Ωcm2 when annealed at 500 ℃ for 10 min in vacuum. LEDs fabricated using the Ag/ZIO contacts layers give forwardbias voltages of 3.15 V at 20 mA.A light output power and an Power efficiency of the LED with Ag/ZIO contact of 7.86 mW and 12.44 %, resoectuvely, are measured at a forward current of 20 mA at room temperature. It is clearly shown that a transparent contact overlayer is necessary to make high-quality ohmic contacts to p-type GaN for thermally stable flip-chip LEDs using Ag reflectors.Based on electron spectroscopy for chemical analysis (ESCA), possible ohmic formation mechanisms are discussed.

中文摘要 i
英文摘要 ii
誌 謝 iii
目 錄 iv
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1 研究動機 1
1.2 研究方法與論文架構 3
第二章 理論基礎與文獻回顧 4
2.1氧化鋅摻雜氧化銦(In2O3 :ZnO)之基本特性 4
2.2濺鍍(Sputter)系統原理 6
2.2.1電漿原理 6
2.2.2反應式磁控濺鍍法(Reactive Sputtering) 8
2.2.3直流式濺鍍法(Direct Current Sputtering) 9
2.2.4射頻濺鍍法(Radio Frequency Sputtering) 9
2.2.5磁控濺鍍法(Magnetron sputtering) 10
2.3歐姆接觸特性理論 11
2.4傳輸線模型理論(TLM,Transmission Line Model) 13
2.5量測分析方法 14
2.5.1 膜厚量測 14
2.5.2 穿透反射光譜量測分析 14
2.5.3 霍爾效應量測(Hall Effect Measurement) 16
2.5.4 掃描式電子顯微鏡(SEM)分析 17
2.5.5 化學分析電子儀(ESCA) 18
第三章 實驗方法 19
3.1 實驗流程 19
3.2 ZIO薄膜沉積 19
3.3 RTLM製程步驟 21
3.4反射式LED元件製作 22
3.4.1 去酯處理 23
3.4.2 去除表面氧化層處理 23
3.4.3 製作MESA結構 23
3.4.4 歐姆接觸反射式電極製程 24
3.4.5蒸鍍Ti/Al/Ti/Au接觸電極 24

第四章 實驗結果與討論 26
4.1 反射式電極 26
4.2 Ag 反射電極之光電特性 27
4.2.1電特性 27
4.2.2光特性 27
4.3 Ag/ZIO 反射電極之光電特性 28
4.3.1電特性 28
4.3.2光特性 29
4.4 熱穩定性 29
4.5 ESCA分析 30
4.6氮化鎵LED光電特性分析 31
4.6.1電特性影響 31
4.6.2光特性影響 32
第五章 結論 33
參考文獻 35

[1] Robert F.Davis,proceedings of the IEEE, vol.79, No.5, pp.702-712, (1991)
[2] S.N.Mohammad, Arnel A.Salvador, and Hadis Morkoc, proceedings of the IEEE, vol.83, No.10, pp.1306-1355,(1995)
[3] S.Nakamura, M,Senoh, S.Nagahama, N.Iwasa, and T.Matsushita, et al.,Appl.Phys.Lett.,Vol.72,pp.211.(1998)
[4] Pleun Maaskant, Mahbub Akhter, John Lambkin, and Laurence Considine, IEEE Trans. Electron Devices, Vol.48,No.8,pp.1822-1825,(2001)
[5] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C.Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern, and S. A. Stockman, Appl. Phys.Lett. 78, 3379 (2001).
[6] D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, and H. Liu, Appl. Phys. Lett. 83,311 (2003).
[7] June-O Song,Joon Seop Kwak,Yongjo Park,Tae-Yeon Seong,Appl. Phys. Lett.86, 062104 (2005)
[8] Dong-Seok Leem, June-O Song, Hyun-Gi Hong, J. S. Kwak, Y. Park,and Tae-Yeon Seong, Electrochemical and Solid-State Letters, 7 (10) G219-G221 (2004)
[9] 陳學龍,IZO透明金屬薄膜之研製及其在GaN基LEDs之應用研究,國立成功大微電子工程研究所,碩士論文
第二章：
[10] Elias Burstein，, Anomalous Optical Absorption Limit in InSb, Phys. Rev. 93, 632–633 (1954)
[11] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice-Hall, Inc., (2000)
[12] K. Jagannadham, A. K. Sharma, Q. Wei, R. Kalyanraman and J.Narayan, J. Vac. Sci. Technol. A, 16(5), (1998) 2804
[13] 翁睿哲，以射頻磁控濺鍍氮化鉭薄膜製程條件對顯微結構及電性影響研究，國立成功大學材料科學與工程學系，碩士論文。(2001)
[14] John L. Vossen and Werner Kern, Thin Film Processes II, (1991)
[15] J. K. Ho, C. S. Jong, C. C Chiu, C. N. Huang, C. Y. Chen, K. K. Shih, Appl. Phys. Lett. 74, 1275 (1999).
[16] L. C. Chen, C. Y. Hsu, W. H. Lan, S. Y. Teng, Solid-State Electron. 47 1843 (2003)
[17] R. H. Horng, D. S. Wuu, Y. C. Lien, W. H. Lan, Appl. Phys. Lett. 79, 2925 (2001).
[18] Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, H. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen, B. R. Huang, IEEE Photonics Technol. Lett. 14, 1668 (2002).
[19] J. O. Song, K. K. Kim, S. J. Park, T. Y. Seong, Appl. Phys. Lett. 83, 479 (2003).
[20] Dieter K. Schroder,Semiconductor Material and Device Characterization, 2nd ed
(Wiley, New York, 1998).
[21] L. J. Van der Pauw, Philips Technical Review, 20, 220-224 (1958)
[22] 汪建民，材料分析，中國材料科學學會 (1998)。
[23] Motlan, E.M.Goldys, T.L.Tansley, J.Crystal Growth, 241, 165(2002)
[24] Motlan, E. M. Goldys, T. L. Tansley, J. Crystal Growth, 241, 165 (2002)
第三章：
[25]Jingxi Sun, K.A. Rickert, J.M. Redwing, A.B. Ellis, F. J. Himpsel, T. F. Kuech Appl.Phys.Lett. 76,415(2000)
[26] Ja-Soon Jang, Seong-Ju Park, and Tae-Yeon Seonga J. Vac. Sci. Technol. B17.6.(1999)

第四章：
[27] American Society for Metals, Metals handbook 8th ed. V.1, Metals Park, Ohio, pp. 1197-1230 (1976)
[28] V. M. Bermudez, D. D. Koleske, and A. E. Wickenden, Appl. Surf. Sci. 126, 69 (1998).
[29] J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, and T. F. Kuech, Appl. Phys. Lett. 76, 415 (2000).
[30] J.-O. Song, D.-S. Leem, and T.-Y Seong, Appl. Phys. Lett. 83, 3513 (2003).
[31] June-O Song, Joon Seop Kwak, Tae-Yeon Seong, Appl. Phys. Lett.86, 062103 (2005)
[32] ong-Seok Leem, June-O Song, Hyun-Gi Hong, J. S. Kwak, Y. Park,and Tae-Yeon Seongc,Electrochemical and Solid-State Letters, 7 (10) G219-G221 (2004)
[33] Yoon Tae Hwang, Hyun-Gi Hong, Tae-Yeon Seonga, D.-S. Leem, T. Lee, K.-K. Kim, J.-O. Song,Materials Science in Semiconductor Processing 10 (2007) 14–18
[34] C. H. Chou, C. L. Lin, and Y. C. Chuang,H. Y. Bor,C. Y. Liua Appl. Phys. Lett. 90, 022103 (2007)
[35] Ho Won Jang, Jun Ho Son, and Jong-Lam Lee Appl. Phys. Lett. 90, 012106 (2007)
[36] Jae-Hong Lim, Dae-Kue Hwang, Hyun-Sik Kim, Jin-Yong Oh, Jin-Ho Yang,R. Navamathavan, and Seong-Ju Park, Appl.Phys.Lett,85, 6191, (2004)
[37] Y. Bu, L. Ma, and M. C. Lin, J. Vac. Sci. Technol. A 11, 2931 (1993).
[38] F. Zhu, C. H. A. Huan, K. Zhang, and A. T. S. Wee, Thin Solid Films 359, 244 (2000).
[39] T. Gessmann, J. W. Graff, Y. L. Li, E. L. Waldron, and E. F. Schubert, J.Appl. Phys. 92, 3740 (2002).
[40] K. Kumakura, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. 79,2588 (2001)
[41] K. M. Chang, J. Y. Chu, and C. C. Cheng, Solid-State Electron., 49, 1381 (2005)
[42] Lung-Chien Chen, Chih-Ming Chen, Chie-Sheng Liu, and Lu-Sheng Hong, J. Electrochem. Soc., Volume 153, Issue 11, pp. G931-G933 (2006)
[43] Ho Won Jang, Jun Ho Son, and Jong-Lam Lee, 9 Appl.Phys.Lett,0, 012106 (2007)